HMC342LC4_09

HMC342LC4 v03.0409 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC342LC4 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment & Sensors • Military End-Use Features Noise Figure: 3.5 dB Gain: 22 dB Single Positive Supply: +3V @ 43 mA 50 Ohm Matched Input/Output RoHS Compliant 4x4 mm SMT Package Functional Diagram General Description The HMC342LC4 is a GaAs PHEMT MMIC Low Noise Amplifier housed in a leadless 4x4 mm RoHS compliant SMT package. Operating from 13 to 25 GHz, the amplifier provides 22 dB of gain and +19 dBm of output IP3 from a single +3V supply. The low noise figure performance of 3.5 dB is ideal for receive and transmit pre-driver applications. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC342LC4 allows the use of surface mount manufacturing techniques and requires no external matching components. Electrical Specifi cations, TA = +25° C, Vdd = +3V, Idd = 43 mA Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd = +3V) 19 Min. Typ. 13 - 18 22 0.025 3.5 15 15 7 9 16 43 0.035 4.0 17 Max. Min. Typ. 18 - 22 20 0.025 3.5 15 20 8 11 19 43 0.035 4.0 16 Max. Min. Typ. 22 - 25 19 0.025 3.5 10 15 9 11.5 20 43 0.035 4.5 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 8 - 32 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC342LC4 v03.0409 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 S21 S11 S22 Gain vs. Temperature 28 25 22 GAIN (dB) 19 16 13 10 +25 C +85 C -40 C 8 LOW NOISE AMPLIFIERS - SMT 8 - 33 5 0 -5 -10 -15 -20 -25 -30 8 10 12 14 16 18 20 22 24 26 28 30 12 14 16 18 20 22 24 26 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 12 14 16 18 20 22 24 26 FREQUENCY (GHz) +25 C +85 C -40 C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 12 14 16 18 20 22 24 26 FREQUENCY (GHz) +25 C +85 C -40 C Noise Figure vs. Temperature 10 +25 C +85 C -40 C Output IP3 vs. Temperature 24 22 20 IP3 (dBm) 18 16 14 8 NOISE FIGURE (dB) 6 4 2 12 0 12 14 16 18 20 22 24 26 FREQUENCY (GHz) 10 12 14 16 18 20 +25 C +85 C -40 C 22 24 26 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC342LC4 v03.0409 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz 8 LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature 14 12 10 P1dB (dBm) 8 6 4 2 0 12 14 16 18 20 22 24 26 FREQUENCY (GHz) +25 C +85 C -40 C Psat vs. Temperature 14 12 10 Psat (dBm) 8 6 4 2 0 12 14 16 18 20 22 24 26 FREQUENCY (GHz) +25 C +85 C -40 C Power Compression @ 20 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 19 14 9 4 -1 -6 -26 Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) Pout Gain PAE -20 -30 -40 -50 -60 +25 C +85 C -40 C -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 12 14 16 18 20 22 24 26 INPUT POWER (dBm) FREQUENCY (GHz) Gain, Power & Noise Figure vs. Supply Voltage @ 20 GHz GAIN (dB), P1dB (dBm), Psat (dBm), NOISE FIGURE (dB) 24 20 16 12 8 4 0 2.7 Gain P1dB Psat Noise Figure 3 Vdd Supply Voltage (Vdc) 3.3 8 - 34 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC342LC4 v03.0409 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +2.7 +3.0 +3.3 Idd (mA) 42 43 44 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 3.62 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc 0 dBm 175 °C 0.326 W 276 °C/W -65 to +150 °C -40 to +85 °C 8 LOW NOISE AMPLIFIERS - SMT 8 - 35 Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC342LC4 v03.0409 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz 8 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 5 - 14, N/C 18 - 20, 22 - 24 2, 4, 15, 17 GND Function Description No connection required. These pins may be connected to RF/DC ground without affecting performance. Package base has an exposed metal ground that must also be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohms. This pin is AC coupled and matched to 50 Ohms. Interface Schematic 3 16 RFIN RFOUT 21 Vdd Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 μF are required. Application Circuit Component C1 C2 C3 Value 100 pF 1,000 pF 2.2 μF 8 - 36 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC342LC4 v03.0409 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Materials for Evaluation PCB 110209 [1] Item J1, J2 J3, J4 C1 C2 C3 U1 PCB [2] Description 2.92 mm PC mount K-connector DC Pin 100 pF capacitor, 0402 pkg. 1,000 pF Capacitor, 0603 pkg. 2.2μF Capacitor, Tantalum HMC342LC4 Amplifier 108535 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 37