HMC333

HMC333

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC333 - GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 3.0 - 3.8 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC333 数据手册
HMC333 / 333E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 3.0 - 3.8 GHz Typical Applications The HMC333 / HMC333E is ideal for: • Wireless Local Loop Features Integrated LO Amplifier w/ Pdiss: < 25 mW Conversion Loss / Noise Figure: 8.5 dB Low LO Drive Level: 0 dBm Input IP3: +10 dBm 9 MIXERS - SGL-BAL - SMT Functional Diagram Single Positive Supply: 3V to 5V General Description The HMC333 & HMC333E are single balanced mixer ICs with integrated LO amplifiers. This converter IC can operate as an upconverter or downconverter between 3.0 GHz and 3.8 GHz. With the integrated LO amplifier, the mixer requires an LO drive level of only 0 dBm, and requires only 7 mA from a single positive +3V rail. The mixer has 8.5 dB of conversion loss, an input P1dB of 0 dBm and an input third order intercept point of +10 dBm at 3.5 GHz. Electrical Specifi cations, TA = +25° C Parameter Min. Frequency Range, RF & LO Frequency Range, IF Conversion Loss Noise Figure (SSB) LO to RF Isolation LO to IF Isolation RF to IF Isolation IP3 (Input) 1 dB Compression (Input) Supply Current (Idd) * Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz. 10 5 10 3 -3 IF = 100 MHz LO = 0 dBm & Vdd = +3V Typ. 3.0 - 3.8 DC - 1.0 8.5 8.5 15 10 15 10 +1 7 11 11 Max. GHz GHz dB dB dB dB dB dBm dBm mA Units 9 - 194 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC333 / 333E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 3.0 - 3.8 GHz Conversion Gain vs. Temperature @ LO = 0 dBm 0 Isolation @ LO = 0 dBm 0 CONVERSION GAIN (dB) -5 ISOLATION (dB) -5 RF/IF LO/RF LO/IF -10 -10 -15 +25 C -40 C +85 C -15 9 2.8 3.2 3.6 4 4.4 FREQUENCY (GHz) -20 2.4 2.8 3.2 3.6 4 4.4 -20 2.4 FREQUENCY (GHz) Conversion Gain vs. LO Drive 0 Return Loss @ LO = 0 dBm 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 RF LO CONVERSION GAIN (dB) -5 -6 dBm -4 dBm -2 dBm 0 dBm +2 dBm +4 dBm -10 -15 -20 2.4 -30 2.8 3.2 3.6 4 4.4 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Conversion Gain vs. Vdd @ LO = 0 dBm 0 IF Bandwidth @ LO = 0 dBm 0 CONVERSION GAIN (dB) -5 RESPONSE (dB) -5 -10 -10 -15 +2.7V +3.0V +3.3V -15 CONVERSION GAIN RETURN LOSS -20 2.4 -20 2.8 3.2 3.6 4 4.4 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 195 MIXERS - SGL-BAL - SMT HMC333 / 333E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 3.0 - 3.8 GHz Input P1dB vs. Temperature @ LO = 0 dBm 10 Upconverter Performance Conversion Gain @ LO = 0 dBm 0 CONVERSION GAIN (dB) 6 INPUT P1dB (dBm) -5 2 -10 9 MIXERS - SGL-BAL - SMT -2 +25 C -40 C +85 C -15 -6 -20 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) -10 2.9 3.1 3.3 3.5 3.7 3.9 FREQUENCY (GHz) Input IP3 vs. LO Drive* 20 Input IP3 vs. Temperature @ LO = 0 dBm* 20 15 IP3 (dBm) IP3 (dBm) 15 10 10 5 -2 dBm 0 dBm +2 dBm 5 +25 C -40 C +85 C 0 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) 0 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) Input IP3 vs. Vdd @ LO = 0 dBm* 20 Input P1dB vs. Vdd @ LO = 0 dBm 10 6 15 INPUT P1dB (dBm) IP3 (dBm) 2 10 -2 +2.7V +3.0V +3.3V 5 +2.7V +3.0V +3.3V -6 0 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) -10 2.9 3.1 3.3 3.5 3.7 3.9 FREQUENCY (GHz) * Two-tone input power= -10 dBm each tone, 1 MHz spacing. 9 - 196 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC333 / 333E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 3.0 - 3.8 GHz MxN Spurious @ IF Port nLO mRF 0 1 2 3 4 0 xx 8 33 68 77 1 -9 0 49 56 80 2 -5 32 40 68 79 3 12 25 40 48 80 4 34 34 43 72 71 Harmonics of LO nLO Spur @ RF Port LO Freq. (GHz) 3 3.17 3.34 3.51 3.68 3.85 1 12 13 17 15 14 14 2 8 8 10 14 17 18 3 16 20 22 26 25 22 4 49 39 42 48 42 43 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 197 MIXERS - SGL-BAL - SMT RF = 3.5 GHz @ -10 dBm LO = 3.4 GHz @ 0 dBm All values in dBc below IF power level. 9 LO = 0 dBm All values in dBc below input LO level @ RF port. HMC333 / 333E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 3.0 - 3.8 GHz Absolute Maximum Ratings RF / IF Input (Vdd = +3V) LO Drive (Vdd = +3V) Vdd Continuous Pdiss (Ta = 85 °C) (derate 2.64 mW/°C above 85 °C) +13 dBm +13 dBm 5.5V 238 mW ±3 mA -65 to +150 °C -40 to +85 °C 9 MIXERS - SGL-BAL - SMT IF DC Current Storage Temperature Operating Temperature ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC333 HMC333E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H333 XXXX 333E XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 9 - 198 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC333 / 333E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 3.0 - 3.8 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 Vdd Power supply for the LO Amplifier. Two external RF bypass capacitors (10 pF & 10,000 pF) and an external inductor (1.8 nH) are required. 2, 5 GND Ground: Pin must connect to RF ground. This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source/sink more than 3mA of current or die nonfunction and possible die failure will result. 9 MIXERS - SGL-BAL - SMT 9 - 199 3 IF 4 RF This pin is AC coupled and matched to 50 Ohm from 3.0 - 3.8 GHz. 6 LO This pin is AC coupled and matched to 50 Ohm from 3.0 - 3.8 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC333 / 333E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 3.0 - 3.8 GHz Application Circuit 9 MIXERS - SGL-BAL - SMT 9 - 200 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC333 / 333E v01.0705 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 3.0 - 3.8 GHz Evaluation PCB 9 MIXERS - SGL-BAL - SMT List of Materials for Evaluation PCB 105128 [1] Item J1 - J4 C1 C2 L1 U1 PCB [2] Description PCB Mount SMA RF Connector 10 pF Capacitor, 0603 Pkg. .01 μF Capacitor, 0603 Pkg. 1.8 nH Inductor, 0805 Pkg. HMC333 / HMC333E Mixer 103927 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 201
HMC333
1. 物料型号: - HMC333:Low Stress Injection Molded Plastic 封装,Sn/Pb Solder 焊料,MSL1等级,封装标记为H333 xXXX。 - HMC333E:RoHS-compliant Low Stress Injection Molded Plastic 封装,100% matte Sn 焊料,MSL1(2)等级,封装标记为333E XXXX。

