HMC347

HMC347 v04.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Typical Applications This switch is suitable DC - 20 GHz applications: • Fiber Optics • Microwave Radio • Military Features High Isolation: >40 dB @ 20 GHz Low Insertion Loss: 1.6 dB @ 20 GHz Non-Reflective Design Small Size: 1.3 x 0.8 x 0.1 mm 4 SWITCHES - CHIP • Space • VSAT Functional Diagram General Description The HMC347 is a broadband non-reflective GaAs MESFET SPDT MMIC chip. Covering DC to 20 GHz, the switch offers high isolation and low insertion loss. The switch features over 50 dB isolation at lower frequencies and over 40 dB at higher frequencies due to the implementation of on-chip via hole structures. The switch operates using two negative control voltage logic lines of -5/0V, requires no Vee and has no current consumption. The switch operates down to DC. The chip features coplanar I/Os that allow 100% RF testing prior to delivery to the customer. Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System Parameter Insertion Loss Isolation Return Loss Return Loss RF1, RF2 Input Power for 1 dB Compression Input Third Order Intercept Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) “On State” “On State” Frequency DC - 20.0 GHz DC - 20.0 GHz DC - 20.0 GHz DC - 20.0 GHz 0.5 - 20.0 GHz 0.5 - 20.0 GHz DC - 20.0 GHz 40 10 8 19 38 Min. Typ. 1.7 45 13 10 23 43 3 6 Max. 2.2 Units dB dB dB dB dBm dBm ns ns 4 - 26 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC347 v04.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Insertion Loss 0 Isolation 0 -10 INSERTION LOSS (dB) -1 ISOLATION (dB) -20 -30 -40 -50 -60 -5 0 5 10 15 20 25 FREQUENCY (GHz) -70 0 5 10 15 20 25 FREQUENCY (GHz) RF1 RF2 -2 +25C -55C +85C -3 4 SWITCHES - CHIP 4 - 27 -4 Return Loss 0 RFC RF1,2 On RF1,2 Off 0.1 and 1 dB Input Compression Point 30 1 dB Compression Point 0.1 dB Compression Point -5 RETURN LOSS (dB) 25 P1dB (dBm) -10 20 -15 -20 15 -25 0 5 10 15 20 25 FREQUENCY (GHz) 10 0 5 10 FREQUENCY (GHz) 15 20 Input Third Order Intercept Point 50 45 IP3 (dBm) 40 35 +25C -55C +85C 30 0 2 4 6 8 10 12 14 16 18 20 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC347 v04.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Control Voltages State Low High Bias Condition 0 to -0.2V @ 10 uA Max. -5V @ 10 uA Typ. to -7V @ 40 uA Max. Absolute Maximum Ratings RF Input Power (Vctl = -5V) Control Voltage Range (A & B) Channel Temperature Thermal Resistance (Insertion Loss Path) +27 dBm +0.5V to -7.5 Vdc 150 °C 440 °C/W 540 °C/W -65 to +150 °C 4 SWITCHES - CHIP Thermal Resistance (Terminated Path) Storage Temperature Operating Temperature ESD Sensitivity (HBM) Truth Table Control Input A B Low High Signal Path State RFC to RF1 ON OFF RFC to RF2 OFF ON -55 to +85 °C High Class 1A Low ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard WP-8 (Waffle Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 4 - 28 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC347 v04.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Suggested Driver Circuit 4 SWITCHES - CHIP Pad Descriptions Pad Number 1, 4, 7 Function RFC, RF1, RF2 Description This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if the RF line potential is not equal to 0V. Interface Schematic 2, 5, 8, 10 CTRLA See truth table and control voltage table. 3, 6, 9 CTRLB See truth table and control voltage table. GND Die bottom must be connected to RF ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 29 HMC347 v04.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Assembly Diagram 4 SWITCHES - CHIP 4 - 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC347 v04.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 4 SWITCHES - CHIP 4 - 31 Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible