HMC460LC5_10

HMC460LC5 v03.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Features Noise Figure: 2.5 dB @ 10 GHz Gain: 14 dB @ 10 GHz P1dB Output Power: +16.5 dBm @ 10 GHz Supply Voltage: +8V @ 75 mA 50 Ohm Matched Input/Output 32 Lead Ceramic 5x5mm SMT Package: 25mm2 7 AMPLIFIERS - LOW NOISE - SMT Typical Applications The HMC460LC5 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military & Space • Test Instrumentation Functional Diagram General Description The HMC460LC5 is a GaAs MMIC pHEMT Low Noise Distributed Amplifier in a leadless 5x5 mm ceramic surface mount package which operates from DC to 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and +16.5 dBm of output power at 1 dB gain compression while requiring only 75 mA from a Vdd = 8V supply. Gain flatness is excellent from DC to 20 GHz making the HMC460LC5 ideal for EW, ECM, Radar and test equipment applications. The wideband amplifier I/Os are internally matched to 50 Ohms. Electrical Specifications, TA = +25° C, Vdd= 8V, Idd= 75 mA* Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 8V, Vgg= -0.9V Typ.) 14 11 Min. Typ. DC - 6.0 14 ± 0.5 0.008 3.5 17 17 17 18 29.5 75 13 5.0 11 Max. Min. Typ. 6.0 - 18.0 14 ± 0.15 0.01 2.5 18 15 16 18 29 75 12 4.0 10 Max. Min. Typ. 18.0 - 20.0 13 ± 0.25 0.01 3.5 12 15 15 17 28.5 75 5 Max. Units GHz dB dB dB/ °C dB dB dB dBm dBm dBm mA * Adjust Vgg between -2 to 0V to achieve Idd= 75 mA typical. 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC460LC5 v03.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Gain vs. Temperature 20 Broadband Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 -35 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) 20 22 24 26 S11 S21 S22 7 AMPLIFIERS - LOW NOISE - SMT 7-2 16 GAIN (dB) 12 +25 C +85 C -40 C 8 4 0 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 +25 C +85 C -40 C +25 C +85 C -40 C Low Frequency Gain & Return Loss 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 10 -5 Noise Figure vs. Temperature 10 +25 C +85 C -40 C 8 S11 S21 S22 NOISE FIGURE (dB) RESPONSE (dB) 6 4 2 0 0.0001 0.001 0.01 0.1 FREQUENCY (GHz) 1 10 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC460LC5 v03.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Psat vs. Temperature 25 7 AMPLIFIERS - LOW NOISE - SMT P1dB vs. Temperature 25 +25 C +85 C -40 C 22 P1dB (dBm) 22 PSAT (dBm) 19 19 16 16 +25 C + 85 C -40 C 13 13 10 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 10 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 Output IP3 vs. Temperature 32 30 28 IP3 (dBm) 26 24 22 20 18 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 +25 C +85 C -40 C Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg 18 5 GAIN (dB), P1dB (dBm) 16 4 NOISE FIGURE (dB) 14 3 12 2 10 NOISE FIGURE GAIN P1dB 1 8 7.5 7.75 8 Vdd (V) 8.25 0 8.5 Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 -70 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 +25 C +85 C -40 C 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC460LC5 v03.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Typical Supply Current vs. Vdd Vdd (V) +7.5 +8.0 +8.5 Idd (mA) 74 75 76 Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) Gate Bias Voltage (Igg) RF Input Power (RFIN)(Vdd = +8 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 23 mW/°C above 85 °C) Thermal Resistance (channel to package bottom) Storage Temperature Operating Temperature +9 Vdc -2 to 0 Vdc 2.5 mA +18 dBm 175 °C 2W 44.4 °C/W -65 to +150 °C -55 to +85 °C 7 AMPLIFIERS - LOW NOISE - SMT 7-4 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 3 0-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Pin Descriptions Pin Number 1 - 4, 7 - 12, 14, 16 - 20, 23 - 29, 31 Function Description No connection. These pins may be connected to RF ground. Performance will not be affected. Interface Schematic N/C 5 RFIN This pin is DC coupled and matched to 50 Ohms. 6, 21 GND Package bottom must be connected to RF/DC ground. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC460LC5 v03.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz 7 AMPLIFIERS - LOW NOISE - SMT Pin Descriptions Pin Number Function Description Interface Schematic 13 ACG2 Low frequency termination. Attach bypass capacitor per application circuit herein. 15 Vgg Gate control for amplifier. Please follow”MMIC Amplifier Biasing Procedure” application note 22 RFOUT This pin is DC coupled and matched to 50 Ohms. 30 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 32 Vdd Power supply voltage for the amplifier. External bypass capacitors are required Application Circuit 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC460LC5 v03.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Evaluation PCB 7 AMPLIFIERS - LOW NOISE - SMT List of Materials for Evaluation PCB 117810 Item J1 - J2 J3 - J4 C4 C2, C3 C1 C5 C6 C7 U1 PCB [2] Description PCB Mount SMA Connector 2 mm Molex Header 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0402 Pkg. 4.7 µF Capacitor, Tantalum 0.1 uF Capacitor, 0603 Pkg. 0.01 uF Capacitor, 0603 Pkg. 2.2 uF Capacitor, 0603 Pkg. HMC460LC5 117808 Evaluation PCB [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6