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HMC352MS8_01

HMC352MS8_01

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC352MS8_01 - GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 2.5 GHz - Hittite Microwave Corpora...

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC352MS8_01 数据手册
v00.0901 MICROWAVE CORPORATION HMC352MS8 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 2.5 GHz Features Integrated LO Amplifier w/ Pdiss < 20 mW Conversion Loss / Noise Figure: 7.0 dB Low LO Drive: 0 dBm Input IP3: >+13 dBm Single Positive Supply: 3V to 5V Typical Applications The HMC352MS8 is ideal for: • MMDS • PCMCIA • WirelessLAN • WCDMA Functional Diagram General Description The HMC352MS8 is a single balanced GaAs MMIC mixer with an integrated LO amplifier. This converter can operate as an upconverter and downconverter between 1.7 GHz and 2.5 GHz. With the integrated LO amplifier, the mixer requires an LO drive level of only 0 dBm, and requires only 6 mA from a single positive +3V rail. The mixer has 7 dB of conversion loss, an input P1dB of +5 dBm and an input third order intercept point of >+13 dBm at 2 GHz. 5 MIXERS - SMT Electrical Specifications, TA = +25° C Parameter Min. Frequency Range, RF & LO Frequency Range, I F Conversion Loss Noise Figure (SSB) LO to RF I s olation LO to I F I s olation RF to IF Isolation I P 3 (Input) 1 dB Compression (I n put) Supply Current (I d d) 9 7 10 10 -2 I F = 100 MHz LO= 0 dBm & Vdd= 3V Typ. 1.7 - 2.5 DC - 1.0 7 7 20 - 25 15 - 20 15 - 20 13 4 6 9.5 9.5 Units Max. GHz GHz dB dB dB dB dB dBm dBm mA * Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz. 5 - 270 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v00.0901 MICROWAVE CORPORATION HMC352MS8 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 2.5 GHz Conversion Gain vs. Temperature @ LO = 0 dBm 0 +25 C -40 C +85 C Isolation @ LO = 0 dBm 0 -5 -10 RF/IF LO/RF LO/IF CONVERSION GAIN (dB) -5 ISOLATION (dB) 1.8 2 2.2 2.4 2.6 2.8 -15 -20 -25 -30 -10 -15 -20 1.6 -35 1.6 1.8 2 2.2 2.4 2.6 2.8 FREQUENCY (GHz) FREQUENCY (GHz) 5 MIXERS - SMT Conversion Gain vs. LO Drive 0 Return Loss @ LO = 0 dBm 0 CONVERSION GAIN (dB) -10 LO = -6 dBm LO = -4 dBm LO = -2 dBm LO = 0 dBm LO = +2 dBm LO = +4 dBm RETURN LOSS (dB) -5 -5 -10 -15 -15 LO RF -20 1.6 -20 1.8 2 2.2 2.4 2.6 2.8 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Conversion Gain vs. Vdd @ LO = 0 dBm 0 +2.7V +3.0V +3.3V IF Bandwidth @ LO = 0 dBm 0 CONVERSION GAIN (dB) -5 -5 RESPONSE (dB) -10 -10 -15 -15 -20 CONVERSION GAIN RETURN LOSS -20 1.6 -25 1.8 2 2.2 2.4 2.6 2.8 0 0.2 0.4 0.6 0.8 1 1.2 FREQUENCY (GHz) IF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com 5 - 271 v00.0901 MICROWAVE CORPORATION HMC352MS8 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 2.5 GHz Upconverter Performance Conversion Gain @ LO = 0 dBm 0 Input P1dB vs. Temperature @ LO = 0 dBm 8 7 +25 C -40 C +85 C CONVERSION GAIN (dB) -5 6 INPUT P1dB (dBm) 1.8 2 2.2 2.4 2.6 2.8 5 4 3 2 1 -10 -15 5 MIXERS - SMT -20 1.6 0 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Input IP3 vs. LO Drive* 20 Input IP3 vs. Temperature @ LO = 0 dBm* 20 15 15 INPUT IP3 (dBm) 10 INPUT IP3 (dBm) 10 5 -2 dBm 0 dBm +2 dBm 5 +25 C -40 C +85 C 0 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 0 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Input IP3 vs. Vdd @ LO = 0 dBm* 20 Input P1dB vs. Vdd @ LO = 0 dBm 10 9 8 +2.7V +3.0V +3.3V 15 INPUT P1dB (dBm) +2.7V +3.0V +3.3V INPUT IP3 (dBm) 7 6 5 4 3 2 1 10 5 0 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 0 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) * Two-tone input power= -10 dBm each tone, 1 MHz spacing. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com 5 - 272 v00.0901 MICROWAVE CORPORATION HMC352MS8 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 2.5 GHz MxN Spurious @ IF Port nLO mRF 0 1 2 3 4 0 XX 10 35 69 >72 1 -8 0 47 68 >72 2 -2 25 53 70 >72 3 22 26 41 51 >72 4 23 36 45 62 >72 Harmonics of LO nLO Spur @ RF Por t LO Freq. (GHz) 1.75 1.9 2.05 2.2 2.35 2.5 1 10 12 18 34 26 21 2 3 4 8 18 30 20 3 16 19 20 19 23 25 4 23 27 41 32 31 32 RF = 2.0 GHz @ -10 dBm LO = 1.9 GHz @ 0 dBm All values in dBc relative to the IF power level. LO = 0 dBm All values in dBc below input LO level @ RF por t. 5 MIXERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com 5 - 273 v00.0901 MICROWAVE CORPORATION HMC352MS8 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 2.5 GHz Absolute Maximum Ratings RF / IF Input (Vdd = +3V) LO Drive (Vdd = +3V) Vdd IF DC Current Storage Temperature Operating Temperature +13 dBm +13 dBm 5.5V ± 3 mA -65 to +150 deg C -40 to +85 deg C 5 Pin Locations & Outline Drawing MIXERS - SMT 1. MATERIAL: A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC, SILICA & SILICONE IMPREGNATED. B. LEADFRAME MATERIAL: COPPER ALLOY 2. PLATING: LEAD-TIN SOLDER PLATE 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). UNLESS OTHERWISE SPECIFIED ALL TOL. ARE ±0.005 (±0.13). 4. CHARACTERS TO BE HELVETICA MEDIUM, APPROX. 030 HIGH, WHITE INK, LOCATED APPROXIMATELY AS SHOWN. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 mm PER SIDE. 5 - 274 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v00.0901 MICROWAVE CORPORATION HMC352MS8 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 2.5 GHz Pin Descriptions Pin Number 1 Function LO Por t Description LO Por t: This pin is AC coupled and matched to 50 ohm from 1.7 - 2.5 GHz Interface Schematic 2, 4, 6, 7 GND Ground: Pin must connect to RF ground. 5 MIXERS - SMT 5 - 275 3 Vdd Power supply for the LO Amplifier. Two external RF bypass capacitor (10 pF & 10,000 pF) are required. 5 IF Por t IF Por t: This pin is DC coupled. For applications not requiring operation to DC, this por t should be DC blocked externally using a series capacitor whose values has been chosen to pass the necessar y IF frequency range. For operation to DC, this pin must not source/sink more than 3mA of current or die non-function and possible die failure will result. 8 RF Por t RF Por t: This pin is AC coupled and matched to 50 ohm from 1.7 - 2.5 GHz. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v00.0901 MICROWAVE CORPORATION HMC352MS8 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 2.5 GHz Evaluation PCB for HMC352MS8 5 MIXERS - SMT The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. Evaluation Circuit Board Layout Design Details Item J1 - J4 C1 C2 R1 U1 PCB* Description PC Mount SMA RF Connector 10 pF Chip Capacitor, 0603 Pkg. .01 µF Chip Capacitor, 0603 Pkg. 0 Ohm Resistor, 0805 Pkg. HMC352MS8 Mixer 103928 Evaluation Board * Circuit Board Material: Rogers 4350 5 - 276 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v00.0901 MICROWAVE CORPORATION HMC352MS8 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 2.5 GHz HMC352MS8 Application Circuit 5 MIXERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com 5 - 277
HMC352MS8_01
物料型号: - HMC352MS8

