HMC408LP3_09

HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Typical Applications The HMC408LP3 / HMC408LP3E is ideal for: • 802.11a & HiperLAN WLAN • UNII & Point-to-Point / Multi-Point Radios • Access Point Radios Features Gain: 20 dB Saturated Power: +32.5 dBm @ 27% PAE Single Supply Voltage: +5V Power Down Capability 3x3 mm Leadless SMT Package 11 LINEAR & POWER AMPLIFIERS - SMT Functional Diagram General Description The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMICs which offer +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance. Electrical Specifi cations, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss* Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Harmonics, Pout= 30 dBm, F= 5.8 GHz Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd= 0V/5V Vpd= 5V tOn, tOff 2 fo 3 fo 40 Icq= 750 mA Icq= 500 mA 27 17 Min. Typ. 5.7 - 5.9 20 0.045 8 14 30 27 32.5 43 -50 -90 6 0.002 / 750 14 50 36 24 0.055 17 Max. Min. Typ. 5.1 - 5.9 20 0.045 8 6 27 23 31 39 -50 -90 6 0.002 / 750 14 50 0.055 Max. Units GHz dB dB/°C dB dB dBm dBm dBm dBc dBc dB mA mA ns * Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein. 11 - 34 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Broadband Gain & Return Loss 25 Gain vs. Temperature 26 24 22 20 18 16 14 12 10 8 6 4 2 0 4.8 15 RESPONSE (dB) S21 S11 S22 5 GAIN (dB) -5 +25 C +85 C -40 C 11 5.8 6 6.2 -15 -25 3 4 5 6 7 8 FREQUENCY (GHz) 5 5.2 5.4 5.6 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature* 0 +25 C +85 C -40 C -4 RETURN LOSS (dB) RETURN LOSS (dB) -5 -8 -10 -12 -15 +25 C +85 C -40 C -16 -20 4.8 5 5.2 5.4 5.6 5.8 6 6.2 -20 4.8 5 5.2 5.4 5.6 5.8 6 6.2 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 36 32 28 24 20 16 12 4.8 +25 C +85 C -40 C Psat vs. Temperature 36 33 30 P1dB (dBm) Psat (dBm) 27 24 21 18 15 12 4.8 +25 C +85 C -40 C 5 5.2 5.4 5.6 5.8 6 6.2 5 5.2 5.4 5.6 5.8 6 6.2 FREQUENCY (GHz) FREQUENCY (GHz) * Output match optimized for 5.7 - 5.9 GHz. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 35 LINEAR & POWER AMPLIFIERS - SMT HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Power Compression @ 5.8 GHz 36 Pout (dBm), GAIN (dB), PAE (%) 30 24 Pout (dBm) Gain (dB) PAE (%) Output IP3 vs. Temperature 45 42 IP3 (dBm) 39 11 LINEAR & POWER AMPLIFIERS - SMT 18 12 6 0 -10 36 +25 C +85 C -40 C 33 -5 0 5 10 15 20 30 4.8 5 5.2 5.4 5.6 5.8 6 6.2 INPUT POWER (dBm) FREQUENCY (GHz) Noise Figure vs. Temperature 10 Gain & Power vs. Supply Voltage @ 5.8 GHz 34 GAIN (dB), P1dB (dBm), Psat (dBm) 32 30 28 26 24 22 20 18 4.75 Gain P1dB Psat 8 NOISE FIGURE (dB) 6 4 +25 C +85 C -40 C 2 0 4.8 5 5.2 5.4 5.6 5.8 6 6.2 5 Vcc Supply Voltage (Vdc) 5.25 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 4.8 Reverse Isolation Power Down Isolation Gain, Power & Quiescent Supply Current vs. Vpd @ 5.8 GHz 36 GAIN (dB), P1dB (dBm), Psat (dBm) 33 30 27 24 21 18 15 12 Gain P1dB Psat Icq 800 700 600 500 Icq (mA) 400 300 200 100 0 3 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5 Vpd (Vdc) 5 5.2 5.4 5.6 5.8 6 6.2 FREQUENCY (GHz) 11 - 36 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Typical Supply Current vs. Vs= Vcc1 + Vcc2 Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2) Control Voltage (Vpd) RF Input Power (RFIN)(Vs = Vpd = +5Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 72.5 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc +5.5 Vdc +20 dBm 150 °C 4.71 W 13.8 °C/W -65 to +150 °C -40 to +85 °C Vs (V) 4.75 5.0 Icq (mA) 725 750 5.25 780 Note: Amplifier will operate over full voltage range shown above 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 37 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC408LP3 HMC408LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 408 XXXX 408 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 Vpd Power control pin. For maximum power, this pin should be connected to 5V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 11 LINEAR & POWER AMPLIFIERS - SMT 2, 4, 5 - 8, 12, 13, 15 3 N/C RFIN No Connection This pin AC coupled and matched to 50 Ohms. 9, 10, 11 RFOUT RF output and DC bias for the output stage. 14 Vcc2 Power supply voltage for the second amplifier stage. External bypass capacitors and pull up choke are required as shown in the application schematic. Power supply voltage for the first amplifier stage. External bypass capacitors are required as shown in the application schematic. Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 16 Vcc1 GND 11 - 38 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 39 List of Materials for Evaluation PCB 105180 [1] Item J1 - J2 J3 C1 - C4 C5 - C7 C8 C9 - C10 C11 L1 - L2 U1 PCB [2] Description PCB Mount SMA RF Connector 2 mm DC Header 1,000 pF Capacitor, 0603 Pkg. 100 pF Capacitor, 0402 Pkg. 2.2 μF Tantalum Capacitor 0.5 pF Capacitor, 0603 Pkg. 10 pF Capacitor, 0402 Pkg. 1.6 nH Inductor, 0603 Pkg. HMC408LP3 / HMC408LP3E Amplifier 104629 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Application Circuit 11 LINEAR & POWER AMPLIFIERS - SMT Recommended Component Values L1, L2 C1 - C4 C5 - C7 C8 C9 - C10 1.6 nH 1,000 pF 100 pF 2.2 μF 0.5 pF Impedance Length TL1 50 Ohm 0.200” TL2 50 Ohm 0.100” Note 1: C9, C10 should be located < 0.020” from pins 9, 10, & 11. Note 2: Application circuit values shown are optimized for 5.7 - 5.9 GHz operation. Contact our Applications Engineers for optimization of output match for other frequencies. 11 - 40 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Notes: 11 LINEAR & POWER AMPLIFIERS - SMT F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 41