HMC347C8

HMC347C8

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC347C8 - GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC347C8 数据手册
HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Features Isolation: 50 dB @ 2.5 GHz 36 dB @ 8.0 GHz Insertion Loss: 2.0 dB Typical Non-Reflective Design Surface Mount Ceramic Package Typical Applications The HMC347C8 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military Radios, Radar & ECM 8 SWITCHES - SMT • Test Instrumentation Functional Diagram General Description The HMC347C8 is a broadband high isolation nonreflective GaAs MESFET SPDT switch in a non-hermetic surface mount ceramic package. Covering DC to 8.0 GHz, the switch features >50 dB isolation up to 2 GHz and >35 dB isolation up to 8.0 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. This SPDT is an excellent replacement for the HMC132C8 SPDT. Electrical Specifications, TA = +25° C, With 0/-5V Control, 50 Ohm System Parameter Insertion Loss Frequency DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz “On State” DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz 0.5 - 8.0 GHz 0.5 - 8.0 GHz 19 38 49 35 32 10 7 6 Min. Typ. 1.7 2.0 2.4 54 40 36 13 10 9 9 6 6 23 43 Max. 2.0 2.4 2.8 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm Isolation Return Loss Return Loss RF1, RF2 Input Power for 1 dB Compression “Off State” Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 8.0 GHz 3 6 ns ns 8 - 196 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Insertion Loss 0 Isolation 0 -10 -1 INSERTION LOSS (dB) ISOLATION (dB) -20 -30 -40 -50 -4 + 25C + 85C - 40C RF1 RF2 -2 -3 8 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8 -60 -70 -5 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Return Loss 0 0.1 and 1 dB Input Compression Point 30 1 dB Compression Point 0.1 dB Compression Point RETURN LOSS (dB) -10 INPUT P1dB (dBm) -5 25 20 -15 RFC RF1, RF2 ON RF1, RF2 OFF 15 -20 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) 10 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Input Third Order Intercept Point 50 45 INPUT IP3 (dBm) 40 35 +25C +85C -40C 30 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 197 SWITCHES - SMT HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Absolute Maximum Ratings RF Input Power (Vctl = -5V) Control Voltage Range (A & B) Channel Temperature Thermal Resistance (Insertion Loss Path) +27 dBm +0.5V to -7.5 Vdc 150 °C 440 °C/W 540 °C/W -65 to +150 °C -55 to +85 °C Class 1A Control Voltages State Low High Bias Condition 0 to -0.2V @ 10 uA Max. -5V @ 10 uA Typ. to -7V @ 40 uA Typ. (± 0.5 Vdc) 8 SWITCHES - SMT Thermal Resistance (Terminated Path) Storage Temperature Operating Temperature ESD Sensitivity (HBM) Truth Table Control Input A High Low B Low High Signal Path State RFC to RF1 On Off RFC to RF2 Off On Caution: Do not “Hot Switch” power levels greater than +13 dBm (Vctl = 0/-5 Vdc). ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92% 2. LEAD, PACKAGE BOTTOM MATERIAL: COPPER 3. PLATING: ELECTROLYTIC GOLD 100-200 MICROINCHES, OVER ELECTROLYTIC NICKEL 100-250 MICROINCHES. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. PACKAGE LENGTH AND WIDTH DIMENSIONS DO NOT INCLUDE LID SEAL PROTRUSION .005 PER SIDE. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 8 - 198 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Suggested Driver Circuit 8 SWITCHES - SMT Pin Descriptions Pin Number 1, 4, 7 Function RFC, RF1, RF2 Description This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. Package bottom must also be connected to PCB RF ground. Interface Schematic 2, 3, 8 GND 5 CTLA See truth table and control voltage table. 6 CTLB See truth table and control voltage table. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 199 HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Evaluation PCB 8 SWITCHES - SMT List of Materials for Evaluation PCB 107261 [1] Item J1 - J3 J4 - J6 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin HMC347C8 SPDT Switch 102088 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. 8 - 200 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Notes: 8 SWITCHES - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 201
HMC347C8
物料型号: - HMC347C8

器件简介: - HMC347C8是一款宽带高隔离非反射GaAs MESFET SPDT开关,工作频率范围从直流到8.0GHz。该开关提供超过50dB的隔离度,直到2GHz,以及超过35dB的隔离度,直到8.0GHz。开关使用互补负控制电压逻辑线(-5V/0V),不需要偏置电源。

引脚分配: - Pin 1, 4, 7:RFC, RF1, RF2,这些引脚是直流耦合并且匹配到50欧姆。如果RF线电位不等于0V,则需要阻塞电容器。 - Pin 2, 3, 8:GND,封装底部也必须连接到PCB射频地。

参数特性: - 隔离度:2.5GHz时为50dB,8.0GHz时为36dB。 - 插入损耗:典型值为2.0dB。 - 非反射设计。 - 表面贴装陶瓷封装。

功能详解: - HMC347C8适用于电信基础设施、微波无线电&VSAT、军事无线电、雷达&ECM、测试仪器等场合。 - 该开关具有高隔离度和低插入损耗,使其成为HMC132C8 SPDT的优秀替代品。

应用信息: - 该开关适用于需要高隔离度和宽带宽的应用场合,如上述典型应用。

封装信息: - 封装类型为表面贴装陶瓷封装。 - 封装材料:白色氧化铝92%,引线和封装底部材料:铜,镀层:电镀金100-200微英寸,覆盖电镀镍100-250微英寸。 - 尺寸单位为英寸[毫米],长度和宽度尺寸不包括密封凸起每侧0.005。
HMC347C8 价格&库存

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