HMC376LP3_10

HMC376LP3 / 376LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz 7 AMPLIFIERS - LOW NOISE - SMT Typical Applications The HMC376LP3 / HMC376LP3E is ideal for: • Cellular/3G Infrastructure • Base Stations & Repeaters • CDMA, W-CDMA, & TD-SCDMA • Private Land Mobile Radio • GSM/GPRS & EDGE • UHF Reallocation Applications Features Noise Figure: 0.7 dB Output IP3: +36 dBm Gain: 15 dB Externally Adjustable Supply Current Single Positive Supply: +5V 50 Ohm Matched Input/Output Functional Diagram General Description The HMC376LP3 & HMC376LP3E are GaAs PHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 0.7 dB noise figure, 15 dB gain and +36 dBm output IP3 from a single supply of +5V. The HMC376LP3(E) feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise figure, please see the HMC617LP3(E). Electrical Specifi cations, TA = +25° C, Vdd = +5V, Rbias = 10 Ohms* Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) *Rbias resistor value sets current, see application circuit herein. 12.5 Min. Typ. 810 - 960 14.5 0.005 0.7 13 12 20 21.5 22 36 73 0.01 1.0 11.5 Max. Min. Typ. 700 - 1000 14.5 0.005 0.7 14 12 22 21 22 36 73 0.01 1.0 Max. Units MHz dB dB / °C dB dB dB dB dBm dBm dBm mA 7-1 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC376LP3 / 376LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Broadband Gain & Return Loss 25 Gain vs. Temperature 20 +25C +85C - 40C 7 AMPLIFIERS - LOW NOISE - SMT 7-2 15 RESPONSE (dB) 18 5 S21 S11 S22 GAIN (dB) 1.75 2 16 -5 14 -15 12 -25 0.25 0.5 0.75 1 1.25 1.5 FREQUENCY (GHz) 10 0.6 0.7 0.8 0.9 FREQUENCY (GHz) 1 1.1 Input Return Loss vs. Temperature 0 +25 C +85 C -40 C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) -10 -10 -15 -15 +25 C +85 C -40 C -20 -20 -25 0.6 0.7 0.8 0.9 FREQUENCY (GHz) 1 1.1 -25 0.6 0.7 0.8 0.9 FREQUENCY (GHz) 1 1.1 Reverse Isolation vs. Temperature 0 Noise Figure vs. Temperature 1.6 -5 +25 C +85 C -40 C -10 NOISE FIGURE (dB) 1.2 ISOLATION (dB) +25 C +85 C -40 C 0.8 -15 -20 0.4 -25 0.6 0.7 0.8 0.9 FREQUENCY (GHz) 1 1.1 0 0.6 0.7 0.8 0.9 FREQUENCY (GHz) 1 1.1 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC376LP3 / 376LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz 7 AMPLIFIERS - LOW NOISE - SMT P1dB vs. Temperature @ Idd = 73 mA 25 Psat vs. Temperature @ Idd = 73 mA 25 23 P1dB (dBm) Psat (dBm) 23 21 +25 C +85 C -40 C 21 +25 C +85 C -40 C 19 19 17 17 15 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 15 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 Output IP3 vs. Temperature @ Idd = 73 mA 40 Gain, Noise Figure & Power vs. Supply Current @ 900 MHz 24 22 GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) 20 18 16 14 12 60 0.4 70 80 90 100 110 120 GAIN P1dB Noise figure 1 38 0.8 IP3 (dBm) 36 34 +25 C +85 C -40 C 0.6 32 30 0.7 0.75 0.8 0.85 0.9 0.95 1 FREQUENCY (GHz) SUPPLY CURRENT (mA) Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vs = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 11.83 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +8.0 Vdc +15 dBm 150 °C 0.769 W 84.5 °C/W -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd with Rbias = 10 Ohms Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 73.0 73.4 73.6 Recommended Bias Resistor Values for Various Idd Idd (mA) 60 70 Rbias (Ohms) 12 10 9.1 6.8 5.1 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 80 100 120 7-3 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC376LP3 / 376LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Outline Drawing 7 AMPLIFIERS - LOW NOISE - SMT Package Marking [3] H376 XXXX H376 XXXX [1] [2] NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC376LP3 HMC376LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7-4 HMC376LP3 / 376LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz 7 AMPLIFIERS - LOW NOISE - SMT Pin Descriptions Pin Number 1, 4, 5, 7, 9, 12 - 14, 16 Function N/C Description No connection necessary. These pins may be connected to RF/DC ground. Performance will not be affected. Interface Schematic 2 RFIN This pin is matched to 50 Ohms with a 47 nH inductor to ground. See application circuit. 3, 6, 10 GND These pins and package bottom must be connected to RF/DC ground. 8 Res This pin is used to set the DC current of the amplifier by selection of external bias resistor. See application circuit. 11 RFOUT This pin is AC coupled and matched to 50 Ohms from 0.7 - 1.0 GHz. 15 Vdd Power supply voltage. Choke inductor and bypass capacitors are required. See application circuit. Application Circuit Note 1: L1, L2 and C1 should be located as close to the pins as possible. 7-5 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC376LP3 / 376LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Evaluation PCB 7 AMPLIFIERS - LOW NOISE - SMT List of Materials for Evaluation PCB 112585 [1] Item J1 - J2 J3 - J4 C1 C2 C3 L1 L2 R1 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 1000 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 15000 pF Capacitor, 0603 Pkg. 18 nH Inductor, 0603 Pkg. 47 nH Inductor, 0603 Pkg. Resistor, 0402 Pkg. HMC376LP3 / HMC376LP3E Amplifier 112580 Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7-6