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HMC341LC3B

HMC341LC3B

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC341LC3B - SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
HMC341LC3B 数据手册
HMC341LC3B v02.1208 SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC341LC3B is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment & Sensors • Military End-Use Features 2.5 dB Noise Figure 13 dB Gain +3V @ 35 mA Supply 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT Package Functional Diagram General Description The HMC341LC3B is a GaAs PHEMT MMIC Low Noise Amplifier housed in a leadless RoHS compliant SMT package. Operating from 21 to 29 GHz, the amplifier provides 13 dB of gain and a noise figure of 2.5 dB from a single +3V supply. The RF I/Os are DC blocked and matched to 50 Ohms requiring no external components. The HMC341LC3B eliminates the need for wire bonding, allowing the use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd = +3V, Idd = 35 mA Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd = +3V) 10.5 Min. Typ. 21 - 24 13.5 0.016 3.25 10 14 8 11 19 35 0.025 5 10 Max. Min. Typ. 24 - 26 13 0.016 3 11 10 8.5 11.5 19 35 0.025 3.5 9 Max. Min. Typ. 26 - 29 12 0.016 2.5 9 9 8.5 11.5 19 35 0.025 3 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 8 - 26 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC341LC3B v02.1208 SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz Broadband Gain & Return Loss 15 Gain vs. Temperature 16 8 LOW NOISE AMPLIFIERS - SMT 8 - 27 5 RESPONSE (dB) S21 S11 S22 14 GAIN (dB) 12 -5 10 +25C +85C -40C -15 8 -25 20 22 24 26 28 30 32 FREQUENCY (GHz) 6 20 22 24 26 28 30 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 -5 +25C +85C -40C -10 -15 -15 -20 20 22 24 26 28 30 FREQUENCY (GHz) -20 20 22 24 26 28 30 FREQUENCY (GHz) Noise Figure vs. Temperature 10 +25C +85C -40C Output IP3 vs. Temperature 22 20 18 8 NOISE FIGURE (dB) 6 IP3 (dBm) 16 14 +25C +85C -40C 4 2 12 10 20 22 24 26 28 30 20 21 22 23 24 25 26 27 28 29 30 FREQUENCY (GHz) FREQUENCY (GHz) 0 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC341LC3B v02.1208 SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz 8 LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature 14 12 10 P1dB (dBm) 8 6 4 2 0 20 22 24 26 28 30 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 14 12 10 Psat (dBm) 8 6 4 2 0 20 22 24 26 28 30 FREQUENCY (GHz) +25C +85C -40C Power Compression @ 25 GHz 16 Pout (dBm), GAIN (dB), PAE (%) 12 Reverse Isolation vs. Temperature 0 -10 8 4 0 -4 -8 -20 -18 -16 -14 -12 -10 -8 -40 -6 -4 -2 0 2 4 6 20 22 24 ISOLATION (dB) Pout Gain PAE +25C +85C -40C -20 -30 26 28 30 INPUT POWER (dBm) FREQUENCY (GHz) Gain, Power & Noise Figure vs. Supply Voltage @ 25 GHz 16 GAIN (dB), P1dB (dBm), Psat (dBm), NOISE FIGURE (dB) 14 12 10 8 6 4 2 0 2.75 Gain P1dB Psat Noise Figure 3.25 3.75 4.25 4.75 5.25 Vdd Supply Voltage (Vdc) 8 - 28 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC341LC3B v02.1208 SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +2.7 +3.0 +4.0 +5.0 Idd (mA) 34 35 38 41 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 5.43 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc +5 dBm 175 °C 0.489 W 184 °C/W -65 to +150 °C -40 to +85 °C 8 LOW NOISE AMPLIFIERS - SMT 8 - 29 Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC341LC3B v02.1208 SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz 8 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description Interface Schematic 1 Vdd Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 μF are required. 2, 3, 7-9 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. Package bottom has an exposed metal paddle that must also be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohms from 21 - 29 GHz. This pin is AC coupled and matched to 50 Ohms from 21 - 29 GHz. 4, 6, 10, 12 GND 5 RFIN 11 RFOUT Application Circuit Component C1 C2 C3 Value 100 pF 1,000 pF 2.2 μF 8 - 30 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC341LC3B v02.1208 SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Materials for Evaluation PCB 112646 [1] Item J1, J2 J3, J4 C1 C2 C3 U1 PCB [2] Description SRI K-connector DC Pin 100 pF capacitor, 0402 pkg. 1,000 pF Capacitor, 0603 pkg. 2.2μF Capacitor, Tantalum HMC341LC3B Amplifier 112647 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 31
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