HMC407MS8GE

HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications This amplifier is ideal for use as a power amplifier for 5 - 7 GHz applications: • UNII • HiperLAN Features Gain: 15 dB Saturated Power: +29 dBm 28% PAE Supply Voltage: +5V Power Down Capability No External Matching Required 11 LINEAR & POWER AMPLIFIERS - SMT Functional Diagram General Description The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Electrical Specifi cations, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd = 0V/5V Vpd = 5V tON, tOFF 32 21 10 Min. Typ. 5-7 15 0.025 12 15 25 29 37 5.5 0.002 / 230 7 30 36 22 18 0.035 12 Max. Min. Typ. 5.6 - 6.0 15 0.025 12 15 25 29 40 5.5 0.002 / 230 7 30 18 0.035 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA mA ns 11 - 28 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Broadband Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Gain vs. Temperature 20 16 S21 S11 S22 GAIN (dB) 12 +25 C +85 C -40 C 8 11 7 7.5 8 4 0 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25 C +85 C -40 C RETURN LOSS (dB) RETURN LOSS (dB) -5 +25 C +85 C -40 C -5 -10 -10 -15 -15 -20 -20 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) -25 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) P1dB vs. Temperature 34 Psat vs. Temperature 34 30 P1dB (dBm) Psat (dBm) 30 26 26 +25 C +85 C -40 C 22 +25 C +85 C -40 C 22 18 18 14 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) 14 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 29 LINEAR & POWER AMPLIFIERS - SMT HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Power Compression @ 5.8 GHz 30 Pout (dBm), GAIN (dB), PAE (%) 25 20 15 10 5 0 0 4 8 12 16 20 INPUT POWER (dBm) Pout (dBm) Gain (dB) PAE (%) Output IP3 vs. Temperature 44 39 34 IP3 (dBm) 29 24 19 14 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) +25 C +85 C -40 C 11 LINEAR & POWER AMPLIFIERS - SMT Noise Figure vs. Temperature 10 Gain & Power vs. Supply Voltage 18 30 8 NOISE FIGURE (dB) 16 28 P1dB, Psat (dBm) GAIN (dB) 6 14 26 4 +25C +85C -40C 12 24 2 10 22 0 5 5.5 6 FREQUENCY (GHz) 6.5 7 8 4.75 5 Vcc SUPPLY VOLTAGE (Vdc) 20 5.25 Reverse Isolation vs. Temperature 0 Power Down Isolation 0 -10 ISOLATION (dB) +25 C +85 C -40 C -10 ISOLATION (dB) 7 7.5 8 -20 -20 -30 -40 -30 -50 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz) -40 4 5 6 FREQUENCY (GHz) 7 8 11 - 30 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 5.8 GHz 30 GAIN (dB), P1dB (dBm), Psat (dBm) 250 Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2) Control Voltage (Vpd) +5.5 Vdc +5.5 Vdc +20 dBm 150 °C 2W 32 °C/W -65 to +150 °C 25 P1dB Psat Gain Icq 200 RF Input Power (RFIN)(Vs = Vpd = +5Vdc) Junction Temperature 20 150 Icq (mA) Continuous Pdiss (T = 85 °C) (derate 31 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature 15 100 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 31 10 50 5 2.5 3 3.5 4 Vpd (Vdc) 4.5 0 5 -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC407MS8G HMC407MS8GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H407 XXXX H407 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 Vcc1 Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. 11 LINEAR & POWER AMPLIFIERS - SMT 2 Vpd Power control pin. For maximum power, this pin should be connected to 5V. A higher voltage is not recommended. For lower die current, this voltage can be reduced. 3, 6, 7 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. This pin is AC coupled and matched to 50 Ohms. This pin is AC coupled and matched to 50 Ohms. 4 RFIN 5 RFOUT 8 Vcc2 Power supply voltage for the output amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed no more than 20 mils form package lead. Application Circuit Note 1: Vcc1 and Vcc2 may be connected to a common Vcc. Note 2: C2 should be located < 0.020” from Pin 8 (Vcc2). 11 - 32 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 33 List of Materials for Evaluation PCB 104987 [1] Item J1 - J2 J3 C1 - C3 C4 U1 PCB [2] Description PCB Mount SMA RF Connector 2 mm DC Header 330 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum HMC407MS8G / HMC407MS8GE Amplifier 104628 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com