2. 器件简介: - HMC333/333E是带有集成本振放大器的单平衡混频器IC,可以在3.0 GHz至3.8 GHz之间作为上变频器或下变频器工作。集成本振放大器使得混频器只需要0 dBm的本振驱动电平,并且只需要从单正+3V电源轨吸取7 mA电流。

3. 引脚分配: - 1号引脚:Vdd,LO放大器的电源供应。需要两个外部RF旁路电容器(10 pF和10,000 pF)和一个外部电感(1.8 nH)。 - 2、5号引脚:GND,地线,必须连接到RF地。 - 3号引脚:IF,这个引脚是直流耦合的。对于不需要操作到直流的应用,应该在外部使用串联电容器进行直流阻断。 - 4号引脚:RF,这个引脚是交流耦合的,并且在3.0-3.8 GHz范围内匹配到50欧姆。 - 6号引脚:LO,这个引脚是交流耦合的,并且在3.0-3.8 GHz范围内匹配到50欧姆。

4. 参数特性: - 工作频率范围:RF和LO为3.0-3.8 GHz,IF为直流至1.0 GHz。 - 转换损耗:8.5 dB(典型值)。 - 噪声系数(单边带):8.5 dB(典型值)。 - LO到RF隔离:10-15 dB。 - LO到IF隔离:5-10 dB。 - RF到IF隔离:10-15 dB。 - 输入IP3:+10 dBm(3.5 GHz时)。 - 1 dB压缩点(输入):-3到+1 dBm。 - 供电电流(Idd):7 mA(典型值)。

5. 功能详解: - HMC333/333E混频器具有8.5 dB的转换损耗和输入P1dB为0 dBm的特性,输入三阶截取点为+10 dBm。这些参数使得该混频器适用于需要高线性和低噪声的应用。

6. 应用信息: - 该混频器适用于无线本地环路等应用。

7. 封装信息: - HMC333和HMC333E的封装材料分别为Low Stress Injection Molded Plastic和RoHS-compliant Low Stress Injection Molded Plastic,焊料分别为Sn/Pb和100% matte Sn,MSL等级均为MSL1,封装标记分别为H333 xXXX和333E XXXX。
HMC333 价格&库存

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