HMC344

HMC344 v06.0709 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Typical Applications The HMC344 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military & Space Features Broadband Performance: DC - 8 GHz Non-Reflective Topology Low Insertion Loss: 1.8 dB @ 6 GHz Integrated 2:4 TTL Decoder Small Size: 1.08 x 1.05 x 0.10 mm 4 SWITCHES - CHIP • Test Instrumentation Functional Diagram General Description The HMC344 is a broadband non-reflective GaAs MESFET SP4T switch chip. Covering DC to 8 GHz, this switch offers high isolation, low insertion loss, and a compact form factor. This switch also includes an on board binary decoder circuit which reduces the number of required logic control lines to two. The switch operates using a negative control voltage of 0/-5V, and requires a fixed bias of -5V. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (12 mils). This SP4T switch is also available in SMT packaged form as the HMC344LC3. Electrical Specifi cations, TA = +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System Parameter Insertion Loss Frequency DC - 6.0 GHz DC - 8.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 8.0 GHz “On State” “Off State” DC - 2.0 GHz DC - 8.0 GHz DC - 8.0 GHz 0.5 - 8.0 GHz 0.5 - 8.0 GHz DC - 8.0 GHz 35 150 ns ns 44 37 34 30 10 7 7 17 37 Min. Typ. 1.8 1.9 49 42 39 35 14 10 10 21 40 Max. 2.1 2.2 Units dB dB dB dB dB dB dB dB dB dBm dBm Isolation Return Loss Return Loss Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 4 - 20 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC344 v06.0709 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Insertion Loss vs. Temperature 1 + 25C + 85C - 55C Isolation 0 RF1 RF2 RF3 RF4 INSERTION LOSS (dB) 0 -20 ISOLATION (dB) -1 -40 -2 -3 -60 4 0 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 9 -4 0 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 9 -80 Return Loss 0 0.1 and 1 dB Input Compression Point 25 INPUT COMPRESSION POINT (dBm) 1dB Compression Point 0.1dB Compression Point RETURN LOSS (dB) -5 RFC RF1, RF2, RF3, RF4 ON RF1, RF2, RF3, RF4 OFF 23 21 -10 19 -15 17 -20 0 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) 15 2 3 4 5 6 7 8 9 FREQUENCY (GHz) Input Third Order Intercept Point INPUT THIRD ORDER INTERCEPT (dBm) 45 43 41 39 37 RF1 RF2 RF3 RF4 35 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 21 SWITCHES - CHIP HMC344 v06.0709 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Absolute Maximum Ratings Bias Voltage Range (Vee) Control Voltage Range (A & B) Channel Temperature Thermal Resistance (Insertion Loss Path) -7V Vee -0.5V to +1V 150 °C 143 °C/W 1,030 °C/W -65 to +150 °C -55 to +85 °C +24 dBm Class 1A Truth Table Control Input A High Low High Low B High High Low Low Signal Path State RF COM to: RF1 RF2 RF3 RF4 4 SWITCHES - CHIP Thermal Resistance (Terminated Path) Storage Temperature Operating Temperature Maximum Input Power ESD Sensitivity (HBM) Bias Voltage & Current Vee Range = -5 Vdc ±10% Vee (V) -5 Idd (Typ) (mA) 3 Idd (Max) (mA) 6 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TTL/CMOS Control Voltages State Low High Bias Condition -3V to 0 Vdc @ 60 uA Typ. -5 to 4.2 Vdc @ 5 uA Typ. 4 - 22 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC344 v06.0709 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Outline Drawing 4 SWITCHES - CHIP Die Packaging Information [1] Standard WP-2 (Waffle Pack) Alternate [2] NOTES: 1. DIMENSIONS IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS 0.004”. 3. TYPICAL BOND PAD IS 0.004” SQUARE. 4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 23 HMC344 v06.0709 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Pad Descriptions Pad Number 1, 2, 3, 4, 5, 10 Function RF4, RFC, RF1, RF2, RF3 Description These pads are DC coupled and matched to 50 Ohms. Blocking capacitors are required. Interface Schematic 6 A See truth table and control voltage table. 4 SWITCHES - CHIP 7 B See truth table and control voltage table. 8 Vee Supply Voltage -5.0 Vdc ±10% 9, Die Bottom GND Die bottom and pad must be connected to RF/DC ground. TTL Interface Circuit Note: Control inputs A and B can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and to Vee (pad) of the RF Switch. 4 - 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC344 v06.0709 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Assembly Diagram 4 SWITCHES - CHIP For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 25