HMC404
v03.0907
GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz
Typical Applications
The HMC404 is ideal for: • 26 to 33 GHz Microwave Radios
Features
Integrated LO Amplifier: +2 dBm Input Sub-Harmonically Pumped (x2) LO Image Rejection: 22 dB Small Size: 1.90 x 1.25mm
3
MIXERS - I/Q MIXERS / IRM - CHIP
• Up and Down Converter for Point-to-Point Radios • Satellite Communication Systems
Functional Diagram
General Description
The HMC404 chip is a sub-harmonically pumped (x2) MMIC image rejection mixer with an integrated LO amplifier which can be used as an upconverter or downconverter. The chip utilizes a GaAs PHEMT technology that results in a small overall chip area of 2.31mm2. The on-chip 90° hybrid provides excellent amplitude and phase balance resulting in greater than 22 dB of image rejection. The LO amplifier is a single bias (+4V) two stage design with only +2 dBm nominal drive required.
Electrical Specifi cations, TA = +25° C
Parameter Min. Frequency Range, RF Frequency Range, LO Frequency Range, IF Conversion Loss (As IRM) Image Rejection Noise Figure 1 dB Compression (Input) 2LO to RF Isolation 2LO to IF Isolation IP3 (Input) Amplitude Balance Phase Balance Supply Current (Idd) +2 20 20 8 15 IF = 1 GHz LO = +2 dBm & Vdd = +4V Typ. 26 - 33 13 - 16.5 DC - 3 11 22 11 +6 35 35 16 ±1.5 ±7 28 38 15 15 Max. GHz GHz GHz dB dB dB dBm dB dB dBm dB Deg mA Units
* Unless otherwise noted, all measurements performed as downconverter. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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HMC404
v03.0907
Data Taken As IRM With 1 GHz IF Hybrid Conversion Gain vs. Temperature @ LO= +2 dBm, Vdd= +4V
0 -5 CONVERSION GAIN (dB)
GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz
Image Rejection vs. Temperature @ LO= +2 dBm, Vdd= +4V
30 25 IMAGE REJECTION (dB) 20 15 10 5 0
-10 -15 -20 -25 -30 24 26 28 30 32 34 36 RF FREQUENCY (GHz)
+25C -55C +85C
3
MIXERS - I/Q MIXERS / IRM - CHIP
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+25C -55C +85C
24
26
28
30
32
34
36
RF FREQUENCY (GHz)
Conversion Gain vs. LO Drive @ Vdd= +4V
0 -5 CONVERSION GAIN (dB) -10 -15 -20 -25 -30 24 26 28 30 32 34 36 RF FREQUENCY (GHz)
0 dBm +2 dBm +4 dBm
Input P1dB vs. Temperature @ LO= +2 dBm, Vdd= +4V
10
8 P1dB (dBm)
6
+25C -55C +85C
4
2
0 26 27 28 29 30 31 32 33 RF FREQUENCY (GHz)
Upconverter Performance Conversion Gain vs. LO Drive @ Vdd= +4V
0 -5 CONVERSION GAIN (dB)
Input IP3 vs. LO Drive @ Vdd= +4V*
20
15 -10 IP3 (dBm) -15 -20 -25 -30 24 26 28 30 32 34 36 RF FREQUENCY (GHz)
-2dBm 0dBm +2dBm +4dBm +6dBm
10
0 dBm +2 dBm +4 dBm +6 dBm
5
0 26 27 28 29 30 31 32 33 RF FREQUENCY (GHz)
* Two-tone input power= -10 dBm each tone, 1 MHz spacing. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC404
v03.0907
Quadrature Channel Data Taken Without IF Hybrid Conversion Gain vs. Vdd @ LO= +2 dBm, IF= 100 MHz
-5
GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz
Isolation @ LO= +2 dBm, IF= 100 MHz, Vdd= +4V
-10 -20
CONVERSION GAIN (dB)
ISOLATION (dB)
3
MIXERS - I/Q MIXERS / IRM - CHIP
-10
-30 -40 -50 -60 -70
RF/IF LO/RF LO/IF 2LO/RF 2LO/IF
-15
-20
3.75V 4.0V 4.25V
-25 24 26 28 30 32 34 36 RF FREQUENCY (GHz)
-80 25 26 27 28 29 30 31 32 33 34 35 RF FREQUENCY (GHz)
Return Loss @ LO= +2 dBm, Vdd= +4V
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz)
RF LO
IF Bandwidth @ LO= +2 dBm, Vdd= +4V
0 -5 RESPONSE (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 3 3.5 4 IF FREQUENCY (GHz)
Conversion Gain Return Loss
Amplitude Balance vs. Temperature @ LO= +2 dBm, IF= 100 MHz, Vdd= +4V
3 2 1 0 -1 -2 -3 24 26 28 30 32 34 36 RF FREQUENCY (GHz)
+25C -55C +85C
Phase Balance vs. Temperature @ LO= +2 dBm, IF= 100 MHz, Vdd= +4V
10 5 0 -5 -10 -15 -20 24 26 28 30 32 34 36 RF FREQUENCY (GHz)
+25C -55C +85C
3 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
PHASE BALANCE (degrees)
AMPLITUDE BALANCE (dB)
HMC404
v03.0907
GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz
MxN Spurious @ IF Port, Vdd = +4V
nLO mRF -3 -2 -1 0 1 2 3 RF = 30.5 GHz @ -10 dBm LO = 15 GHz @ +2 dBm All values in dBc below IF power level. Measured as downconverter 76 56 65 28 71 22 X -3 55 18 ±5 ±4 ±3 ±2 ±1 0
MxN Spurious @ RF Port, Vdd = +4V
nLO mIF -3 -2 -1 0 1 2 3 IF = 0.5 GHz @ -10 dBm LO = 15 GHz @ +2 dBm All values in dBc below RF power level. Measured as upconverter. ±5 ±4 ±3 ±2 66 64 X 17 22 76 55 64 53 6 57 65 36 ±1 0
3
MIXERS - I/Q MIXERS / IRM - CHIP
3 - 61
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC404
v03.0907
GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz
Absolute Maximum Ratings
RF / IF Input (Vdd = +5V) LO Drive (Vdd = +5V) +13 dBm +13 dBm 5.5V 238 mW -65 to +150 °C -55 to +85 °C
3
MIXERS - I/Q MIXERS / IRM - CHIP
Vdd Continuous Pdiss (Ta = 85 °C) (derate 2.64 mW/°C above 85 °C) Storage Temperature Operating Temperature
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard GP-2 Alternate [2]
NOTES: 1. ALL DIMENSIONS IN INCHES (MILLIMETERS) 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD 8. NO CONNECTION REQUIRED TO UNLABED BOND PADS
[1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC404
v03.0907
GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz
Pad Descriptions
Pad Number Function Description This pad is AC coupled and matched to 50 Ohm. Power supply for the LO Amplifier. An external RF bypass capacitor of 100 - 330 pF is required. A MIM border capacitor is recommended. The bond length to the capacitor should be as short as possible. The ground side of the capacitor should be connected to the housing ground. This pad is AC coupled and matched to 50 Ohm. Interface Schematic
1
LO
3
MIXERS - I/Q MIXERS / IRM - CHIP
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2
Vdd
3
RF
4
IF2
This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source/sink more than 3mA of current or die nonfunction and possible die failure will result.
5
IF1
This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source/sink more than 3mA of current or die nonfunction and possible die failure will result.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC404
v03.0907
GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz
Assembly Diagrams
3
MIXERS - I/Q MIXERS / IRM - CHIP
3 - 64
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC404
v03.0907
GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length
