HMC385LP4E

HMC385LP4E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC385LP4E - MMIC VCO w/ BUFFER AMPLIFIER, 2.25 - 2.5 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC385LP4E 数据手册
HMC385LP4 / 385LP4E v02.0705 MMIC VCO w/ BUFFER AMPLIFIER, 2.25 - 2.5 GHz Features Pout: +4.5 dBm Phase Noise: -115 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 35 mA QFN Leadless SMT Package, 16 mm2 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • Wireless Infrastructure • Industrial Controls • Test Equipment • Military Functional Diagram General Description The HMC385LP4 & HMC385LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 2.25 to 2.5 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 35mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package. 11 VCOS & PLOs - SMT Electrical Specifi cations, TA = +25° C, Vcc = +3V Parameter Frequency Range Power Output SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune Voltage (Vtune) Supply Current (Icc) (Vcc = +3.0V) Tune Port Leakage Current Output Return Loss Harmonics 2nd 3rd Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= +5V Frequency Drift Rate 9 -7 -23 2.0 -2 0.25 0 35 10 1.5 Min. Typ. 2.25 - 2.5 4.5 -115 10 Max. Units GHz dBm dBc/Hz V mA μA dB dBc dBc MHz pp MHz/V MHz/°C 11 - 14 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC385LP4 / 385LP4E v02.0705 MMIC VCO w/ BUFFER AMPLIFIER, 2.25 - 2.5 GHz Frequency vs. Tuning Voltage, Vcc= +3V 2.6 OUTPUT FREQUENCY (GHz) 2.5 2.4 2.3 2.2 2.1 2 +25 C +85 C -40 C Frequency vs. Tuning Voltage, T= 25°C 2.6 OUTPUT FREQUENCY (GHz) 2.5 2.4 2.3 2.2 2.1 2 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) Vcc=2.75V Vcc=3.0V Vcc=3.25V 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) 11 VCOS & PLOs - SMT 11 - 15 Sensitivity vs. Tuning Voltage, Vcc= +3V 180 160 SENSITIVITY (MHz/VOLT) 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) +25 C +85 C -40 C Output Power vs. Tuning Voltage, Vcc= +3V 8 7 OUTPUT POWER (dBm) 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) +25 C +85 C -40 C Phase Noise vs. Tuning Voltage -80 SSB PHASE NOISE (dBc/Hz) -85 Typical SSB Phase Noise @ Vtune= +5V 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 3 10 SSB PHASE NOISE (dBc/Hz) -90 -95 -100 -105 -110 -115 -120 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) 10 KHz Offset 100 KHz Offset +25 C +85 C -40 C 10 4 10 5 10 6 10 7 OFFSET FREQUENCY (Hz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC385LP4 / 385LP4E v02.0705 MMIC VCO w/ BUFFER AMPLIFIER, 2.25 - 2.5 GHz Typical Supply Current vs. Vcc Vcc (V) 2.75 3.0 3.25 Icc (mA) 28 35 41 Absolute Maximum Ratings Vcc Vtune Channel Temperature Continuous Pdiss (T = 85°C) (derate 6.28 mW/°C above 85°C) Storage Temperature Operating Temperature +3.5 Vdc 0 to +11V 135 °C 565 W -65 to +150 °C -40 to +85 °C Note: VCO will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 VCOS & PLOs - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN Package Information Part Number HMC385LP4 HMC385LP4E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H385 XXXX H385 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 16 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC385LP4 / 385LP4E v02.0705 MMIC VCO w/ BUFFER AMPLIFIER, 2.25 - 2.5 GHz Pin Descriptions Pin Number 1- 14, 17 - 19, 21, 23, 24 Function N/C Description No Connection Interface Schematic 15 GND This pin must be connected to RF & DC ground. 16 RFOUT RF output (AC coupled) 20 Vcc Supply Voltage Vcc= 3V 11 VCOS & PLOs - SMT 11 - 17 22 VTUNE Control Voltage Input. Modulation port bandwidth dependent on drive source impedance. GND Package bottom has an exposed metal paddle that must be RF & DC grounded. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC385LP4 / 385LP4E v02.0705 MMIC VCO w/ BUFFER AMPLIFIER, 2.25 - 2.5 GHz Evaluation PCB 11 VCOS & PLOs - SMT List of Materials for Evaluation PCB 105706 [1] Item J1 - J2 J3 - J4 C1 C2 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 4.7 μF Tantalum Capacitor 10,000 pF Capacitor, 0603 Pkg. HMC385LP4 / HMC385LP4E VCO 105667 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. 11 - 18 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC385LP4 / 385LP4E v02.0705 MMIC VCO w/ BUFFER AMPLIFIER, 2.25 - 2.5 GHz Notes: 11 VCOS & PLOs - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 19
HMC385LP4E
1. 物料型号: - HMC385LP4 / 385LP4E

2. 器件简介: - HMC385LP4和HMC385LP4E是基于砷化镓(GaAs)异质结双极晶体管(HBT)技术的单片微波集成电路(MMIC)压控振荡器(VCO),集成了谐振器、负阻抗器件、变容二极管和缓冲放大器。这些VCO覆盖了2.25至2.5GHz的频率范围,具有优异的相位噪声性能,能够在温度、冲击、振动和工艺变化下保持稳定。它们通常从3V单电源提供4.5dBm的功率输出,并采用低成本的无引线QFN 4x4mm表面贴装封装。

3. 引脚分配: - 1-14, 17-19, 21, 23, 24:无连接(N/C) - 15:GND(必须连接到射频和直流地) - 16:RFOUT(射频输出,交流耦合) - 20:Vcc(供电电压,3V) - 22:VTUNE(控制电压输入,调制端口带宽取决于驱动源阻抗) - GND:封装底部的暴露金属垫必须射频和直流接地

4. 参数特性: - 频率范围:2.25-2.5GHz - 功率输出:1.5dBm至4.5dBm - 相位噪声:在100kHz偏移处,Vtune=+5V时为-115dBc/Hz - 调谐电压(Vtune):0至10V - 供电电流(Icc):在+3.0V供电时为35mA - 调谐端口漏电流:小于10微安 - 输出回波损耗:大于9dB - 谐波:二次谐波-7dBc,三次谐波-23dBc - 拉频:在2.0:1驻波比下为2.0MHz峰峰值 - 推频:在Vtune=+5V时为-2MHz/V - 频率漂移率:0.25MHz/°C

5. 功能详解: - 这些VCO设计用于无线基础设施、工业控制、测试设备和军事应用。它们不需要外部谐振器,并且具有单电源供电和QFN无引线表面贴装封装。

6. 应用信息: - 适用于需要2.25至2.5GHz频率范围的应用,如无线基础设施、工业控制、测试设备和军事领域。

7. 封装信息: - HMC385LP4:低应力注塑塑料封装,Sn/Pb焊料,MSL等级1 - HMC385LP4E:符合RoHS的低应力注塑塑料封装,100%亚光Sn,MSL等级1
HMC385LP4E 价格&库存

很抱歉,暂时无法提供与“HMC385LP4E”相匹配的价格&库存,您可以联系我们找货

免费人工找货