HMC320MS8G / 320MS8GE
v03.0308
GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC320MS8G(E) is ideal for: • UNII • HiperLAN
Features
Selectable Functionality: LNA, Driver, or LO Buffer Amp Adjustable Input IP3 Up to +10 dBm +3V Operation Ultra Small 8 Lead MSOP: 14.8 x 14.8 x 1 mm
Functional Diagram
General Description
The HMC320MS8G & HMC320MS8GE are low cost C-band fixed gain Low Noise Amplifiers (LNA). The HMC320MS8G & HMC320MS8GE operate using a single positive supply that can be set between +3V and +5V. With +3V bias, the LNA provides a noise figure of 2.5 dB, 1 dB gain and better than 10 dB return loss across the UNII band. The HMC320MS8G & HMC320MS8GE also feature an adaptive baising that allows the user to select the optimal P1dB performance for their system using an external set resistor on the “RES” pin. P1dB performance can be set between a range of +1 dBm to +13 dBm. The low cost LNA uses an 8-leaded MSOP ground base surface mount plastic package, which occupies less than 14.8 mm2.
Electrical Specifi cations, TA = +25° C, Vdd = +3V
Parameter Low Power* (VSET = 0V, Idd = 7 mA) Min. Frequency Range Gain Gain Variation over Temperature Gain Flatness Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Input Third Order Intercept Point (IIP3) Supply Current (Idd) 4 7 -4 -3 8 Typ. 5-6 10 0.025 ±0.5 2.7 10 13 -1 1 7 3.8 4 10 6 4 16 0.035 8 Max. Medium Power* (VSET = 3V, Idd = 25 mA) Min. Typ. 5-6 12 0.025 ±1.0 2.5 10 18 9 8 25 3.8 4 10 9 6 16 0.035 9 Max. High Power* (VSET = 3V, Idd = 40 mA) Min. Typ. 5-6 13 0.025 ±1.5 2.6 10 20 12 10 40 3.8 16 0.035 Max. GHz dB dB/°C dB dB dB dB dBm dBm mA Units
* RBIAS resistor value sets current. See adaptive biasing application note.
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F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC320MS8G / 320MS8GE
v03.0308
GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz
Broadband Gain & Return Loss Medium Power Bias
15 10 5 RESPONSE (dB) 0 -5 -10 -15 -20 -25 -30 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz)
S11 S21 S22
Gain @ Three Bias Conditions
16 14 12 GAIN (dB) 10 8 6 4 2 0 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz)
Low Power Bias Medium Power Bias High Power Bias
8
LOW NOISE AMPLIFIERS - SMT
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Gain vs. Temperature Medium Power Bias
16 14
Input Return Loss @ Three Bias Conditions
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30
Low Power Bias Medium Power Bias High Power Bias
12 GAIN (dB) 10 8 6 4 2 0 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz)
+25 C +85 C -40 C
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
Noise Figure vs. Temperature Medium Power Bias
5
Output Return Loss @ Three Bias Conditions
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30
Low Power Bias Medium Power Bias High Power Bias
4 NOISE FIGURE (dB)
3
2
+25 C +85 C -40 C
1
0 4.5
5
5.5 FREQUENCY (GHz)
6
6.5
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC320MS8G / 320MS8GE
v03.0308
GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz
8
LOW NOISE AMPLIFIERS - SMT
Noise Figure @ Three Bias Conditions
5
Input IP3 @ Three Bias Conditions
15
4 NOISE FIGURE (dB) 10 3 IP3 (dBm)
5
2
Low Power Bias Medium Power Bias High Power Bias
Low Power Bias Medium Power Bias High Power Bias
0
1
0 4.5
5
5.5 FREQUENCY (GHz)
6
6.5
-5 4.5
5
5.5 FREQUENCY (GHz)
6
6.5
Output 1dB Compression @ Three Bias Conditions
15 13 11 9 P1dB (dBm) 7 5 3 1 -1 -3 -5 4.5
Low Power Bias Medium Power Bias High Power Bias
Reverse Isolation @ Three Bias Conditions
0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60
Low Power Bias Medium Power Bias High Power Bias
5
5.5 FREQUENCY (GHz)
6
6.5
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
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F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC320MS8G / 320MS8GE
v03.0308
GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz
Adaptive Biasing
Optimizing P1dB Performance
The bias level may be changed to adjust the P1dB and return loss performance. The table below contains the HMC320MS8G RF performance as a function of various VSET and RBIAS settings. It will be necessary for the VSET voltage source to provide 100uA of current to the amplifier. The Idd and Vdd quiescent performance will not change as a function of changing the VSET voltage.
8
LOW NOISE AMPLIFIERS - SMT
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RF Performance at 5.8 GHz (Vdd = +3V)
VSET (VDC) 0 3 3 3 RBIAS Resistor Between Pin 3 and GND (Ohms) 174 22 7 GND (No Resistor) Idd (mA) 7 25 40 60 Output P1dB (dBm) 1.0 9.0 13.0 14.0 Output Return Loss (dB) 16.0 12.0 15.0 15.0
Applying the adaptive biasing
A dynamically controlled bias can be implemented with this design. A typical application wil include sensing an RF signal level and then adjusting the VSET. The bias adjustment can be accomplished by either analog or digitals means, after the RF signal has been detected and translated to a DC voltage using external power detection circuitry.
Schematic
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC320MS8G / 320MS8GE
v03.0308
GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz
8
LOW NOISE AMPLIFIERS - SMT
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) Control Voltage Range (VSET) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 2.98 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +7.0 Vdc 0 to Vdd +5 dBm 150 °C 0.194 W 336 °C/W -65 to +150 °C -40 to +85 °C Class 1A
Truth Table
VSET 0V 3V 3V Operating Current Idd 7 mA 25 mA 40 mA Operating State Low Power Medium Power High Power Resistor Rbias 174 Ohm 22 Ohm 7 Ohm
Set external bias resistor (RBIAS) to achieve desired operating current, 0 < RBIAS < 200 Ohm.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number HMC320MS8G HMC320MS8GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1
[1]
Package Marking [3] H320 XXXX H320 XXXX
[2]
[1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX
8 - 24
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC320MS8G / 320MS8GE
v03.0308
GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz
Evaluation PCB
8
LOW NOISE AMPLIFIERS - SMT
List of Materials for Evaluation PCB 103907 [1]
Item J1, J2 J3, J4, J5 R1 U1 PCB [2] Description PCB Mount SMA Connector DC Pins 22 Ohm Resistor, 0603 Pkg. HMC320MS8G / HMC320MS8GE Amplifier 103905 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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