0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
HMC346C8_08

HMC346C8_08

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC346C8_08 - GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR, DC - 8 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC346C8_08 数据手册
HMC346C8 v02.1008 GaAs MMIC SMT VOLTAGEVARIABLE ATTENUATOR, DC - 8 GHz 5 ATTENUATORS - SMT Typical Applications The HMC346C8 is ideal for: • Basestation Infrastructure • Fiber Optics & Broadband Telecom • Microwave Radio & VSAT • Military Radios, Radar, & ECM • Test Instrumentation Features Wide Bandwidth: DC - 8 GHz Low Phase Shift vs. Attenuation 30 dB Attenuation Range Surface Mount Ceramic Package Functional Diagram General Description The HMC346C8 is an absorptive Voltage Variable Attenuator (VVA) in a non-hermetic surface-mount ceramic package operating from DC - 8 GHz. It features an on-chip reference attenuator for use with an external op-amp to provide simple single voltage attenuation control, 0 to -3V. The device is ideal in designs where an analog DC control signal must control RF signal levels over a 30 dB amplitude range. Applications include AGC circuits and temperature compensation of multiple gain stages in microwave radios and test instrumentation. Electrical Specifi cations, TA = +25° C, 50 ohm system Parameter Insertion Loss Attenuation Range Return Loss Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) Input Power for 0.25 dB Compression (0.5 - 8 GHz) Input Third Order Intercept (0.5 - 8 GHz) (Two-tone Input Power = -8 dBm Each Tone) Min. Atten. Atten. >2 dB Min. Atten. Atten. >2 dB DC - 6 GHz DC - 8 GHz DC - 8 GHz DC - 8 GHz Min Typical 1.9 2.1 30 10 2 8 +8 -2 +25 +10 Max 2.9 3.1 Units dB dB dB dB ns ns dBm dBm dBm dBm 5 - 78 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC346C8 v02.1008 GaAs MMIC SMT VOLTAGEVARIABLE ATTENUATOR, DC - 8 GHz Insertion Loss vs. Temperature 0 Relative Attenuation, Control Voltage Optimized for 4 GHz Operation 0 -5 5 ATTENUATORS - SMT 5 - 79 INSERTION LOSS (dB) -1 ATTENUATION (dB) -10 -15 -20 -25 -30 -5 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) -35 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) -2 +25C +85C -40C -3 -4 Return Loss vs. Attenuation 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 5dB 10dB 15dB 20dB 25dB 30dB Relative Attenuation, Control Voltage Optimized for 8 GHz Operation 0 -5 ATTENUATION (dB) -10 -15 -20 -25 -30 -35 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Relative Attenuation vs. Control Voltage @ 4 GHz 0 CONTROL VOLTAGE (Vdc) -0.5 -1 -1.5 -2 -2.5 -3 0 5 10 15 20 25 30 RELATIVE ATTENUATION (dB) V1 +25C V2 +25C V1 +85C V2 +85C V1 -40C V2 -40C Relative Attenuation vs. Control Voltage @ 8 GHz 0 CONTROL VOLTAGE (Vdc) -0.5 -1 -1.5 -2 -2.5 -3 0 5 10 15 20 25 30 RELATIVE ATTENUATION (dB) V1 +25C V2 +25C V1 +85C V2 +85C V1 -40C V2 -40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC346C8 v02.1008 GaAs MMIC SMT VOLTAGEVARIABLE ATTENUATOR, DC - 8 GHz 5 ATTENUATORS - SMT Relative Phase 140 120 RELATIVE PHASE (DEG) 100 80 60 40 5dB 10dB 15dB 20dB 25dB 30dB Input Third Order Intercept vs. Attenuation* 30 25 0 dB 3 dB 10 dB 6 dB IP3 (dBm) 20 15 10 20 0 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 5 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Input Second Order Intercept vs. Attenuation* 70 60 50 IP2 (dBm) 40 30 20 10 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Second Harmonic vs. Attenuation 80 70 0 dB 60 50 40 30 20 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) 6 dB 3 dB 10 dB 0 dB 3 dB 6 dB 10 dB 0.25 dB Compression vs. Attenuation INPUT 0.25 dB COMPRESSION (dBm) 15 1 dB Compression vs. Attenuation 20 SECOND HARMONIC (dBc) P1dB (dBm) 10 16 12 5 6 dB 0 dB (REF) 6dB 0dB 8 0 4 -5 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 0 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) *Two-tone input power = -8 dBm each tone. 5 - 80 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC346C8 v02.1008 GaAs MMIC SMT VOLTAGEVARIABLE ATTENUATOR, DC - 8 GHz Absolute Maximum Ratings RF Input Power Control Voltage Range Channel Temperature Thermal Resistance Storage Temperature Operating Temperature ESD Sensitivity (HBM) +18 dBm +1.0 to -5V 150 °C 190 °C/W -65 to +150 °C -40 to +85 °C Class 1A 5 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE MATERIAL: ALUMINA LOADED BOROSILICATE GLASS. 2. LEAD, BASE, COVER MATERIAL: KOVAR™ (#7052 CORNING). 3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER ELECTROLYTIC NICKEL 50 MICROINCHES MIN. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. TOLERANCES: ±.005 [0.13] UNLESS OTHERWISE SPECIFIED. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 81 ATTENUATORS - SMT HMC346C8 v02.1008 GaAs MMIC SMT VOLTAGEVARIABLE ATTENUATOR, DC - 8 GHz 5 ATTENUATORS - SMT Pin Descriptions Pin Number 1, 8 Function RF1, RF2 Description This pin is DC coupled and matched to 50 Ohms. Blocking capacitors are required if RF line potential is not equal to 0V. Interface Schematic 2, 7 GND This pin must be DC grounded. 3, 6 V2, V1 Control Input (Master). 4 I Control Input (Slave). 5 O This pin must have an external 500 Ohm resistor to ground. Single-Line Control Driver Note: External op-amp control circuit maintains impedance match while attenuation is varied. Input control ranges from 0 Volts (min. attenuation) to -2.5 Volts (max. attenuation.) 5 - 82 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC346C8 v02.1008 GaAs MMIC SMT VOLTAGEVARIABLE ATTENUATOR, DC - 8 GHz Evaluation PCB 5 ATTENUATORS - SMT List of Materials for Evaluation PCB 109023 [1] Item J1 - J2 J3 - J7 U1 PCB [2] Description PCB Mount SMA RF Connector DC PIN HMC346C8 Eval Board 102084-5 [1] Reference this number when ordering complete evaluation PCB [2]Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF ports should be 50 ohm impedance and the package ground leads and package bottom should be connected directly to the PCB RF ground plane, similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 83
HMC346C8_08
1. 物料型号:HMC346C8 2. 器件简介:HMC346C8是一款基于砷化镓(GaAs)MMIC技术的表面贴装电压可变衰减器,工作频率范围为直流至8GHz。该器件适用于需要模拟直流控制信号来控制射频信号幅度范围在30dB内的电路设计。 3. 引脚分配: - 1, 8脚:RF1, RF2,直流耦合且匹配至50欧姆,如果RF线电位不为0V,则需要接阻塞电容器。 - 2, 7脚:GND,必须直流接地。 - 3, 6脚:V2, V1。 - 4脚:I。 - 5脚:O,必须外接500欧姆电阻至地。 4. 参数特性: - 插入损耗:直流至6GHz为1.9-2.9dB,直流至8GHz为2.1-3.1dB。 - 衰减范围:30dB。 - 回波损耗:直流至8GHz为10dB。 - 开关特性:tON, tOFF(50% CTL到10/90% RF)为2ns,tRISE, tFALL(10/90% RF)为8ns。 - 输入功率:0.25dB压缩点(0.5-8GHz)为+8dBm至-2dBm,输入三阶截取点(0.5-8GHz)为+25dBm至+10dBm。 5. 功能详解:HMC346C8具有宽带宽(直流至8GHz)、低相位偏移与衰减比、30dB衰减范围等特点,适用于基站基础设施、光纤与宽带电信、微波无线电与VSAT、军事无线电、雷达与ECM、测试仪器等多种应用。 6. 应用信息:适用于自动增益控制电路和在微波无线电及测试仪器中的多增益级的温度补偿。 7. 封装信息:封装材料为含氧化铝的硼硅酸盐玻璃,引线、基底、盖材料为KOVAR™,电镀层至少有50微英寸的电解脱金和50微英寸的电解镍。所有接地引线和接地垫必须焊接到PCB射频接地。
HMC346C8_08 价格&库存

很抱歉,暂时无法提供与“HMC346C8_08”相匹配的价格&库存,您可以联系我们找货

免费人工找货