HMC442LC3B

HMC442LC3B v02.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Typical Applications The HMC442LC3B is an ideal gain block or driver amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios Features Gain: 13 dB Saturated Power: +23 dBm @ 26% PAE Supply Voltage: +5V 50 Ohm Matched Input/Output RoHS Compliant 3 x 3 mm SMT package 11 • LO Driver for HMC Mixers • Military EW & ECM Functional Diagram General Description The HMC442LC3B is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless “Pb free” RoHS compliant SMT package. Operating between 17.5 and 25.5 GHz, the amplifier provides 13 dB of gain, +23 dBm of saturated power and 26% PAE from a +5V supply voltage. This 50 Ohm matched amplifier does not require any external components, making it an ideal linear gain block or driver for HMC SMT mixers. The HMC442LC3B allows the use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd = +5V, Idd = 84 mA* Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.) 18 10 Min. Typ. 17.5 - 21.0 13 0.02 10 9 21 23 27 8 84 19 0.03 10 Max. Min. Typ. 21.0 - 24.0 13 0.02 10 9 22 23.5 26 8 84 19 0.03 8 Max. Min. Typ. 24.0 - 25.5 11 0.02 5 12 22 23 26 9 84 0.03 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA *Adjust Vgg between -1.5 to -0.5V to achieve Idd = 84 mA typical. 11 - 104 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC442LC3B v02.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Broadband Gain & Return Loss 15 10 Gain vs. Temperature 20 16 RESPONSE (dB) 5 0 -5 -10 4 -15 -20 14 17 20 23 26 29 FREQUENCY (GHz) 0 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) S21 S11 S22 GAIN (dB) 12 8 +25C +85C -40C 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 105 Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 -4 RETURN LOSS (dB) -4 RETURN LOSS (dB) -8 -8 -12 -12 +25C +85C -40C -16 -16 -20 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) -20 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) P1dB vs. Temperature 30 Psat vs. Temperature 30 26 P1dB (dBm) Psat (dBm) 26 22 22 +25C +85C -40C 18 +25C +85C -40C 18 14 14 10 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) 10 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC442LC3B v02.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Power Compression @ 18 GHz 28 Pout (dBm), GAIN (dB), PAE (%) 24 20 16 12 8 4 0 -10 Power Compression @ 23 GHz 28 Pout (dBm), GAIN (dB), PAE (%) 24 20 16 12 8 4 0 -10 Pout Gain PAE Pout Gain PAE 11 -6 -2 2 6 10 14 -6 -2 2 6 10 14 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 34 Noise Figure vs. Temperature 12 10 NOISE FIGURE (dB) 8 6 4 2 0 +25C +85C -40C 30 Psat (dBm) 26 22 +25C +85C -40C 18 14 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) Gain, Power and Output IP3 vs. Supply Voltage @ 23 GHz GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 30 25 Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) +25C +85C -40C 20 15 10 5 0 4.5 GAIN P1dB Psat IP3 5 Vdd Supply Voltage (Vdc) 5.5 11 - 106 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC442LC3B v02.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +5Vdc, Idd = 85 mA) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 5.46 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +5.5 Vdc -8.0 to 0 Vdc +16 dBm 175 °C Typical Supply Current vs. Vdd Vdd (V) +4.5 +5.0 +5.5 Idd (mA) 82 84 86 Note: Amplifier will operate over full voltage range shown above 0.491 W 183 °C/W -65 to +150 °C -40 to +85 °C Class 1A 11 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30 - 80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 107 LINEAR & POWER AMPLIFIERS - SMT HMC442LC3B v02.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Pin Descriptions Pin Number 1, 3, 7, 9 Function GND Description Package bottom must also be connected to RF/DC ground Interface Schematic 2 RFIN This pin is AC coupled and matched to 50 Ohms. This pin may be connected to RF/DC ground. Performance will not be affected. 11 4, 6, 10, 12 N/C 5 Vgg Gate control for amplifier. Adjust to achieve Id of 84 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. 8 RFOUT This pin is AC coupled and matched to 50 Ohms. 11 Vdd Power Supply Voltage for the amplifier. External bypass capacitors are required. Application Circuit Component C1, C2 C3, C4 C5, C6 Value 100 pF 1,000 pF 2.2 μF 11 - 108 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC442LC3B v02.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 109 List of Materials for Evaluation PCB 109712 [1] Item J1 - J2 J3 - J6 C1 - C2 C3 - C4 C5 - C6 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum HMC442LC3B Amplifier 109710 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com