HMC441LP3E

HMC441LP3 / 441LP3E v04.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC441LP3 / HMC441LP3E is a medium PA for: • Point-to-Point Radios • Point-to-Multi-Point Radios • VSAT Features Gain: 14 dB Saturated Power: +20 dBm @ 20% PAE Single Supply Voltage: +5V w/ Optional Gate Bias 50 Ohm Matched Input/Output 16 Lead 3x3mm SMT Package: 9mm2 11 LINEAR & POWER AMPLIFIERS - SMT • LO Driver for HMC Mixers • Military EW & ECM Functional Diagram General Description The HMC441LP3 & HMC441LP3E are broadband GaAs PHEMT MMIC Medium Power Amplifiers which operate between 6.5 and 13.5 GHz. The leadless plastic QFN surface mount packaged amplifier provides 14 dB of gain, +20 dBm saturated power at 20% PAE from a +5V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. This 50 Ohm matched amplifier does not require any external components making it an ideal linear gain block or driver for HMC SMT mixers. Vgg1, Vgg2: Optional Gate Bias Electrical Specifi cations, TA = +25° C, Vdd = 5V, Vgg1 = Vgg2 = Open Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 23 13 10 Min. Typ. 6.5 - 8.0 13 0.02 12 12 16 18.5 26 5.0 90 115 26 15 0.025 12 Max. Min. Typ. 8.0 - 11.0 14 0.02 15 15 18 20 29 4.5 90 115 26 14 0.025 10 Max. Min. Typ. 11.0 - 13.5 13 0.02 14 13 17 19.5 29 4.75 90 115 0.025 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA 11 - 94 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441LP3 / 441LP3E v04.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Broadband Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 4 5 6 7 8 9 10 11 12 13 14 15 16 FREQUENCY (GHz) Gain vs. Temperature 20 16 S21 S11 S22 GAIN (dB) 12 +25 C +85 C -40 C 8 11 12 13 14 4 0 6 7 8 9 10 11 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25 C +85 C -40 C Output Return Loss vs. Temperature 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) -10 -10 -15 -15 -20 -20 -25 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) -25 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) P1dB vs. Temperature 24 Psat vs. Temperature 24 20 20 P1dB (dB) 16 +25 C +85 C -40 C Psat (dB) 16 +25 C +85 C -40 C 12 12 8 8 4 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) 4 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 95 LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v04.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Power Compression @ 10 GHz 22 Pout (dBm), GAIN (dB), PAE (%) 20 18 16 Pout Gain PAE Output IP3 vs. Temperature 36 32 IP3 (dBm) 14 12 10 8 6 4 2 28 11 LINEAR & POWER AMPLIFIERS - SMT 24 +25 C +85 C -40 C 20 0 -10 16 -6 -2 2 6 10 6 7 8 9 10 11 12 13 14 INPUT POWER (dBm) FREQUENCY (GHz) Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 32 30 28 26 24 22 20 18 16 14 12 10 3 3.5 4 4.5 5 5.5 Vdd Supply Voltage (V) Gain P1dB Psat IP3 Gain, Power & Idd vs. Gate Voltage @ 10 GHz 35 GAIN (dB), P1dB (dBm), Psat (dBm) 30 25 20 15 10 5 0 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 210 180 Gain P1dB Psat Idd 150 120 90 60 30 0 Idd (mA) Vgg1, Vgg2 Gate Volltage (V) Noise Figure vs. Temperature 10 +25 C +85 C -40 C Reverse Isolation vs. Temperature 0 8 NOISE FIGURE (dB) -10 ISOLATION (dB) +25 C +85 C -40 C 6 -20 4 -30 2 -40 0 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) -50 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) 11 - 96 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441LP3 / 441LP3E v04.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1,Vgg2) RF Input Power (RFIN)(Vdd = +5 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 8.5 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +6 Vdc -8 to 0 Vdc +15 dBm 175 °C 0.76 W 118.2 °C/W -65 to +150 °C Typical Supply Current vs. Vdd Vdd (V) +5.5 +5.0 +4.5 +3.3 +3.0 Idd (mA) 92 90 88 83 82 Note: Amplifier will operate over full voltage range shown above 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 97 -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC441LP3 HMC441LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 441 XXXX 441 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441LP3 / 441LP3E v04.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Pin Descriptions Pin Number 1, 3-5, 8-10, 12-14, 16 2 Function N/C Description This pin may be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohms. Interface Schematic RFIN 11 6, 7 Vgg1, Vgg2 Optional gate control for amplifier. If left open, the amplifier will run at standard current. Negative voltage applied will reduce current. LINEAR & POWER AMPLIFIERS - SMT 11 RFOUT This pin is AC coupled and matched to 50 Ohms. 15 Vdd Power Supply Voltage for the amplifier. An external bypass capacitor of 100 pF is required. GND Package bottom must be connected to RF/DC ground. 11 - 98 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441LP3 / 441LP3E v04.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 99 List of Materials for Evaluation PCB 106705 [1] Item J1 - J2 J3 - J7 C1 C2 - C4 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 4.7 μF Capacitor, Tantalum 100 pF Capacitor, 0402 Pkg. HMC441LP3 / HMC441LP3E Amplifier 106639 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com