HMC349MS8GE

HMC349MS8G / 349MS8GE v02.0607 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Features High Isolation: 70 dB @ 1 GHz 57 dB @ 2 GHz Single Positive Control: 0/+5V +52 dBm Input IP3 Non-Reflective Design All Off State Ultra Small MS8G SMT Package: 14.8 mm2 Included in the HMC-DK005 Designer’s Kit Typical Applications The HMC349MS8G / HMC349MS8GE is ideal for: • Basestation Infrastructure • MMDS & 3.5 GHz WLL • CATV/CMTS • Test Instrumentation Functional Diagram General Description The HMC349MS8G & HMC349MS8GE are high isolation non-reflective DC to 4 GHz GaAs MESFET SPDT switches in low cost 8 lead MSOP8G surface mount packages with exposed ground paddles. The switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state. 10 SWITCHES - SMT Electrical Specifi cations, TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System Parameter Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz 0.5 - 2.0 GHz 0.5 - 3.0 GHz 0.5 - 4.0 GHz 0.25 - 4.0 GHz 0.25 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz DC - 4.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 40 120 ns ns 27 60 54 45 42 Min. Typ. 0.8 0.9 1.2 1.8 70 57 50 47 23 18 13 8 20 17 14 31 53 50 49 47 Max. 1.1 1.2 1.5 2.1 Units dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm Insertion Loss Isolation (RFC to RF1/RF2) Return Loss (On State) Return Loss (Off State) Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) Switching Speed 10 - 244 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC349MS8G / 349MS8GE v02.0607 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Insertion Loss 0 Return Loss 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 INSERTION LOSS (dB) -1 RFC RF1, RF2 ON RF1, RF2 OFF -2 +25C +85C -40C -3 -4 -5 0 1 2 3 4 5 FREQUENCY (GHz) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) Note: RFC is refl ective in “all off” state. 10 SWITCHES - SMT 10 - 245 Isolation Between Ports RFC and RF1 / RF2 0 Isolation Between Ports RF1 and RF2 0 -10 -20 ISOLATION (dB) ISOLATION (dB) 4 5 RF1 RF2 ALL OFF -20 -30 -40 -50 -60 -40 -60 -80 0 1 2 3 FREQUENCY (GHz) -70 0 1 2 3 4 5 FREQUENCY (GHz) 0.1 and 1 dB Input Compression Point 34 INPUT COMPRESSION (dBm) 32 Input Third Order Intercept Point 60 +25C +85C -40C 56 30 IP3 (dBm) 0.1 dB Compression Point 1 dB Compression Point 28 26 24 22 20 0 1 2 FREQUENCY (GHz) 3 4 52 48 44 40 0 1 2 FREQUENCY (GHz) 3 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC349MS8G / 349MS8GE v02.0607 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz Absolute Maximum Ratings RF Input Power (Vctl = 0V/+5V) (0.25 - 4 GHz) Supply Voltage Range (Vdd) Control Voltage Range (Vctl) Hot Switch Power Level (Vdd = +5V) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 12 mW/°C above 85 °C) Thermal Resistance Storage Temperature +30 dBm (T = +85 °C) +7 Vdc -1V to Vdd +1V +30 dBm 150 °C 0.75 W 87 °C/W -65 to +150 °C -40 to +85 °C Class 1A Bias Voltage & Current Vdd Range = +5.0 Vdc ± 10% Vdd (Vdc) +5.0 Idd (Typ.) (mA) 2.3 Idd (Max.) (mA) 5.0 TTL/CMOS Control Voltages State Low High Bias Condition 0 to +0.8 Vdc @