HMC375LP3

HMC375LP3 / 375LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7 AMPLIFIERS - LOW NOISE - SMT Typical Applications The HMC375LP3 / HMC375LP3E is ideal for basestation receivers: • GSM, GPRS & EDGE • CDMA & W-CDMA • DECT Features Noise Figure: 0.9 dB Output IP3: +34 dBm Gain: 17 dB Very Stable Gain vs. Supply & Temperature Single Supply: +5V @ 136 mA 50 Ohm Matched Output Functional Diagram General Description The HMC375LP3 & HMC375LP3E high dynamic range GaAs PHEMT MMIC Low Noise Amplifiers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise figure, 17 dB gain and +33 dBm output IP3 from a single supply of +5V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. For applications which require improved noise figure, please see the HMC618LP3(E). Electrical Specifi cations, TA = +25° C, Vs = +5V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 16 16.5 Min. Typ. 1.8 - 1.9 18.5 0.014 1.0 12 13 35 18.5 19.5 34 136 16 0.021 1.35 15.5 Max. Min. Typ. 1.9 - 2.0 17.5 0.014 0.95 13 16 34 18.5 19.5 33.5 136 15 0.021 1.2 15 Max. Min. Typ. 2.0 - 2.1 17 0.014 0.9 14 11 34 18 19.5 33 136 14.5 0.021 1.2 13 Max. Min. Typ. 2.1 - 2.2 15 0.014 0.9 15 8 34 17.5 19.5 32.5 136 0.021 1.3 Max. Units GHz dB dB/°C dB dB dB dB dBm dBm dBm mA 7 - 74 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC375LP3 / 375LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain & Return Loss 25 15 5 -5 -15 -25 -35 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 S21 S11 S22 Noise Figure vs. Temperature 1.5 +25 C +85 C -40 C 7 AMPLIFIERS - LOW NOISE - SMT 7 - 75 1.3 NOISE FIGURE (dB) RESPONSE (dB) 1.1 0.9 0.7 0.5 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 Gain vs. Temperature 24 22 Noise Figure vs. Vdd 1.5 +4.5 V +5.0 V +5.5 V 1.3 20 GAIN (dB) 18 16 14 12 10 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 0.5 1.7 1.8 +25 C +85 C -40 C NOISE FIGURE (dB) 1.1 0.9 0.7 1.9 2 FREQUENCY (GHz) 2.1 2.2 Gain vs. Vdd 22 Reverse Isolation vs. Temperature -15 -20 20 ISOLATION (dB) -25 -30 -35 -40 -45 -50 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 +25 C +85 C -40 C GAIN (dB) 18 16 +4.5 V +5.0 V +5.5 V 14 12 1.7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC375LP3 / 375LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7 AMPLIFIERS - LOW NOISE - SMT Input Return Loss vs. Temperature 0 +25 C -40 C +85 C Output Return Loss vs. Temperature 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 2.1 2.2 -10 -10 -15 -15 -20 -20 -25 1.7 1.8 1.9 2 FREQUENCY (GHz) -25 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 Output IP3 vs. Temperature 40 +25 C +85 C -40 C P1dB & PSAT vs. Temperature 24 PSAT +25 C +85 C -40 C 36 COMPRESSION (dBm) 38 22 IP3 (dBm) 20 34 18 32 16 P1dB 30 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 14 1.7 1.8 1.9 2 2.1 2.2 FREQUENCY (GHz) Output IP3 vs. Vdd 40 +4.5 V +5.0 V +5.5 V P1dB vs. Vdd 24 22 OUTPUT P1dB (dBm) 20 18 16 14 12 38 IP3 (dBm) 36 34 32 +4.5 V +5.0 V +5.5 V 30 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 7 - 76 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC375LP3 / 375LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2) RF Input Power (RFIN)(Vs = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 15.6 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +8.0 Vdc +10 dBm 150 °C 1.015 W 64.1 °C/W -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 135 136 137 7 AMPLIFIERS - LOW NOISE - SMT 7 - 77 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC375LP3 HMC375LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 375 XXXX 375 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC375LP3 / 375LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7 AMPLIFIERS - LOW NOISE - SMT Pin Descriptions Pin Number 1, 3, 4, 6-10, 12, 14, 16 2 Function N/C RFIN Description No connection necessary. These pins may be connected to RF/DC ground. This pin is matched to 50 Ohms with a 13 nH inductor to ground. See Application Circuit. Interface Schematic 5 ACG AC Ground - An external capacitor of 0.01μF to ground is required for low frequency bypassing. See Application Circuit for further details. 11 RFOUT This pin is AC coupled and matched to 50 Ohms. 13,15 Vdd2, Vdd1 Power supply voltage. Choke inductor and bypass capacitor are required. See application circuit. GND Package bottom must be connected to RF/DC ground. Application Circuit Note: L1, L2, L3 and C1 should be located as close to pins as possible. 7 - 78 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC375LP3 / 375LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Evaluation PCB 7 AMPLIFIERS - LOW NOISE - SMT List of Materials for Evaluation PCB 107726 [1] Item J1 - J2 J3 - J4 C1 C2, C3 L1 L2 L3 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 1000 pF Capacitor, 0402 Pkg. 10000 pF Capacitor, 0603 Pkg. 13nH Inductor, 0402 Pkg. 33nH Inductor, 0603 Pkg. 24nH Inductor, 0402 Pkg. HMC375LP3 / HMC375LP3E Amplifier 107514 Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 79