HMC396

HMC396 v01.1007 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP Typical Applications An excellent cascadable 50 Ohm Gain Block or LO Driver for: • Microwave & VSAT Radios • Test Equipment • Military EW, ECM, C3I • Space Telecom Features Gain: 12 dB P1dB Output Power: +14 dBm Stable Gain Over Temperature 50 Ohm I/O’s Small Size: 0.38 x 0.58 x 0.1 mm Functional Diagram General Description The HMC396 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 8 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16 dBm output power. The HMC396 offers 12 dB of gain and an output IP3 of +30 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC396 can easily be integrated into Multi-ChipModules (MCMs) due to its small (0.22mm2) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils). Electrical Specifi cations, Vs= +5.0V, Rbias= 22 Ohm, TA = +25° C Parameter Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) DC - 4.0 GHz 4.0 - 8.0 GHz DC - 4.0 GHz 4.0 - 8.0 GHz DC - 4.0 GHz 4.0 - 8.0 GHz DC - 4.0 GHz 4.0 - 8.0 GHz DC - 8.0 GHz DC - 4.0 GHz 4.0 - 8.0 GHz DC - 4.0 GHz 4.0 - 8.0 GHz DC - 8.0 GHz Min. Typ. 12 11 0.004 0.015 15 12 19 17 16 14 13 30 24 6 56 Max. Units dB dB dB/ °C dB/ °C dB dB dB dB dB dBm dBm dBm dBm dB mA Note: Data taken with broadband bias tee on device output. 2-8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC396 v01.1007 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Gain & Return Loss 15 10 5 RESPONSE (dB) S21 S11 S22 Gain vs. Temperature 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2-9 -5 -10 -15 -20 -25 0 1 2 3 4 5 GAIN (dB) 0 +25C +85C -55C 6 7 8 9 10 6 7 8 9 10 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -55C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) +25C +85C -55C -10 -10 -15 -15 -20 -20 -25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) -25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) Noise Figure vs. Temperature 10 9 -5 NOISE FIGURE (dB) +25 C +85 C -55 C 8 7 6 5 4 3 2 1 +25C +85C -55C -10 -15 -20 -25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC396 v01.1007 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP P1dB vs. Temperature 20 18 16 14 P1dB (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) +25C +85C -55C Psat vs. Temperature 20 18 16 14 Psat (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) +25C +85C -55C Power Compression @ 1 GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 8 GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE Pout Gain PAE (%) 0 2 4 6 8 10 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 34 32 30 28 26 IP3 (dBm) 24 22 20 18 16 14 12 10 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) +25C +85C -55C Gain, Power, OIP3 & Supply Current vs. Supply Voltage @ 1 GHz GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 40 35 30 25 20 15 10 5 0 4.5 4.75 5 Vs(Vdc) 5.25 Gain P1dB Psat IP3 Icq 80 60 Icq (mA) 40 20 0 5.5 2 - 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC396 v01.1007 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFIN)(Vcc = +5.0 Vdc) Junction Temperature Continuous Pdiss (T= 85 °C) (derate 5.21 mW/°C above 85 °C) Thermal Resistance (junction to die bottom) Storage Temperature Operating Temperature +7 Vdc +10 dBm 150 °C 0.339 W 192 °C/W -65 to +150 °C -55 to +85 °C 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 - 11 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD Die Packaging Information [1] Standard GP-3 Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC396 v01.1007 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP Pad Descriptions Pad Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 2 RFOUT RF output and DC Bias for the output stage. Die Bottom GND Die bottom must be connected to RF/DC ground. Application Circuit Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.9 Rbias Recommended Component Values Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 μF 1000 56 nH 100 pF 4000 8.2 nH 100 pF 8000 2.2 nH 100 pF 2 - 12 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC396 v01.1007 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Assembly Diagram 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 - 13 Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and fl at. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible