HMC460_06

HMC460 v02.0704 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz 1 AMPLIFIERS - CHIP Typical Applications The HMC460 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military & Space • Test Instrumentation Features Noise Figure: 2.5 dB @ 10 GHz Gain: 14 dB @ 10 GHz P1dB Output Power: +16 dBm @ 10 GHz Supply Voltage: +8.0V @ 60 mA 50 Ohm Matched Input/Output 3.12 mm x 1.63 mm x 0.1 mm Functional Diagram General Description The HMC460 is a GaAs MMIC PHEMT Low Noise Distributed Amplifier die which operates between DC and 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and +16 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +8V supply. The HMC460 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= 8V, Idd= 60 mA* Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 8V, Vgg1= -0.9V Typ.) 14 12 Min. Typ. DC - 6.0 14 ± 0.5 0.008 4.0 17 17 17 18 27.5 60 13 0.016 5.0 12 Max. Min. Typ. 6.0 - 18.0 14 ± 0.15 0.01 2.5 22 15 16 18 28 60 12 0.02 3.5 11 Max. Min. Typ. 18.0 - 20.0 13 ± 0.25 0.01 3.0 15 15 15 17 27 60 0.02 4.0 Max. Units GHz dB dB dB/ °C dB dB dB dBm dBm dBm mA * Adjust Vgg between -2 to 0V to achieve Idd= 60 mA typical. 1 - 94 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC460 v02.0704 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz Broadband Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 -35 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) 20 22 24 26 S21 S11 S22 Gain vs. Temperature 20 18 16 14 GAIN (dB) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 +25 C +85 C -55 C 1 AMPLIFIERS - CHIP 1 - 95 Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) +25 C +85 C -55 C -10 -15 -20 -25 -30 0 2 4 6 8 10 +25 C +85 C -55 C 12 14 16 18 20 22 FREQUENCY (GHz) Low Frequency Gain & Return Loss 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 0.00001 Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 +25 C +85 C -55 C RESPONSE (dB) S21 S11 S22 0.0001 0.001 0.01 0.1 1 10 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC460 v02.0704 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz 1 AMPLIFIERS - CHIP P1dB vs. Temperature 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 0 2 4 6 Psat vs. Temperature 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 0 2 4 6 +25 C +85 C -55 C PSAT (dBm) P1dB (dBm) +25 C +85 C -55 C 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 Output IP3 vs. Temperature 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 0 2 4 6 Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1 18 17 GAIN (dB), P1dB (dBm) 16 15 14 13 12 11 10 9 8 NOISE FIGURE GAIN P1dB 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 7.75 8 Vdd (Vdc) 8.25 8.5 NOISE FIGURE (dB) OUTPUT IP3 (dBm) +25 C +85 C -55 C 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 7.5 Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 -70 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25 C +85 C -55 C 1 - 96 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC460 v02.0704 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz Typical Supply Current vs. Vdd Vdd (V) +7.5 +8.0 +8.5 Idd (mA) 59 60 62 Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) RF Input Power (RFin)(Vdd = +8.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 24 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +9.0 Vdc -2.0 to 0 Vdc +10 dBm 175 °C 2.17 W 41.5 °C/W -65 to +150 °C -55 to +85 °C 1 AMPLIFIERS - CHIP 1 - 97 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-1 Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC460 v02.0704 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz 1 AMPLIFIERS - CHIP Pad Descriptions Pad Number Function Description Interface Schematic 1 RFIN This pad is DC coupled and matched to 50 Ohms from DC - 20.0 GHz 2 Vdd Power supply voltage for the amplifier. External bypass capacitors are required 3 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 4 RFOUT This pad is DC coupled and matched to 50 Ohms from DC - 20.0 GHz 5 ACG2 Low frequency termination. Attach bypass capacitor per application circuit herein. 6 Vgg Gate control for amplifier. Adjust to achieve Idd= 60 mA. Die Bottom GND Die bottom must be connected to RF/DC ground. 1 - 98 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC460 v02.0704 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz Assembly Diagram 1 AMPLIFIERS - CHIP For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 99 HMC460 v02.0704 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz 1 AMPLIFIERS - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible