HMC335G16

HMC335G16

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC335G16 - 1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 3 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC335G16 数据手册
v00.1102 MICROWAVE CORPORATION HMC335G16 1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 3 GHz Features 1 dB LSB Steps to 31 dB Single Control Line Per Bit +/- 0.5 dB Typical Bit Error 16 Lead Hermetic SMT Package Typical Applications The HMC335G16 is ideal for: 9 ATTENUATORS - SMT • Telecom Infrastructure • Military Radios, Radar & ECM • Space Applications • Test Instrumentation Functional Diagram General Description The HMC335G16 is a broadband 5-bit GaAs IC digital attenuator in a 16 lead glass/metal (hermetic) surface mount package. Covering DC to 3 GHz, the insertion loss is less than 2.3 dB typical. The attenuator bit values are 1 (LSB), 2, 4, 8, and 16 dB for a total attenuation of 31 dB. Attenuation accuracy is excellent at ±0.5 dB typical with an IIP3 of up to +44 dBm. Five bit control voltage inputs, toggled between 0 and -5V, are used to select each attenuation state at less than 70 µA each. A single Vee bias of -5V allows operation down to DC. Electrical Specifications, TA = +25° C, Vee = -5V & Vctl = 0/Vee Parameter Insertion Loss Frequency DC - 1.5 GHz 1.5 - 3.0 GHz DC - 3.0 GHz DC - 3.0 GHz Min. Typical 2.0 2.3 31 13 ± 0.3 + 5% of Atten. Setting Max ± 0.3 + 5% of Atten. Setting Max ± 0.3 + 8% of Atten. Setting Max ± 0.3 + 5% of Atten. Setting Max ± 0.3 + 8% of Atten. Setting Max ± 0.5 + 10% of Atten. Setting Max 24 44 Max. 2.5 2.8 Units dB dB dB dB Attenuation Range Return Loss (RF1 & RF2, All Atten. States) Attenuation Accuracy: (Referenced to Insertion Loss) 1 - 31 dB States 1 - 27 dB States 28 - 31 dB States 1 - 23 dB States 24 - 27 dB States 28 - 31 dB States Input Power for 0.1 dB Compression Input Third Order Intercept Point (Two-tone Input Power = 0 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 1.0 GHz 1.0 - 2.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 2.0 - 3.0 GHz 2.0 - 3.0 GHz 0.5 - 3.0 GHz 0.5 - 3.0 GHz DC - 3.0 GHz dB dB dB dB dB dB dBm dBm 140 160 ns ns 9 - 56 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1102 HMC335G16 1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 3 GHz Return Loss RF1, RF2 Insertion Loss 0 -1 INSERTION LOSS (dB) (Only Major States are Shown) 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 1 dB 2 dB 4 dB 8 dB 16 dB 31 dB 9 ATTENUATORS - SMT 9 - 57 -2 -3 -4 -5 -6 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) +25C +85C -40C 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Normalized Attenuation (Only Major States are Shown) 0 NORMALIZED ATTENUATION (dB) -5 -10 -15 -20 -25 -30 -35 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 1 dB 2 dB 4 dB 8 dB 16 dB 31 dB Bit Error vs. Attenuation State 3 2 BIT ERROR (dB) 1 0 -1 -2 -3 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 ATTENUATION STATE (dB) 0.12 GHz 1.0 GHz 2.0 GHz 3.0 GHz Bit Error vs. Frequency (Only Major States are Shown) 5 4 3 BIT ERROR (dB) 2 1 0 -1 -2 -3 -4 -5 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 1 dB 2 dB 4 dB 8 dB 16 dB 31 dB Relative Phase vs. Frequency (Only Major States are Shown) 100 80 RELATVIE PHASE (deg) 60 40 20 0 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 1 dB 2 dB 4 dB 8 dB 16 dB 31 dB For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1102 HMC335G16 1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 3 GHz Worst Case Step Error Between Successive Attenuation States 3 9 STEP ERROR (dB) 2 1 0 -1 -2 -3 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) ATTENUATORS - SMT Bias Voltage & Current Vee Range = -5.0 Vdc ± 10% Vee (VDC) -5.0 lee (Typ.) (mA) 3 lee (Max.) (mA) 6 Truth Table Control Voltage Input V1 16 dB Low Low Low V2 8 dB Low Low Low Low High Low High V3 4 dB Low Low Low High Low Low High V4 2 dB Low Low High Low Low Low High V5 1 dB Low High Low Low Low Low High Attenuation State RF1 - RF2 Reference I.L. 1 dB 2 dB 4 dB 8 dB 16 dB 31 dB Max. Atten. Control Voltage State Low High Bias Condition 0 to -2V @ 70 µA Typ. Vee to Vee + 0.8V @ 5 µA Typ. Low Low High High Note: Vee = -5V ± 10% Absolute Maximum Ratings Control Voltage (V1 - V5) Bias Voltage (Vee) Storage Temperature Operating Temperature RF Input Power (0.5 - 3 GHz) Vee - 0.5 Vdc -7.0 Vdc -65 to +150 °C -40 to +85 °C +26 dBm Any combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. 9 - 58 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1102 HMC335G16 1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 3 GHz Outline Drawing 9 ATTENUATORS - SMT NOTES: 1. PACKAGE MATERIAL: ALUMINA LOADED BOROSILICATE GLASS. 2. LEADS, BASE, COVER MATEIRAL: KOVARTM (#7052 CORNING). 3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER ELECTROLYTIC NICKEL 75 MICROINCHES MIN. 4. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. TOLERANCES: 0.005 [.013] UNLESS OTHERWISE SPECIFIED. 6. CHARACTERS TO BE HELVETICA MEDIUM .030 HIGH, BLACK INK, LOCATED APPROX. AS SHOWN. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Pin Descriptions Pin Number 1 Function Vee Description Supply Voltage -5V ±10% Interface Schematic 2, 4-9, 11 GND Package bottom must also be connected to RF ground. 3, 10 RF1, RF2 These pins are DC coupled and matched to 50 Ohm. Blocking capacitors are required. 12-16 V1-V5 See truth table and control voltage table. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 9 - 59 MICROWAVE CORPORATION v00.1102 HMC335G16 1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 3 GHz Application Circuit 9 ATTENUATORS - SMT DC Blocking Capacitors C1 & C2 are required on RF1 & RF2. Choose C1 = C2 = 100 pF ~ 0.1 uF to allow lowest customer specific frequency to pass with minimal loss. R1= 5K Ohm is required to supply voltage to the circuit through either Pin 3 or Pin 10. Suggested Driver Circuit (One Circuit Required Per Bit Control Input) Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current. * Recommended value to suppress unwanted RF signals at V1 - V5 control lines. 9 - 60 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1102 HMC335G16 1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 3 GHz Evaluation PCB 9 ATTENUATORS - SMT 9 - 61 * R2 - R6 = 100 Ohm. These resistors are optional and may be used to enhance decoupling of the RF path from the control inputs. List of Material Item J1 - J2 J3 R1 R2 - R6 C1, C2 C3 U1 PCB* Description PC Mount SMA Connector DC Connector 5k Ohm Resistor 0402 Pkg. 100 Ohm Resistor, 0402 Pkg. 0402 Chip Capacitor, Select Value for Lowest Frequency of Operation 1000pF Capacitor, 0603 Pkg. HMC335G16 Digital Attenuator 106467 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. *Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
HMC335G16
1. 物料型号: - HMC335G16:1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 3 GHz

2. 器件简介: - HMC335G16是一款宽带5位GaAs IC数字衰减器,采用16引脚玻璃/金属(密封)表面贴装封装。覆盖直流至3 GHz,插入损耗通常小于2.3 dB。衰减器位值为1(LSB)、2、4、8和16 dB,总衰减为31 dB。衰减精度为±0.5 dB,IIP3高达+44 dBm。五个位控制电压输入,在0和-5V之间切换,用于选择每个衰减状态,每个小于70 µA。单一Vee偏置-5V允许直流下操作。

3. 引脚分配: - Pin 1: Vee供电电压-5V ±10% - Pin 2, 4-9, 11: GND,封装底部也必须连接到RF地 - Pin 3, 10: RF1, RF2,这些引脚是直流耦合且匹配到50欧姆,需要阻塞电容器 - Pin 12-16: V1-V5,参见真值表和控制电压表

4. 参数特性: - 插入损耗:DC - 1.5 GHz时为2.0 dB,1.5-3.0 GHz时为2.3 dB - 衰减范围:DC-3.0 GHz时为31 dB - 回波损耗:DC-3.0 GHz时为13 dB - 衰减精度:1-31 dB状态为±0.5 dB,28-31 dB状态为0.5 + 10% of Atten. Setting Max - 输入功率:0.5-3.0 GHz时为24 dBm - 三阶互调点:0.5-3.0 GHz时为44 dBm - 切换特性:tRISE, FALL (10/90% RF)为140 ns,tON, tOFF (50% CTL to 10/90% RF)为160 ns

5. 功能详解: - HMC335G16适用于电信基础设施、军事无线电、雷达和ECM、空间应用、测试仪器等。 - 衰减位值分别为1 dB、2 dB、4 dB、8 dB和16 dB,通过控制电压输入选择不同的衰减状态。

6. 应用信息: - 在最终应用中,电路板应使用射频电路设计技术。信号线应具有50欧姆的阻抗,而封装地引脚和封装底部应直接连接到接地平面。应使用足够数量的通孔连接顶部和底部接地平面。评估电路板可根据要求从Hittite获得。

7. 封装信息: - 封装材料:ALUMINA LOADED BOROSILICATE GLASS - 引脚、底座、盖材料:KOVARTM (#7052 CORNING) - 镀层:电镀金至少50微英寸,电镀镍至少75微英寸 - 所有尺寸单位为英寸[毫米] - 公差:0.005 [.013],除非另有规定
HMC335G16 价格&库存

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