HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC341LC3B is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment & Sensors • Military End-Use
Features
2.5 dB Noise Figure 13 dB Gain +3V @ 35 mA Supply 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT Package
Functional Diagram
General Description
The HMC341LC3B is a GaAs PHEMT MMIC Low Noise Amplifier housed in a leadless RoHS compliant SMT package. Operating from 21 to 29 GHz, the amplifier provides 13 dB of gain and a noise figure of 2.5 dB from a single +3V supply. The RF I/Os are DC blocked and matched to 50 Ohms requiring no external components. The HMC341LC3B eliminates the need for wire bonding, allowing the use of surface mount manufacturing techniques.
Electrical Specifi cations, TA = +25° C, Vdd = +3V, Idd = 35 mA
Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd = +3V) 10.5 Min. Typ. 21 - 24 13.5 0.016 3.25 10 14 8 11 19 35 0.025 5 10 Max. Min. Typ. 24 - 26 13 0.016 3 11 10 8.5 11.5 19 35 0.025 3.5 9 Max. Min. Typ. 26 - 29 12 0.016 2.5 9 9 8.5 11.5 19 35 0.025 3 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA
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F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz
Broadband Gain & Return Loss
15
Gain vs. Temperature
16
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LOW NOISE AMPLIFIERS - SMT
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5 RESPONSE (dB)
S21 S11 S22
14
GAIN (dB)
12
-5
10
+25C +85C -40C
-15 8
-25 20 22 24 26 28 30 32 FREQUENCY (GHz)
6 20 22 24 26 28 30 FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C +85C -40C
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
-5
+25C +85C -40C
-10
-15
-15
-20 20 22 24 26 28 30 FREQUENCY (GHz)
-20 20 22 24 26 28 30 FREQUENCY (GHz)
Noise Figure vs. Temperature
10
+25C +85C -40C
Output IP3 vs. Temperature
22 20 18
8 NOISE FIGURE (dB)
6
IP3 (dBm)
16 14
+25C +85C -40C
4
2
12 10 20 22 24 26 28 30 20 21 22 23 24 25 26 27 28 29 30 FREQUENCY (GHz) FREQUENCY (GHz)
0
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz
8
LOW NOISE AMPLIFIERS - SMT
P1dB vs. Temperature
14 12 10 P1dB (dBm) 8 6 4 2 0 20 22 24 26 28 30 FREQUENCY (GHz)
+25C +85C -40C
Psat vs. Temperature
14 12 10 Psat (dBm) 8 6 4 2 0 20 22 24 26 28 30 FREQUENCY (GHz)
+25C +85C -40C
Power Compression @ 25 GHz
16 Pout (dBm), GAIN (dB), PAE (%) 12
Reverse Isolation vs. Temperature
0
-10 8 4 0 -4 -8 -20 -18 -16 -14 -12 -10 -8 -40 -6 -4 -2 0 2 4 6 20 22 24 ISOLATION (dB)
Pout Gain PAE
+25C +85C -40C
-20
-30
26
28
30
INPUT POWER (dBm)
FREQUENCY (GHz)
Gain, Power & Noise Figure vs. Supply Voltage @ 25 GHz
16 GAIN (dB), P1dB (dBm), Psat (dBm), NOISE FIGURE (dB) 14 12 10 8 6 4 2 0 2.75
Gain P1dB Psat Noise Figure
3.25
3.75
4.25
4.75
5.25
Vdd Supply Voltage (Vdc)
8 - 28
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc) +2.7 +3.0 +4.0 +5.0 Idd (mA) 34 35 38 41
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 5.43 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc +5 dBm 175 °C 0.489 W 184 °C/W -65 to +150 °C -40 to +85 °C
8
LOW NOISE AMPLIFIERS - SMT
8 - 29
Note: Amplifier will operate over full voltage ranges shown above.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz
8
LOW NOISE AMPLIFIERS - SMT
Pin Descriptions
Pin Number Function Description Interface Schematic
1
Vdd
Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 μF are required.
2, 3, 7-9
N/C
No connection required. These pins may be connected to RF/DC ground without affecting performance. Package bottom has an exposed metal paddle that must also be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohms from 21 - 29 GHz. This pin is AC coupled and matched to 50 Ohms from 21 - 29 GHz.
4, 6, 10, 12
GND
5
RFIN
11
RFOUT
Application Circuit
Component C1 C2 C3 Value 100 pF 1,000 pF 2.2 μF
8 - 30
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz
Evaluation PCB
8
LOW NOISE AMPLIFIERS - SMT
List of Materials for Evaluation PCB 112646 [1]
Item J1, J2 J3, J4 C1 C2 C3 U1 PCB [2] Description SRI K-connector DC Pin 100 pF capacitor, 0402 pkg. 1,000 pF Capacitor, 0603 pkg. 2.2μF Capacitor, Tantalum HMC341LC3B Amplifier 112647 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350.
The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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