器件简介: - HMC352MS8是一款集成了本振放大器的单平衡GaAs MMIC混频器。该器件可以在1.7 GHz至2.5 GHz之间作为上变频器和下变频器使用。集成的本振放大器使得混频器仅需要0 dBm的本振驱动电平,并且仅从单正+3V电源轨吸取6 mA电流。混频器具有7 dB的转换损耗,输入P1dB为+5 dBm,以及在2 GHz时输入三阶截取点大于+13 dBm。

引脚分配: - 1号引脚:本振端口(LO Port),交流耦合,1.7-2.5 GHz范围内匹配至50欧姆。 - 2、4、6、7号引脚:地(GND),必须连接到射频地。 - 3号引脚:正电压(Vdd WW),为本振放大器提供电源。需要两个外部射频旁路电容器(10 pF和10,000 pF)。 - 5号引脚:中频端口(IF Port),直流耦合。若应用不需要直流操作,则应使用外部串联电容器进行直流阻断。 - 8号引脚:射频端口(RF Port),交流耦合,1.7-2.5 GHz范围内匹配至50欧姆。

参数特性: - 频率范围:射频和本振1.7-2.5 GHz,中频直流至1.0 GHz。 - 转换损耗:7 dB。 - 噪声系数(单边带):7 dB。 - 本振至射频隔离:9 dB至25 dB。 - 本振至中频隔离:7 dB至20 dB。 - 射频至中频隔离:10 dB至20 dB。 - 输入三阶截取点(IP3):大于+13 dBm。 - 1 dB压缩点(输入):-2 dBm至4 dBm。 - 供电电流(Idd):6 mA。

功能详解: - HMC352MS8适用于MMDS、PCMCIA、无线局域网、WCDMA等应用。具有低本振功耗、低本振驱动电平、单正供电、高输入IP3等特点。

应用信息: - 该器件可用于多种无线通信应用,包括但不限于MMDS、PCMCIA、无线局域网和WCDMA。

封装信息: - 封装材料:A. 塑封体 - 低应力注塑塑料,浸渍硅和硅烷。B. 引线框架材料:铜合金。C. 镀层:铅锡焊层。 - 尺寸单位为英寸(毫米),除非另有说明,所有公差为±0.005(±0.13)。 - 标注字符为Helvetica Medium,大约0.030英寸高,白色油墨,位置大致如所示。 - 尺寸不包括每侧0.15 mm的模具闪光。 - 尺寸不包括每侧0.25 mm的模具闪光。
HMC352MS8_01 价格&库存

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