HMC450QS16G

HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Typical Applications The HMC450QS16G / HMC450QS16GE is ideal for power and driver amplifier applications: • GSM, GPRS, & Edge • CDMA & WCDMA Features Gain: 26 dB 32% PAE @ 28.5 dBm Output Power +40 dBm Output IP3 Integrated Power Control (Vpd) Included in the HMC-DK002 Designer’s Kit 11 LINEAR & POWER AMPLIFIERS - SMT • Base Stations & Repeaters Functional Diagram General Description The HMC450QS16G & HMC450QS16GE are high efficiency GaAs InGaP HBT Medium Power MMIC amplifiers operating between 800 and 1000 MHz. The amplifier is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the higher band HMC413QS16G 1.62.3 GHz PA. With a minimum of external components, the amplifier provides 26 dB of gain, +40 dBm OIP3 and +28.5 dBm of saturated power from a +5V supply voltage. The integrated power control (Vpd) can be used for full power down or RF output power/current control. The combination of high gain and high output IP3 make the HMC450QS16G & HMC450QS16GE ideal linear drivers for Cellular, PCS & 3G applications. Electrical Specifi cations, TA = +25° C, Vs = +5V, Vpd = +4V [1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed tON, tOFF 37 23 23 Min. Typ. 0.8 - 1.0 26 0.015 17 13 26 28.5 40 8 310 12 10 0.025 Max. Units GHz dB dB/°C dB dB dBm dBm dBm dB mA mA ns [1] Specifications and data reflect HMC450QS16G measured using the application circuit found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone output power of +15 dBm per tone, 1 MHz spacing. 11 - 114 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Broadband Gain & Return Loss 30 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 -30 0.6 0.7 0.8 0.9 1 1.1 1.2 Gain vs. Temperature 32 30 28 GAIN (dB) 26 24 22 20 0.7 +25 C +85 C -40 C S21 S11 S22 11 0.8 0.9 FREQUENCY (GHz) 1 1.1 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0.7 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) +25 C +85 C -40 C -5 +25 C +85 C -40 C -10 -15 0.8 0.9 FREQUENCY (GHz) 1 1.1 -20 0.7 0.8 0.9 FREQUENCY (GHz) 1 1.1 Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) Power Down Isolation vs. Temperature 0 -10 -20 ISOLATION (dB) -20 -30 -40 -50 -60 -70 0.7 +25 C +85 C -40 C -30 -40 -50 -60 -70 -80 0.7 +25 C +85 C -40 C 0.8 0.9 FREQUENCY (GHz) 1 1.1 0.8 0.9 FREQUENCY (GHz) 1 1.1 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 115 LINEAR & POWER AMPLIFIERS - SMT HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz P1dB vs. Temperature 30 29 28 27 26 25 24 23 22 21 +25 C +85 C -40 C Psat vs. Temperature 30 29 28 27 PSAT (dBm) 26 25 24 23 22 21 +25 C +85 C -40 C 11 LINEAR & POWER AMPLIFIERS - SMT P1dB (dBm) 20 0.7 0.8 0.9 FREQUENCY (GHz) 1 1.1 20 0.7 0.8 0.9 FREQUENCY (GHz) 1 1.1 Output IP3 vs. Temperature 46 44 Noise Figure vs. Temperature 12 10 NOISE FIGURE (dB) 8 6 4 2 0 0.7 +25 C +85 C -40 C 42 OIP3 (dBm) 40 38 36 34 32 30 0.7 +25 C +85 C -40 C 0.8 0.9 FREQUENCY (GHz) 1 1.1 0.8 0.9 FREQUENCY (GHz) 1 1.1 Gain and Power vs. Supply Voltage @ 900 MHz, Vpd= 4V 30 GAIN (dB), P1dB (dBm), Psat (dBm) Gain, Power, OIP3 and Supply Current vs. Power Down Voltage @ 900 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 40 36 32 28 24 20 16 12 8 2.8 3 3.2 3.4 Vpd (Vdc) 3.6 3.8 4 Gain Psat P1dB OIP3 