HMC397

v00.1002 MICROWAVE CORPORATION HMC397 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10.0 GHz Features Gain: 15 dB P1dB Output Power: +15 dBm Stable Gain Over Temperature 50 Ohm I/O’s Small Size: 0.38 mm x 0.58 mm x 0.1 mm 1 AMPLIFIERS - CHIP Typical Applications An excellent cascadable 50 Ohm Gain Block or LO Driver for: • Microwave & VSAT Radios • Test Equipment • Military EW, ECM, C3I • Space Telecom Functional Diagram General Description The HMC397 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 10 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16dBm output power. The HMC397 offers 15 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC397 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm2) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils). Electrical Specifications, Vs= +5.0V, Rbias= 22 Ohm, TA = +25° C Parameter Gain DC - 3.0 GHz 3.0 - 7.0 GHz 7.0 - 10.0 GHz DC - 3.0 GHz 3.0 - 7.0 GHz 7.0 - 10.0 GHz DC - 3.0 GHz 3.0 - 10.0 GHz DC - 3.0 GHz 3.0 - 10.0 GHz DC - 7.0 GHz 7.0 - 10.0 GHz DC - 3.0 GHz 3.0 - 7.0 GHz 7.0 - 10.0 GHz DC - 3.0 GHz 3.0 - 7.0 GHz 7.0 - 10.0 GHz DC - 7.0 GHz 7.0 - 10.0 GHz Min. Typ. 15 14 12 0.004 0.015 0.02 15 14 15 13 18 16 15 13 10 30 24 22 4.5 6 56 Max. Units dB dB dB dB/ °C dB/ °C dB/ °C dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dB dB mA Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 1 - 48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.1002 MICROWAVE CORPORATION HMC397 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10.0 GHz GaAs MMIC PUMPED MIXER Gain & Return LossSUB-HARMONICALLY Gain vs. Temperature 20 15 10 RESPONSE (dB) GAIN (dB) 17 - 25 GHz 5 0 -5 -10 -15 -20 0 1 2 S21 S11 S22 +25C +85C -55C 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) +25C +85C -55C INPUT RETURN LOSS (dB) -5 +85C -55C -5 -10 -10 -15 -15 -20 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) -20 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 +25C +85C -55C Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) -5 7 6 5 4 3 2 1 +25C +85C -55C -10 -15 -20 -25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 49 AMPLIFIERS - CHIP 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 1 v00.1002 MICROWAVE CORPORATION HMC397 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10.0 GHz 1 AMPLIFIERS - CHIP GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature PUMPED MIXER P1dB vs. Temperature 20 18 16 14 P1dB (dBm) Psat (dBm) 17 - 25 GHz 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -55C 12 10 8 6 4 2 0 +25C +85C -55C Power Compression @ 1 GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 7 GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE Pout Gain PAE -6 -4 -2 0 2 4 6 8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 34 32 30 28 26 IP3 (dBm) Gain, Power, OIP3 & Supply Current vs. Supply Voltage @ 1 GHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 40 35 30 25 80 60 24 22 20 18 16 14 12 10 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) +25C +85C -55C Icq (mA) 20 15 10 5 0 4.5 4.75 5 Vs(Vdc) 5.25 Icq 40 20 Gain P1dB Psat OIP3 0 5.5 1 - 50 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.1002 MICROWAVE CORPORATION HMC397 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10.0 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +5.0 Vdc) Junction Temperature Continuous Pdiss (T= 85 °C) (derate 5.21 mW/°C above 85 °C) Thermal Resistance (junction to die bottom) Storage Temperature Operating Temperature +7.0 Vdc +10 dBm 150 °C 0.339 W 1 AMPLIFIERS - CHIP NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD 192 °C/W -65 to +150 °C -55 to +85 °C Outline Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 51 v00.1002 MICROWAVE CORPORATION HMC397 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10.0 GHz 1 AMPLIFIERS - CHIP Pad Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 2 RFOUT RF output and DC Bias for the output stage. Die Bottom GND Die bottom must be connected to RF/DC ground. Application Circuit Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.9 Rbias Recommended Component Values Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 µF 1000 56 nH 100 pF 3000 8.2 nH 100 pF 7000 2.2 nH 100 pF 1 - 52 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.1002 MICROWAVE CORPORATION HMC397 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10.0 GHz Assembly Diagram 1 AMPLIFIERS - CHIP Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible