HMC406MS8GE

HMC406MS8G / 406MS8GE v05.1209 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Typical Applications The HMC406MS8G(E) is ideal for: • WiMAX & WiLAN • DSRC • Military & Maritime Features Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count 11 LINEAR & POWER AMPLIFIERS - SMT • Private Mobile Radio • UNII & ISM Functional Diagram General Description The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5V supply voltage. Vpd can be used for full power down or RF output power/ current control. Electrical Specifi cations, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd = 0V/5V Vpd = 5V tON, tOFF 34 21 13 Min. Typ. 5-6 16 0.03 10 8 24 27 38 6.0 0.002 / 300 7 35 34 24 21 0.04 14 Max. Min. Typ. 5.7 - 5.9 17 0.03 11 9 27 29 38 6.0 0.002 / 300 7 35 21 0.04 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA mA ns 11 - 14 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC406MS8G / 406MS8GE v05.1209 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Broadband Gain & Return Loss 20 15 10 Gain vs. Temperature 22 20 18 16 RESPONSE (dB) 0 -5 -10 -15 -20 -25 3 4 5 6 7 8 S21 S11 S22 GAIN (dB) 5 14 12 10 8 6 4 2 0 4.5 5 5.5 6 6.5 +25 C +85 C -40 C 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 15 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 Output Return Loss vs. Temperature 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) -10 -15 +25 C +85 C -40 C -20 RETURN LOSS (dB) 6.5 -10 -25 -30 4.5 5 5.5 6 -15 4.5 5 5.5 6 6.5 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 34 Psat vs. Temperature 34 30 30 P1dB (dBm) 26 Psat (dBm) 26 22 22 +25 C +85 C -40 C 18 +25 C +85 C -40 C 18 14 4.5 5 5.5 6 6.5 14 4.5 5 5.5 6 6.5 FREQUENCY (GHz) FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC406MS8G / 406MS8GE v05.1209 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Power Compression @ 5.8 GHz 42 Output IP3 vs. Temperature 44 39 Pout (dBm), GAIN (dB), PAE (%) 36 30 34 IP3 (dBm) 24 18 12 29 11 LINEAR & POWER AMPLIFIERS - SMT +25 C +85 C -40 C 24 19 6 0 0 2 4 6 8 Pout (dBm) Gain (dB) PAE (%) 14 4.5 5 5.5 6 6.5 10 12 14 16 1 FREQUENCY (GHz) Noise Figure vs. Temperature 10 9 8 Gain & Power vs. Supply Voltage 24 23 22 21 32 31 30 29 28 27 26 25 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 4.5 5 5.5 6 6.5 +25 C +85 C -40 C GAIN dB) 20 19 18 17 16 15 14 4.75 5 Gain P1dB Psat ( ) 24 23 22 5.25 FREQUENCY (GHz) Vcc SUPPLY VOLTAGE (V) Reverse Isolation vs. Temperature 0 -10 Reverse Isolation Power Down Isolation Gain, Power & Quiescent Supply Current vs. Vpd @ 5.8 GHz 33 350 315 280 245 Icq 210 175 140 Gain P1dB Psat 105 70 35 0 3 3.5 4 4.5 5 GAIN (dB), P1dB (dBm), Psat (dBm) 30 27 24 21 18 15 12 9 6 3 ISOLATION (dB) -20 Icq (mA) -30 -40 -50 -60 4.5 5 5.5 6 6.5 2.5 FREQUENCY (GHz) Vpd (V) 11 - 16 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC406MS8G / 406MS8GE v05.1209 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage (Vpd) RF Input Power (RFIN)(Vs = Vpd = +5V) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 32 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +5.5V +5.5V +20 dBm 150 °C 2.1 W 31 °C/W -65 to +150 °C -40 to +85° C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 17 Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC406MS8G HMC406MS8GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H406 XXXX H406 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC406MS8G / 406MS8GE v05.1209 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 Vpd Power Control Pin. For maximum power, this pin should be connected to 5V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 11 LINEAR & POWER AMPLIFIERS - SMT 2, 4, 7 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. This pin is AC coupled and matched to 50 Ohms. 3 RFIN 5, 6 RFOUT RF output and bias for the output stage. The power supply for the output device needs to be supplied to these pins. 8 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed as close to the devices as possible. Application Circuit TL1 TL2 50 Ohm 0.231” TL3 50 Ohm 0.1” Note 1: C3 should be located < 0.020” from Pin 8 (Vcc) Note 2: C2 should be located < 0.020” from L1. Impedance Length 50 Ohm 0.038” 11 - 18 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC406MS8G / 406MS8GE v05.1209 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 19 List of Materials for Evaluation PCB 104989 [1] Item J1 - J2 J3 C1 - C3 C4 C5 C6 C7 L1 U1 PCB [2] Description PCB Mount SMA RF Connector 2mm DC Header 330 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum 0.6 pF Capacitor, 0603 Pkg. 1.6 pF Capacitor, 0603 Pkg. 100 pF Capacitor, 0603 Pkg. 3.9 nH Inductor, 0603 Pkg. HMC406MS8G(E) Amplifier 105021 Eval Board The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com