HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC374 / HMC374E is ideal for: • Cellular/PCS/3G • WCS, MMDS & ISM • Fixed Wireless & WLAN • Private Land Mobile Radio
Features
Single Supply: Vdd = +2.75 to +5.5V Low Noise Figure: 1.5 dB High Output IP3: +37 dBm No External Matching Required
Functional Diagram
General Description
The HMC374 & HMC374E are general purpose broad band Low Noise Amplifiers (LNA) for use in the 0.3 3 GHz frequency range. The LNA provides 15 dB of gain and a 1.5 dB noise figure from a single positive supply of +2.75 to +5.5V. The low noise figure coupled with a high P1dB (22 dBm) and high OIP3 (37 dBm) make this part ideal for cellular applications. The compact LNA design utilizes on-chip matching for repeatable gain and noise figure performance. To minimize board area the design is offered in a low cost SOT26 package that occupies only 0.118” x 0.118”.
Electrical Specifi cations, TA = +25° C, Vdd= +5V
Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd = +5V) 12 Min. Typ. 0.3 - 1.0 15 0.01 1.5 5 7 22 23 37 90 0.02 1.9 10 Max. Min. Typ. 1.0 - 2.0 13 0.01 1.6 8 9 22 23 37 90 0.02 2.0 6 Max. Min. Typ. 2.0 - 3.0 9 0.01 1.8 13 9 22 23 37 90 0.02 2.2 Max. Units GHz dB dB/°C dB dB dB dBm dBm dBm mA
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F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz
Broadband Gain & Return Loss
20 15
Gain vs. Temperature
20
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LOW NOISE AMPLIFIERS - SMT
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16 10 RESPONSE (dB) GAIN (dB) 5 0 -5 -10 4 -15 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 0 0.3
S21 S11 S22
12
8
+25C +85C -40C
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C +85C -40C
Output Return Loss vs. Temperature
0 -2 RETURN LOSS(dB) -4 -6 -8 -10 -12 0.3
+25C +85C -40C
-4 RETURN LOSS(dB)
-8
-12
-16
-20 0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature
5
Output IP3 vs. Temperature
40 39
4 NOISE FIGURE(dB) OIP3(dBm)
+25C +85C -40C
38 37
3
36 35 34 33
+25C +85C -40C
2
1
32 31
0 0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
30 0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
FREQUENCY (GHz)
FREQUENCY (GHz)
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz
8
LOW NOISE AMPLIFIERS - SMT
P1dB vs. Temperature
25 24 23 22 P1dB(dBm) 21 20 19 18 17 16 15 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
+25C +85C -40C
Psat vs. Temperature
25 24 23 22 Psat(dBm) 21 20 19 18 17 16 15 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
+25C +85C -40C
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 0.3
+25C +85C -40C
Power Compression @ 2 GHz
35 Pout (dBm), Gain (dB), PAE (%) 30 25 20 15 10 5 0 -5 -20
Pout Gain PAE
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
-15
-10
-5
0
5
10
15
FREQUENCY (GHz)
INPUT POWER (dBm)
Gain, Noise Figure & Power vs. Supply Voltage @ 2 GHz
25 23 GAIN (dB), P1dB (dBm) 21 19 17 15 13 11 9 2.7 3.1 3.5 3.9 4.3 4.7 5.1
Gain P1dB
Current vs. Power @ 2 GHz
8 7 6
100 Idd (mA) 98 96 94 92 90 -20 104 102
NOISE FIGURE (dB)
5 4 3 2 1 0 5.5
Noise Figure
-15
-10
-5
0
5
10
15
Vdd (Vdc)
INPUT POWER (dBm)
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F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 7.5 mW/°C above 85 °C) Thermal Resistance (channel to lead) Storage Temperature Operating Temperature +7.0 Vdc 15 dBm 150 °C 0.488 W 133 °C/W -65 to +150 °C -40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V) 2.7 3.0 5.0 5.5 Idd (mA) 89 89 90 90
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LOW NOISE AMPLIFIERS - SMT
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ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number HMC374 HMC374E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1
[1]
Package Marking [3] H374 XXXX 374E XXXX
[2]
[1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz
8
LOW NOISE AMPLIFIERS - SMT
Pin Descriptions
Pin Number Function Description These pins may be connected to RF/DC ground. Performance will not be affected. Interface Schematic
1,4
N/C
2, 5
GND
These pins must be connected to RF/DC ground.
3
IN
This pin is DC coupled. An off-chip DC blocking capacitor is required. RF output and DC Bias for the output stage. See application circuit for off-chip components.
6
OUT
Application Circuit
Recommended Component Values C1, C2 C3 C4 L1 150 pF 1,000 pF 4.7 μF 27 nH
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F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz
Evaluation PCB
8
LOW NOISE AMPLIFIERS - SMT
List of Materials for Evaluation PCB 109258 [1]
Item J1, J2 J3, J4 C1, C2 C3 C4 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 150 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 4.7 Capacitor, Tantalum 27 nH Inductor, 0603 Pkg. HMC374 / HMC374E Amplifier 109256 Evaluation PCB
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown above. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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