HMC315_10

HMC315 / 315E v02.0605 8 AMPLIFIERS - SMT Typical Applications The HMC315 / HMC315E is ideal for: • Fiber Optic OC-48 Systems • Microwave Test Instrumentation • Broadband Mobile Radio Platforms Functional Diagram ED U IN NT T O SC DUC DI RO P Features Saturated Output Power: +17 dBm Output IP3: +33 dBm Gain: 15 dB Single Supply: +5V to +7V Ultra Small Package: SOT26 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz w r Ne Generalo f Description ded & HMC315E are ultra broadband GaAs The men HMC315 InGaP Heterojunction Bipolar Transistor (HBT) MMIC om amplifiers that operate from a single positive supply. Rec The surface mount SOT26 amplifier can be used as a Not broadband gain stage, or used with external matching for optimized narrow band applications. The Darlington configuration results in reduced sensitivity to normal process variations and provides a good 50ohm input/output port match. The amplifier provides 15 dB of gain and +17 dBm of saturated power while operating from a single positive +7V supply. s sign De Electrical Specifications, TA = +25° C, As a Function of Vcc Vcc = +5V Parameter Min. Frequency Range Gain Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1.0 GHz Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (OIP3) @ 1.0 GHz Noise Figure Supply Current (Icc) 7 3 18 8 10 23 11 Typ. DC - 7 14 0.015 10 7 21 11 13 26 6.5 30 17 0.025 7 3 18 13 15 30 11 Max. Min. Typ. DC - 7 15 0.015 10 7 21 16 17.5 33 6.5 50 18 0.025 Max. GHz dB dB/°C dB dB dB dBm dBm dBm dB mA Vcc = +7V Units 8-1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC315 / 315E v02.0605 Gain & Return Loss @ Vcc= +7V 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 0 1 15 10 5 0 S11 S21 S22 -5 2 3 4 FREQUENCY (GHz) w r Ne o ed f d men om Rec Not -10 -15 -20 -25 5 6 7 8 0 1 2 3 20 18 16 14 GAIN (dB) 12 10 8 6 4 2 0 s sign De 4 5 6 S11 S21 S22 7 8 FREQUENCY (GHz) Gain vs. Temperature @ Vcc= +7V 20 18 16 14 GAIN (dB) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25C +60C -40C Gain vs. Temperature @ Vcc= +5V +25 C +60 C -40 C 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Input & Output Return Loss vs. Vcc Bias 0 Reverse Isolation vs. Vcc Bias 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 S12 Vcc=7V S12 Vcc=5V -5 RETURN LOSS (dB) -10 -15 S11 Vcc=7V S22 Vcc=7V S11 Vcc=5V S22 Vcc=5V -20 -25 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8-2 AMPLIFIERS - SMT ED U IN NT T O SC DUC DI RO P Gain & Return Loss @ Vcc= +5V 20 RESPONSE (dB) GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 8 HMC315 / 315E v02.0605 8 AMPLIFIERS - SMT P1dB vs. Temperature @ Vcc= +7V 20 18 16 14 P1dB (dBm) 12 10 8 6 4 2 0 0 1 ED U IN NT T O SC DUC DI RO P P1dB vs. Temperature @ Vcc= +5V 20 18 16 14 12 10 8 6 4 2 0 +25 C +60 C -40 C GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz P1dB (dBm) +25 C +60 C -40 C 2 3 4 5 FREQUENCY (GHz) w r Ne o ed f d men om Rec Not 6 7 8 0 1 2 3 20 18 16 14 Psat (dBm) 12 10 8 6 4 2 0 s sign De 4 5 6 7 8 FREQUENCY (GHz) Psat vs. Temperature @ Vcc= +7V 20 18 16 14 Psat (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25 C +60 C -40 C Psat vs. Temperature @ Vcc= +5V +25C +60C -40C 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Output IP3 vs. Temperature @ Vcc= +7V 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 0 1 2 3 Output IP3 vs. Temperature @ Vcc= +5V 30 28 26 24 IP3 (dBm) 22 20 18 16 +25 C +60 C -40 C IP3 (dBm) +25 C +60 C -40 C 14 12 10 5 6 7 8 0 1 2 3 4 5 6 7 8 4 FREQUENCY (GHz) FREQUENCY (GHz) 8-3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC315 / 315E v02.0605 Power Compression @ 1.0 GHz, Vcc= +7V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) -6 -4 INPUT POWER (dBm) w r Ne o ed f d men om Rec Not Pout (dBm) Gain (dB) PAE (%) s sign De Pout (dBm) Gain (dB) PAE (%) -2 0 2 4 6 8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) Power Compression @ 3.0 GHz, Vcc= +7V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 3.0 GHz, Vcc= +5V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 Pout (dBm), GAIN (dB), PAE (%) Pout Gain (dB) PAE (%) Pout (dBm) Gain (dB) PAE (%) -6 -4 -2 0 2 4 6 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8-4 AMPLIFIERS - SMT ED U IN NT T O SC DUC DI RO P Power Compression @ 1.0 GHz, Vcc= +5V Pout (dBm), GAIN (dB), PAE (%) 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 8 HMC315 / 315E v02.0605 8 AMPLIFIERS - SMT Application Circuit ED U IN NT T O SC DUC DI RO P Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +7.0 Vdc) Junction Temperature +7.5 Vdc +11 dBm 150 °C Continuous Pdiss (T = 60 °C) (derate 4.14 mW/°C above 60 °C) Thermal Resistance (junction to lead) GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz w r Ne o ed f d men om Rec Not Storage Temperature Operating Temperature ESD Sensitivity (HBM) s sign De Class 1A 0.373 W 242 °C/W -65 to +150 °C -40 to +60 °C Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1. 2. External Blocking Capacitors are required on Pins 1 & 3. Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number HMC315 HMC315E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H315 XXXX 315E XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 8-5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC315 / 315E v02.0605 Evaluation PCB w r Ne o ed f d men om Rec Not s sign De List of Materials for Evaluation PCB 104217 [1] Item J1, J2 U1 PCB [2] Description PCB Mount SMA Connector HMC315 / HMC315E Amplifier Evaluation PCB 1.5” x 1.5” [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8-6 AMPLIFIERS - SMT ED U IN NT T O SC DUC DI RO P GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 8