HMC430LP4E

HMC430LP4E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC430LP4E - MMIC VCO w/ BUFFER AMPLIFIER, 5.0 - 5.5 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC430LP4E 数据手册
HMC430LP4 / 430LP4E v06.1106 MMIC VCO w/ BUFFER AMPLIFIER, 5.0 - 5.5 GHz Features Pout: +2 dBm Phase Noise: -103 dBc/Hz @100 kHz No External Resonator Needed Single Supply: 3V @ 27 mA 16mm2 Leadless SMT Package Typical Applications Low noise MMIC VCO w/Buffer Amplifier for C-Band applications such as: • 802.11a & HiperLAN WLAN • VSAT Radios • UNII & Point-to-Point Radios Functional Diagram General Description The HMC430LP4 & HMC430LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 2 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4 x 4 mm surface mount package. 11 VCOS & PLOs - SMT Electrical Specifi cations, TA = +25° C, Vcc = +3V Parameter Frequency Range Power Output SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune Voltage (Vtune) Supply Current (Icc) (Vcc= +3.0V) Tune Port Leakage Current Output Return Loss Harmonics 2nd 3rd Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= +5V Frequency Drift Rate 6 -15 -25 12 12 0.8 0 27 10 -1 Min. Typ. 5.0 - 5.5 2 -103 10 Max. Units GHz dBm dBc/Hz V mA μA dB dBc dBc MHz pp MHz/V MHz/°C 11 - 78 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC430LP4 / 430LP4E v06.1106 MMIC VCO w/ BUFFER AMPLIFIER, 5.0 - 5.5 GHz Frequency vs. Tuning Voltage, Vcc= +3V 6 OUTPUT FREQUENCY (GHz) 5.8 5.6 5.4 5.2 5 4.8 4.6 4.4 +25 C +85 C -40 C Frequency vs. Tuning Voltage, T= 25°C 6 OUTPUT FREQUENCY (GHz) 5.8 5.6 5.4 5.2 5 4.8 4.6 4.4 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) Vcc= 2.75V Vcc= 3.0V Vcc= 3.25V 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) 11 VCOS & PLOs - SMT 11 - 79 Sensitivity vs. Tuning Voltage, Vcc= +3V 400 350 SENSITIVITY (MHz/VOLT) 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) +25 C +85 C -40 C Output Power vs. Tuning Voltage, Vcc= +3V 10 8 OUTPUT POWER (dBm) 6 4 2 0 -2 -4 -6 -8 -10 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) +25 C +85 C -40 C Phase Noise vs. Tuning Voltage -70 SSB PHASE NOISE (dBc/Hz) -75 -80 -85 -90 -95 -100 -105 -110 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) 10kHz offset 100kHz offset Typical SSB Phase Noise @ Vtune= +5V 0 SSB PHASE NOISE (dBc/Hz) -25 -50 -75 -100 -125 -150 3 10 +25 C +85 C -40 C 10 4 10 5 10 6 10 7 OFFSET FREQUENCY (Hz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC430LP4 / 430LP4E v06.1106 MMIC VCO w/ BUFFER AMPLIFIER, 5.0 - 5.5 GHz Typical Supply Current vs. Vcc Vcc (V) 2.75 3.0 3.25 Icc (mA) 19 27 34 Absolute Maximum Ratings Vcc Vtune Junction Temperature Continuous Pdiss (T = 85°C) (derate 2.1 mW/°C above 85°C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +3.5 Vdc 0 to +11V 135 °C 104 mW 482 °C/W -65 to +150 °C -40 to +85 °C Class 1A Note: VCO will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 VCOS & PLOs - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC430LP4 HMC430LP4E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H430 XXXX H430 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 80 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC430LP4 / 430LP4E v06.1106 MMIC VCO w/ BUFFER AMPLIFIER, 5.0 - 5.5 GHz Pin Descriptions Pin Number 1- 14, 17 - 19, 21, 23, 24 Function N/C Description No Connection Interface Schematic 15 GND This pin must be connected to RF & DC ground. 16 RFOUT RF output (AC coupled) 20 Vcc Supply Voltage Vcc= 3V 11 VCOS & PLOs - SMT 11 - 81 22 VTUNE Control Voltage Input. Modulation port bandwidth dependent on drive source impedance. GND Package bottom has an exposed metal paddle that must be RF & DC grounded. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC430LP4 / 430LP4E v06.1106 MMIC VCO w/ BUFFER AMPLIFIER, 5.0 - 5.5 GHz Evaluation PCB 11 VCOS & PLOs - SMT List of Materials for Evaluation PCB 105706 [1] Item J1 - J2 J3 - J4 C1 C2 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 4.7 μF Tantalum Capacitor 10,000 pF Capacitor, 0603 Pkg. HMC430LP4 / HMC430LP4E VCO 105667 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. 11 - 82 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC430LP4 / 430LP4E v06.1106 MMIC VCO w/ BUFFER AMPLIFIER, 5.0 - 5.5 GHz Notes: 11 VCOS & PLOs - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 83
HMC430LP4E
物料型号: - HMC430LP4 / HMC430LP4E

器件简介: - HMC430LP4和HMC430LP4E是GaAs InGaP异质结双极晶体管(HBT)MMIC VCO,集成了谐振器、负阻抗器件、变容二极管和缓冲放大器。这些VCO在温度、冲击、振动和工艺方面表现出色,因为振荡器的单片结构。从3V电源电压下,输出功率典型值为2 dBm。电压控制振荡器采用低成本的无引线QFN 4 x 4 mm表面贴装封装。

引脚分配: - 1-14, 17-19, 21, 23, 24:无连接(N/C) - 15:GND,必须连接到RF和DC地。 - 16:Vcc,电源电压输入。 - 20:VTUNEO,控制电压输入,调制端口带宽依赖于驱动源阻抗。 - 22:QGND,包地。

参数特性: - 频率范围:5.0-5.5 GHz - 输出功率:-1 dBm至2 dBm - 相位噪声:-103 dBc/Hz @100 kHz偏移 - 调节电压(Vtune):0至10V - 电源电流(Icc):27 mA(在+3.0V时) - 输出回波损耗:6 dB - 谐波(2nd和3rd):-15 dBc和-25 dBc - 频率牵引率:0.8 MHz/°C

功能详解: - 该器件是一个低噪声MMIC VCO,带有缓冲放大器,适用于C波段应用,如802.11a和HiperLAN WLAN、VSAT无线电、UNII和点对点无线电。不需要外部谐振器,并且采用单电源供电:3V @ 27 mA。

应用信息: - 适用于C波段应用,如无线局域网、VSAT无线电和点对点无线电。

封装信息: - HMC430LP4:低应力注塑塑料封装,Sn/Pb焊料,MSL1等级,标记为H430 XXXX。 - HMC430LP4E:符合RoHS的低应力注塑塑料封装,100%亚光Sn,MSL1等级,标记为H430 XXXX。
HMC430LP4E 价格&库存

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