Icc 360 320 280 240 Icc (mA) 200 160 120 80 40 28 26 24 Gain Psat P1dB 22 20 2.75 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 Vcc SUPPLY VOLTAGE (Vdc) 11 - 116 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz ACPR vs. Supply Voltage @ 900 MHz CDMA IS95, 9 Channels Forward -25 -30 -35 -40 ACPR (dBc) -45 -50 -55 -60 -65 -70 -75 -80 -85 Source ACPR 8 10 12 14 16 18 20 22 24 5V 5.5V CDMA IS95 Frequency: 900 MHz Integration BW: 1.228 MHz Forward Link, 9 Channels Power Compression @ 900 MHz 40 Pout (dBm), GAIN (dB), PAE (%) 36 32 28 24 20 16 12 8 4 0 -20 -16 -12 -8 -4 0 4 8 Pout (dBm) Gain (dB) PAE (%) 4.5V 11 Channel Power (dBm) INPUT POWER (dBm) Power Dissipation@ 900 MHz 2 1.8 Max Pdiss @ +85C 1.6 1.4 1.2 1 -20 -15 -10 -5 0 5 10 INPUT POWER (dBm) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 117 LINEAR & POWER AMPLIFIERS - SMT POWER DISSIPATION (W) HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Typical Supply Current vs. Supply Voltage Vs (V) 4.75 5.0 5.25 150 °C 1.86 W 35 °C/W -65 to +150 °C -40 to +85 °C Icq (mA) 300 310 325 Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage (Vpd1, Vpd2) RF Input Power (RFIN)(Vs = +5Vdc, VPD = +4.0 Vdc) Junction Temperature +5.5 Vdc +5Vdc +10 dBm Note: Amplifier will operate over full voltage range shown above 11 LINEAR & POWER AMPLIFIERS - SMT Continuous Pdiss (T = 85 °C) (derate 28 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC450QS16G HMC450QS16GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H450 XXXX H450 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 118 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Pin Descriptions Pin Number 1, 2, 4, 5, 7, 8, 9, 10, 13, 15 Function GND Description Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. Interface Schematic 3, 14 Vpd1, Vpd2 Power Control Pin. For maximum power, this pin should be connected to 4.0V. For 5V operation, a dropping resistor is required. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 119 6 RFIN This pin is AC coupled and matched to 50 Ohms from 0.8 to 1.0 GHz. 11, 12 RFOUT RF output and bias for the output stage. 16 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Application Circuit 11 LINEAR & POWER AMPLIFIERS - SMT Recommended Component Values C1, C2, C7, C8 C3 C4 C5 C6 C9, C10 L1 L2 L3 R1, R2 TL1 Impedance Physical Electrical Length Length 50 Ohm 0.08” 4˚ TL2 50 Ohm 0.05” 2.5˚ TL3 50 Ohm 0.02” 1.02˚ TL4 50 Ohm 0.02” 1.02˚ TL5 50 Ohm 0.02” 1.02˚ 100 pF 1000 pF 3.9 pF 1.2 pF 27 pF 2.2 μF 1.9 nH 1.0 nH 56 nH 50 Ohms TL6 50 Ohm 0.02” 1.02˚ PCB Material: 10 mil Rogers 4350 Er = 3.48 11 - 120 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 121 List of Materials for Evaluation PCB 108349 [1] Item J1 - J2 J3 C1, C7, C8 C2 C3 C4 C5 C6 C9, C10 L1 L2 L3 R1, R2 U1 PCB [2] Description PCB Mount SMA Connector 2 mm DC Header 100 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0603 Pkg. 1000 pF Capacitor, 0603 Pkg. 3.9 pF Capacitor, 0402 Pkg. 1.2 pF Capacitor, 0402 Pkg. 27 pF Capacitor, 0402 Pkg. 2.2 uF Capacitor, Tantalum 1.9 nH Inductor 0402 Pkg. 1.0 nH Inductor, 0402 Pkg. 56nH Inductor, 0805 Pkg. 50 Ohms Resistor, 0402 Pkg. HMC450QS16G / HMC450QS16GE Power Amp. 108191 Evaluation PCB, 10 mils The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com