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HMC455LP3_09

HMC455LP3_09

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC455LP3_09 - InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
HMC455LP3_09 数据手册
HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications This amplifier is ideal for high linearity applications: • Multi-Carrier Systems • GSM, GPRS & EDGE • CDMA & WCDMA Features Output IP3: +42 dBm Gain: 13 dB 56% PAE @ +28 dBm Pout +19 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package 11 LINEAR & POWER AMPLIFIERS - SMT • PHS Functional Diagram General Description The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifiers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance. Electrical Specifi cations, TA = +25° C, Vs= +5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) 37 24 11.5 Min. Typ. 1.7 - 1.9 13.5 0.012 13 10 27 28.5 40 7 150 39 24.5 0.02 10.5 Max. Min. Typ. 1.9 - 2.2 13 0.012 15 18 27.5 28 42 6 150 37 23 0.02 9 Max. Min. Typ. 2.2 - 2.5 11.5 0.012 10 15 26 27 40 6 150 0.02 Max. Units GHz dB dB / °C dB dB dBm dBm dBm dB mA 11 - 234 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Broadband Gain & Return Loss 15 10 Gain vs. Temperature 20 17 5 RESPONSE (dB) 0 -5 -10 -15 8 -20 -25 1 1.5 2 FREQUENCY (GHz) 2.5 3 5 1.5 S21 S11 S22 GAIN (dB) 14 11 +25C +85C -40C 11 2.2 2.3 2.4 2.5 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 1.5 +25C +85C -40C -5 RETURN LOSS (dB) -10 -15 -20 -25 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 30 29 28 27 P1dB (dBm) Psat vs. Temperature 30 28 Psat (dBm) 26 25 24 23 22 21 20 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 +25C +85C -40C 26 +25C +85C -40C 24 22 20 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 235 LINEAR & POWER AMPLIFIERS - SMT HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Output IP3 vs. Temperature 44 42 40 IP3 (dBm) 38 36 34 32 +25C +85C -40C Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 +25C +85C -40C 11 LINEAR & POWER AMPLIFIERS - SMT 30 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 0 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Power Compression @ 1.95 GHz 60 Pout (dBm), GAIN (dB), PAE (%) 50 40 30 20 10 0 -10 Pout Gain PAE Power Compression @ 2.15 GHz 60 Pout (dBm), GAIN (dB), PAE (%) 50 40 30 20 10 0 -10 Pout Gain PAE -5 0 5 10 15 20 -5 0 5 10 15 20 INPUT POWER (dBm) INPUT POWER (dBm) Reverse Isolation vs. Temperature 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 1.5 Gain, Power & IP3 vs. Supply Voltage @ 1.95 GHz Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 44 40 36 32 28 24 20 16 12 8 4.5 Gain P1dB Psat IP3 +25C +85C -40C 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 4.7 5 Vs (V) 5.2 5.5 FREQUENCY (GHz) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 236 HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz ACPR vs. Supply Voltage @ 1.96 GHz CDMA 2000, 9 Channels Forward -40 ACPR vs. Supply Voltage @ 2.14 GHz W-CDMA, 64 DPCH -30 -35 -45 ACPR (dBc) -50 4.5V 5V 5.5V ACPR (dBc) CDMA2000 Rev. 8 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels -40 -45 -50 -55 WCDMA Frequency : 2.14 GHz Integration BW: 3.84 MHz 64 DPCH 4.5V 5V 5.5V -55 11 21 -60 -60 -65 5 7 9 11 13 15 17 19 21 Channel Output Power (dBm) -65 5 7 9 11 13 15 17 19 Channel Output Power (dBm) Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFIN)(Vs = +5Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 16 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +6.0 Vdc +25 dBm 150 °C 1.04 W 63 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Application Circuit Recommended Component Values TL1 Impedance Physical Length Electrical Length 50 Ohm 0.33” 34° TL2 50 Ohm 0.18” 19° TL3 50 Ohm 0.13” 13.5° TL4 50 Ohm 0.04” 4° L1 C1 C2, C3 C4 C5 8.2 nH 2.2 µF 3.0 pF 0.9 pF 100 pF PCB Material: 10 mil Rogers 4350, Er = 3.48 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 237 LINEAR & POWER AMPLIFIERS - SMT Source ACPR Source ACPR HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Outline Drawing 11 LINEAR & POWER AMPLIFIERS - SMT NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC455LP3 HMC455LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 455 XXXX 455 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX Pin Descriptions Pin Number 1, 2, 4 - 9, 11 - 16 Function N/C Description This pin may be connected to RF ground. This pin is AC coupled. An off chip series matching capacitor is required. Interface Schematic 3 RFIN 10 RFOUT RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. 11 - 238 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 239 J3 Pin Number 1, 2, 3 4, 5, 6 Description GND Vs List of Materials for Evaluation PCB 106058 [1] Item J1 - J2 J3 C1 C2, C3 C4 C5 L1 U1 PCB [2] Description PCB Mount SMA Connector 2 mm DC Header 2.2 μF Capacitor, Tantalum 3.0 pF Capacitor, 0402 Pkg. 0.9 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 8.2 nH Inductor, 0402 Pkg. HMC455LP3 / HMC455LP3E Power Amplifier 106492 Evaluation PCB, 10 mils The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evalution PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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