HMC349LP4C / 349LP4CE
v02.1205
HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz
Typical Applications
The HMC349LP4C / HMC349LP4CE is ideal for: • Basestation Infrastructure • MMDS & 3.5 GHz WLL • CATV/CMTS • Test Instrumentation
Features
High Isolation: 67 dB @ 1 GHz 62 dB @ 2 GHz Single Positive Control: 0/+5V +52 dBm Input IP3 Non-Reflective Design All Off State
Functional Diagram
16 mm2 Leadless QFN SMT Package
General Description
10
SWITCHES - SMT
The HMC349LP4C & HMC349LP4CE are high isolation non-reflective DC to 4 GHz GaAs MESFET SPDT switches in low cost leadless surface mount packages. The switch is ideal for cellular/PCS/3G basestation applications yielding 60 to 65 dB iso-lation, low 0.9 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state.
Electrical Specifi cations, TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System
Parameter Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz DC - 1.0 GHz DC - 4.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz 0.5 - 4.0 GHz 0.25 - 4.0 GHz 0.25 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz DC - 4.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 50 120 ns ns 27 60 55 Min. Typ. 0.9 1.0 1.2 1.4 67 62 20 15 13 15 31 52 50 49 46 Max. 1.2 1.3 1.5 1.7 Units dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm
Insertion Loss
Isolation (RFC to RF1/RF2)
Return Loss (On State) Return Loss (Off State) Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) Switching Speed
10 - 238
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC349LP4C / 349LP4CE
v02.1205
HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz
Insertion Loss
0
Return Loss
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30
RFC RF1, RF2 ON RF1, RF2 OFF
INSERTION LOSS (dB)
-1
-2
+25C +85C -40C
-3
-4
-5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
Note: RFC is refl ective in “all off” state.
10
SWITCHES - SMT
10 - 239
Isolation Between Ports RFC and RF1 / RF2
0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz)
RF1 RF2 ALL OFF
Isolation Between Ports RF1 and RF2
0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz)
RFC-RF1 ON RFC-RF2 ON
0.1 and 1 dB Input Compression Point
34 INPUT COMPRESSION (dBm) 32
Input Third Order Intercept Point
60
+25C +85C -40C
56 30 IP3 (dBm)
0.1 dB Compression Point 1 dB Compression Point
28 26 24 22 20 0 1 2 FREQUENCY (GHz) 3 4
52
48
44
40 0 1 2 FREQUENCY (GHz) 3 4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC349LP4C / 349LP4CE
v02.1205
HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz
Absolute Maximum Ratings
RF Input Power (Vctl = 0V/+5V) (0.25 - 4 GHz) Supply Voltage Range (Vdd) Control Voltage Range (Vctl) Hot Switch Power Level (Vdd = +5V) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 12 mW/°C above 85 °C) Thermal Resistance Storage Temperature +30 dBm (T = +85 °C) +7 Vdc -1V to Vdd +1V +30 dBm 150 °C 0.75 W 87 °C/W -65 to +150 °C -40 to +85 °C Class 1A
Bias Voltage & Current
Vdd Range = +5.0 Vdc ± 10% Vdd (Vdc) +5.0 Idd (Typ.) (mA) 2.3 Idd (Max.) (mA) 5.0
TTL/CMOS Control Voltages
State Low High Bias Condition 0 to +0.8 Vdc @
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