HMC383LC4_08

HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Typical Applications The HMC383LC4 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment & Sensors Features Gain: 15 dB Saturated Output Power: +18 dBm Output IP3: +25 dBm Single Positive Supply: +5V @ 100 mA 50 Ohm Matched Input/Output RoHS Compliant 4x4 mm Package 11 • LO Driver for HMC Mixers • Military & Space Functional Diagram General Description The HMC383LC4 is a general purpose GaAs PHEMT MMIC Driver Amplifier housed in a leadless RoHS compliant SMT package. The amplifier provides 15 dB of gain and +18 dBm of saturated power from a single +5V supply. Consistent gain and output power across the operating band make it possible to use a common driver/LO amplifier approach in multiple radio bands. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC383LC4 is housed in a RoHS compliant leadless 4x4 mm package allowing the use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd = +5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 75 12 12 Min. Typ. 12 - 16 15 0.02 14 14 15 17 24 10.5 100 135 75 13.5 0.03 13 Max. Min. Typ. 16 -24 16 0.02 14 17 16.5 18 25 8 100 135 75 13 0.03 12 Max. Min. Typ. 24 - 28 15 0.02 11 10 16 17 25 7.5 100 135 75 12 0.03 10 Max. Min. Typ. 28 - 30 13 0.02 13 8 15 16 23 8 100 135 0.03 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA 11 - 16 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Broadband Gain & Return Loss 20 Gain vs. Temperature 20 16 10 RESPONSE (dB) GAIN (dB) 12 0 S21 S11 S22 8 +25C +85C -40C -10 11 26 28 30 4 -20 8 12 16 20 24 28 32 FREQUENCY (GHz) 0 12 14 16 18 20 22 24 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 +25C +85C -40C -5 +25C +85C -40C -10 -15 -15 -20 12 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) -20 12 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) P1dB vs. Temperature 22 20 18 16 P1dB (dBm) Psat vs. Temperature 22 20 18 16 Psat (dBm) 14 12 10 8 6 4 2 0 +25C +85C -40C 14 12 10 8 6 4 2 0 12 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) +25C +85C -40C 12 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 17 LINEAR & POWER AMPLIFIERS - SMT HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Power Compression @ 18 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 18 16 14 12 10 8 6 4 2 0 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Pout (dBm) Gain (dB) PAE (%) Power Compression @ 30 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 18 16 14 12 10 8 6 4 2 0 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Pout (dBm) Gain (dB) PAE (%) 11 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 30 Noise Figure vs. Temperature 13 12 11 10 9 8 7 6 5 4 3 2 1 0 12 14 16 18 20 22 26 NOISE FIGURE (dB) IP3 (dBm) 22 +25C +85C -40C 18 14 +25C +85C -40C 10 12 15 18 21 24 27 30 FREQUENCY (GHz) 24 26 28 30 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 18 GHz 19 GAIN (dB), P1dB (dBm), Psat (dBm) Reverse Isolation vs. Temperature 0 -10 18 ISOLATION (dB) -20 -30 -40 -50 15 Gain P1dB Psat +25C +85C -40C 17 16 -60 -70 14 4.5 5 Vdd Supply Voltage (Vdc) 5.5 12 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) 11 - 18 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Typical Supply Current vs. Vdd Vdd (V) +4.5 +5.0 +5.5 Idd (mA) 99 100 101 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +5Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 10 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +5.5 Vdc +10 dBm 175 °C 0.92 W 98 °C/W -65 to +150 °C -40 to +85 °C Note: Amplifi er will operate over full voltage ranges shown above 11 LINEAR & POWER AMPLIFIERS - SMT NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. ALL DIMENSIONS ARE IN INCHES [MM] 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 19 HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Pin Descriptions Pin Number 1, 2, 4-15, 17, 18, 20-24 Function N/C Description No connection required. These pins may be connected to RF/DC ground without affecting performance if using grounded coplanar wave guide transmission lines. This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. Interface Schematic 3 RFIN 11 16 RFOUT 19 Vdd Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 μF are required. GND Package base has an exposed metal ground that must be connected to RF/DC ground. Vias under the device are required Application Circuit Component C1 C2 C3 Value 100 pF 1,000 pF 2.2 μF 11 - 20 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 21 List of Materials for Evaluation PCB 122198 [1] Item J1, J2 J3, J4 C1 C2 C3 U1 PCB [2] Description 2.92 mm PCB mount K-connector DC Pin 100 pF capacitor, 0402 pkg. 1,000 pF Capacitor, 0603 pkg. 2.2μF Capacitor, Tantalum HMC383LC4 Amplifier 108535 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com