HMC349LP4CE

HMC349LP4C / 349LP4CE v02.1205 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Typical Applications The HMC349LP4C / HMC349LP4CE is ideal for: • Basestation Infrastructure • MMDS & 3.5 GHz WLL • CATV/CMTS • Test Instrumentation Features High Isolation: 67 dB @ 1 GHz 62 dB @ 2 GHz Single Positive Control: 0/+5V +52 dBm Input IP3 Non-Reflective Design All Off State Functional Diagram 16 mm2 Leadless QFN SMT Package General Description 10 SWITCHES - SMT The HMC349LP4C & HMC349LP4CE are high isolation non-reflective DC to 4 GHz GaAs MESFET SPDT switches in low cost leadless surface mount packages. The switch is ideal for cellular/PCS/3G basestation applications yielding 60 to 65 dB iso-lation, low 0.9 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state. Electrical Specifi cations, TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System Parameter Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz DC - 1.0 GHz DC - 4.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz 0.5 - 4.0 GHz 0.25 - 4.0 GHz 0.25 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz DC - 4.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 50 120 ns ns 27 60 55 Min. Typ. 0.9 1.0 1.2 1.4 67 62 20 15 13 15 31 52 50 49 46 Max. 1.2 1.3 1.5 1.7 Units dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm Insertion Loss Isolation (RFC to RF1/RF2) Return Loss (On State) Return Loss (Off State) Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) Switching Speed 10 - 238 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC349LP4C / 349LP4CE v02.1205 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Insertion Loss 0 Return Loss 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 RFC RF1, RF2 ON RF1, RF2 OFF INSERTION LOSS (dB) -1 -2 +25C +85C -40C -3 -4 -5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) Note: RFC is refl ective in “all off” state. 10 SWITCHES - SMT 10 - 239 Isolation Between Ports RFC and RF1 / RF2 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) RF1 RF2 ALL OFF Isolation Between Ports RF1 and RF2 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) RFC-RF1 ON RFC-RF2 ON 0.1 and 1 dB Input Compression Point 34 INPUT COMPRESSION (dBm) 32 Input Third Order Intercept Point 60 +25C +85C -40C 56 30 IP3 (dBm) 0.1 dB Compression Point 1 dB Compression Point 28 26 24 22 20 0 1 2 FREQUENCY (GHz) 3 4 52 48 44 40 0 1 2 FREQUENCY (GHz) 3 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC349LP4C / 349LP4CE v02.1205 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Absolute Maximum Ratings RF Input Power (Vctl = 0V/+5V) (0.25 - 4 GHz) Supply Voltage Range (Vdd) Control Voltage Range (Vctl) Hot Switch Power Level (Vdd = +5V) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 12 mW/°C above 85 °C) Thermal Resistance Storage Temperature +30 dBm (T = +85 °C) +7 Vdc -1V to Vdd +1V +30 dBm 150 °C 0.75 W 87 °C/W -65 to +150 °C -40 to +85 °C Class 1A Bias Voltage & Current Vdd Range = +5.0 Vdc ± 10% Vdd (Vdc) +5.0 Idd (Typ.) (mA) 2.3 Idd (Max.) (mA) 5.0 TTL/CMOS Control Voltages State Low High Bias Condition 0 to +0.8 Vdc @