HMC383_09

HMC383 v02.0907 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Typical Applications The HMC383 is ideal for use as a driver amplifier for: • Point-to-Point Radios Features Gain: 16 dB Saturated Output Power: +18 dBm Output IP3: +25 dBm Single Positive Supply: +5V @ 101 mA 50 Ohm Matched Input/Output Die Size: 2.26 x 1.35 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios & VSAT • Test Equipment & Sensors • LO Driver for HMC Mixers • Military & Space Functional Diagram General Description The HMC383 is a general purpose GaAs PHEMT MMIC Driver Amplifier which operates between 12 and 30 GHz. The amplifier provides 16 dB of gain and +18 dBm of saturated power from a +5V supply. Consistent gain and output power across the operating band make it possible to use a common driver/LO amplifier approach in multiple radio bands. The HMC383 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its compact size, single supply operation, and DC blocked RF I/Os. All data is measured with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd = +5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 12 13 Min. Typ. 12 - 18 16 0.03 14 13 15 18 25 9 101 125 13.5 0.04 14 Max. Min. Typ. 18 - 24 17 0.03 12 12 16.5 18 25 7 101 125 13 0.04 13 Max. Min. Typ. 24 - 28 16 0.03 14 7 16 17 24 6.5 101 125 13 0.04 12 Max. Min. Typ. 28 - 30 15 0.03 7 5 16 18 23 7.5 101 125 0.04 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA 3-2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383 v02.0907 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Broadband Gain & Return Loss 20 15 Gain vs. Temperature 20 16 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 8 12 16 20 24 28 32 36 FREQUENCY (GHz) 0 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) S21 S11 S22 GAIN (dB) 12 3 -55C 8 4 Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25C +85C -55C RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 +25C +85C -55C -5 -10 -15 -15 -20 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) -20 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) P1dB vs. Temperature 22 20 18 16 P1dB (dBm) 12 10 8 6 4 2 0 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) +25C +85C -55C Psat vs. Temperature 22 20 18 16 Psat (dBm) 14 12 10 8 6 4 2 0 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) +25C +85C -55C 14 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-3 LINEAR & POWER AMPLIFIERS - CHIP +25C +85C HMC383 v02.0907 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Power Compression @ 18 GHz 20 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 30 GHz 20 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm) Gain (dB) PAE (%) 16 Pout (dBm) Gain (dB) PAE (%) 16 3 LINEAR & POWER AMPLIFIERS - CHIP 12 12 8 8 4 4 0 -18 -14 -10 -6 -2 2 6 0 -14 -10 -6 -2 2 6 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 30 Noise Figure vs. Temperature 12 10 NOISE FIGURE (dB) 8 6 4 2 0 +25C +85C -55C 26 IP3 (dBm) 22 +25C +85C -55C 18 14 10 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) 10 14 18 22 26 30 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 18 GHz 20 GAIN (dB), P1dB (dBm), Psat (dBm) 19 Reverse Isolation vs. Temperature 0 -20 18 17 16 15 14 4.5 Gain P1dB Psat ISOLATION (dB) -40 +25C +85C -55C -60 -80 5 Vdd Supply Voltage (V) 5.5 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) 3-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383 v02.0907 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Typical Supply Current vs. Vdd Vdd (V) +4.5 +5.0 +5.5 Idd (mA) 100 101 102 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 9.9 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +5.5 Vdc +10 dBm 175 °C 0.89 W 101.0 °C/W -65 to +150 °C -55 to +85 °C Class 1A Note: Amplifi er will operate over full voltage ranges shown above 3 LINEAR & POWER AMPLIFIERS - CHIP 3-5 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383 v02.0907 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 3 2 Vdd LINEAR & POWER AMPLIFIERS - CHIP Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 3 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. Assembly Diagram 3-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383 v02.0907 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be mounted as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible