HMC331_09

HMC331 v04.1007 GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT Typical Applications Features Conversion Loss: 14 dB Fo, 3Fo, 4Fo Isolation: 50 dB Passive: No Bias Required Die Size: 0.85 x 0.55 x 0.1 mm 2 FREQUENCY MULTIPLIERS - PASSIVE - CHIP The HMC331 is suitable for: • Wireless Local Loop • LMDS, VSAT, and Point-to-Point Radios • Test Equipment Functional Diagram General Description The HMC331 is a passive miniature frequency doubler MMIC. Suppression of undesired fundamental and higher order harmonics is 50 dB typical with respect to input signal level. The doubler utilizes the same GaAs Schottky diode/balun technology found in Hittite MMIC mixers. It features small size, requires no DC bias, and adds no measurable additive phase noise onto the multiplied signal. Electrical Specifi cations, TA = +25° C, As a Function of Drive Level Input = +11 dBm Parameter Frequency Range, Input Frequency Range, Output Conversion Loss FO Isolation (with respect to input level) 3FO Isolation (with respect to input level) 4FO Isolation (with respect to input level) 45 50 50 Min. Typ. 13 - 18 26 - 36 15 50 60 60 20 45 45 50 Max. Min. Input = +13 dBm Typ. 12 - 18 24 - 36 14 50 60 60 20 45 47 50 Max. Min. Input = +15 dBm Typ. 12 - 18 24 - 36 14 50 60 60 19 Max. Units GHz GHz dB dB dB dB 2 - 22 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC331 v04.1007 GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT Conversion Loss vs. Temperature @ +15 dBm Drive Level 0 + 25 C + 85 C -55 C Conversion Loss @ 25 C Vs. Drive Level 0 -5 -10 -15 -20 -25 -30 2 FREQUENCY MULTIPLIERS - PASSIVE - CHIP 2 - 23 + 15 dBm + 13 dBm + 11 dBm CONVERSION GAIN (dB) -5 -10 -15 -20 -25 12 13 14 15 16 17 18 INPUT FREQUENCY (GHz) CONVERSION GAIN (dB) 12 13 14 15 16 17 18 FREQUENCY (GHz) Isolation @ +15 dBm Drive Level* 0 Fo 3Fo 4Fo Input Return Loss vs. Drive Level 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 + 15 dBm + 13 dBm + 11 dBm -20 ISOLATION (dB) -40 -60 -80 -100 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) 12 13 14 15 16 17 18 FREQUENCY (GHz) *With respect to input level Output Return Loss For Three Input Frequencies 0 13 GHz In 15 GHz In 18 GHz In Absolute Maximum Ratings Input Drive Storage Temperature Operating Temperature +27 dBm -65 to +150 °C -55 to +85 °C RETURN LOSS (dB0 -6 -12 -18 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS -24 -30 22 24 26 28 30 32 34 36 OUTPUT FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC331 v04.1007 GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT Outline Drawing 2 FREQUENCY MULTIPLIERS - PASSIVE - CHIP Die Packaging Information [1] Standard GP-5 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Pad Description Pad Number Function Description Interface Schematic 1 RFIN DC coupled and matched to 50 Ohm. 2 RFOUT DC coupled and matched to 50 Ohm. Die Bottom GND Die bottom must be connected to RF/DC ground. 2 - 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC331 v04.1007 GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrate should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075mm ( 3 mil) width and minimal length