HMC425_09

HMC425 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 2.4 - 8.0 GHz v02.0907 1 ATTENUATORS - DIGITAL - CHIP Typical Applications The HMC425 is ideal for: • Fiber Optics & Broadband Telecom • Microwave Radio & VSAT • Military Radios, Radar, & ECM • Space Applications Features 0.5 dB LSB Steps to 31.5 dB Single Control Line Per Bit ±0.5 dB Typical Bit Error Die Size: 1.5 x 0.85 x 0.1 mm Functional Diagram General Description The HMC425 die is a broadband 6-bit GaAs IC digital attenuator MMIC chip. Covering 2.4 to 8 GHz, the insertion loss is less then 3.5 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of 31.5 dB. Attenuation accuracy is excellent at ±0.5 dB typical step error with an IIP3 of +40 dBm. Six control voltage inputs, toggled between 0 and +3 to +5V, are used to select each attenuation state. A single Vdd bias of +3 to +5V is required. Electrical Specifi cations, TA = +25° C, With Vdd = +5V & Vctl = 0/+5V (Unless Otherwise Noted) Parameter Insertion Loss Attenuation Range Return Loss (RF1 & RF2, All Atten. States) Attenuation Accuracy: (Referenced to Insertion Loss) Input Power for 0.1 dB Compression Input Third Order Intercept Point (Two-Tone Input Power= 0 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON/tOFF (50% CTL to 10/90% RF) All States Vdd= 5V Vdd= 3V REF - 16.0 dB States 16.5 - 31.5 dB States Frequency (GHz) 2.4 - 6.0 GHz 6.0 - 8.0 GHz 2.4 - 8.0 GHz 2.4 - 8.0 GHz 2.4 - 8.0 GHz 2.4 - 8.0 GHz 2.4 - 8.0 GHz 2.4 - 8.0 GHz 160 180 ns ns 12 Min. Typ. 2.7 3.5 31.5 15 Max. 3.2 4.0 Units dB dB dB dB dB dBm dBm dBm dBm ± 0.4 + 4% of Atten. Setting Max 22 19 45 35 1 - 14 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC425 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 2.4 - 8.0 GHz Return Loss RF1, RF2 Insertion Loss 0 v02.0907 (Only Major States are Shown) 0 1 8 dB 16 dB 31.5 dB INSERTION LOSS (dB) -2 RETURN LOSS (dB) -5 0.5 dB 1 dB 2 dB 4 dB -4 +25 C +85 C -55 C -10 -6 -15 -8 -20 -10 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) -25 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Normalized Attenuation (Only Major States are Shown) 0 NORMALIZED ATTENUATION (dB) -5 -10 -15 -20 -25 -30 -35 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) -2 0 4 8 12 16 20 24 28 32 ATTENUATION STATE (dB) 0.5 dB 1 dB 2 dB 4 dB 8 dB 16 dB 31.5 dB Bit Error vs. Attenuation State 2 2.4 GHz 3.5 GHz 5.5 GHz 8.0 GHz 1 BIT ERROR (dB) 0 -1 Bit Error vs. Frequency (Only Major States are Shown) 2 0.5 dB 1 dB 2 dB 4 dB 8 dB 16 dB 31.5 dB Relative Phase vs. Frequency (Only Major States are Shown) 80 60 RELATIVE PHASE (deg) 40 20 0 -20 0.5 dB 1 dB 2 dB 4 dB 8 dB 16 dB 31.5 dB 1 BIT ERROR (dB) 0 -1 -2 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) -40 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 15 ATTENUATORS - DIGITAL - CHIP HMC425 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 2.4 - 8.0 GHz v02.0907 1 ATTENUATORS - DIGITAL - CHIP Worst Case Step Error Between Successive Attenuation States 2 1.5 STEP ERROR (dB) 1 0.5 0 Bias Voltage & Current Vdd Range= +3 to +5 Vdc Vdd (Vdc) +3.0 +5.0 Idd (Typ.) (μA) 10 30 -0.5 -1 Control Voltage State Low 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) -1.5 -2 Bias Condition 0 to 0.2V @ 10 μA Typ. Vdd ± 0.2V @ 5 μA Typ. High Note: Vdd= +3V to +5V Truth Table Control Voltage Input V1 16 dB High High High High High High Low Low V2 8 dB High High High High High Low High Low V3 4 dB High High High High Low High High Low V4 2 dB High High High Low High High High Low V5 1 dB High High Low High High High High Low V6 0.5 dB High Low High High High High High Low Attenuation State RF1 - RF2 Reference I.L. 0.5 dB 1 dB 2 dB 4 dB 8 dB 16 dB 31.5 dB Absolute Maximum Ratings Control Voltage (V1 to V6) Bias Voltage (Vdd) Storage Temperature Operating Temperature RF Input Power (2.4 - 8.0 GHz) ESD Sensitivity (HBM) Vdd +0.5 Vdc +7.0 Vdc -65 to + 150 °C -55 to +85 °C +30 dBm Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Any Combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. Die Packaging Information [1] Standard WP-8 (Waffle Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 16 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC425 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 2.4 - 8.0 GHz Outline Drawing v02.0907 1 ATTENUATORS - DIGITAL - CHIP Interface Schematic 1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS). 2. TYPICAL BOND PAD IS .004” SQUARE. 3. TYPICAL BOND PAD SPACING IS .006” CENTER TO CENTER EXCEPT AS NOTED. 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD Pad Descriptions Pad Number Function Description GND Die bottom must be connected to RF ground. 1, 3 2 RF1, RF2 Vdd This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required. Supply Voltage 4, 5, 6, 7, 8, 9 V1 - V6 See truth table and control voltage table. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 17 HMC425 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 2.4 - 8.0 GHz v02.0907 1 ATTENUATORS - DIGITAL - CHIP Assembly Diagram 1 - 18 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC425 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 2.4 - 8.0 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) v02.0907 1 ATTENUATORS - DIGITAL - CHIP 1 - 19 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible