HMC461LP3

HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Typical Applications A high linearity 1 watt amplifier for: • Multi-Carrier Systems • GSM, GPRS & EDGE • CDMA & W-CDMA Features +45 dBm Output IP3 (Balanced Configuration) 12 dB Gain 48% PAE @ +30.5 dBm Pout +20 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package 11 LINEAR & POWER AMPLIFIERS - SMT • PHS • Balanced or Push-Pull Configurable Functional Diagram General Description The HMC461LP3 & HMC461LP3E are 1.7 - 2.2 GHz high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) dual-channel MMIC amplifiers. The linear performance of two HMC455LP3 high IP3 drivers is offered in this single IC which can be configured in a balanced or push-pull amplifier circuit. The amplifier provides 12 dB of gain and +30.5 dBm of saturated power at 48% PAE from a single +5 Vdc supply while utilizing external baluns in a balanced configuration. The high output IP3 of +45 dBm coupled with the low VSWR of 1.2:1 make the HMC461LP3 & HMC461LP3E ideal driver amplifiers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the dual MMIC amplifier IC. The LP3 provides an exposed base for excellent RF and thermal performance. Electrical Specifi cations*, TA = +25° C, Vs= +5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) 41 26 10 Min. Typ. 1.7 - 1.9 12.5 0.012 17 20 29 29.5 44 6.5 300 42 26.5 0.02 9 Max. Min. Typ. 1.9 - 2.2 12 0.012 18 25 29.5 30.5 45 6 300 0.02 Max. Units GHz dB dB / °C dB dB dBm dBm dBm dB mA * Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 11 - 250 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain & Return Loss 15 GAIN & RETURN LOSS (dB) Gain vs. Temperature 20 +25C +85C -40C 17 5 GAIN (dB) 14 -5 S21 S11 S22 11 -15 8 11 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) -25 1 1.5 2 FREQUENCY (GHz) 2.5 3 5 1.7 Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 1.5 +25C +85C -40C -5 RETURN LOSS (dB) +25C +85C -40C -10 -15 -20 -25 1.5 1.7 1.9 2.1 2.3 2.5 1.7 1.9 2.1 2.3 2.5 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 33 Psat vs. Temperature 33 31 P1dB (dBm) Psat (dBm) 31 29 29 +25C +85C -40C 27 +25C +85C -40C 27 25 25 23 1.7 1.8 1.9 2 2.1 2.2 2.3 23 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) FREQUENCY (GHz) Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 251 LINEAR & POWER AMPLIFIERS - SMT HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Output IP3 vs. Temperature 50 Noise Figure vs. Temperature 10 47 NOISE FIGURE (dB) 8 IP3 (dBm) 44 +25C +85C -40C 6 11 LINEAR & POWER AMPLIFIERS - SMT 41 4 +25C +85C -40C 38 2 35 1.7 1.8 1.9 2 2.1 2.2 2.3 0 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) FREQUENCY (GHz) Power Compression @ 1.95 GHz 54 Pout (dBm), GAIN (dB), PAE (%) 48 42 36 30 24 18 12 6 0 -10 Pout Gain PAE Power Compression @ 2.15 GHz 54 Pout (dBm), GAIN (dB), PAE (%) 48 42 36 30 24 18 12 6 0 -10 Pout Gain PAE -4 2 8 14 20 26 -4 2 8 14 20 26 INPUT POWER (dBm) INPUT POWER (dBm) Reverse Isolation vs. Temperature 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 1.5 +25C +85C -40C Gain & Power vs. Supply Voltage @ 2.15 GHz G ain (dB ), P 1dB (dB m), P s at (dBm) 32 30 28 26 24 22 20 18 16 14 12 10 8 4. 5 4.75 5 5. 25 5.5 G ain P 1dB P s at 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) S UP P LY VOL T AG E (Vdc) Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 11 - 252 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz ACPR vs. Supply Voltage @ 2.14 GHz W-CDMA, 64 DCPH -35 -40 ACPR vs. Supply Voltage @ 1.96 GHz CDMA2000, 9 Channels Forward -40 -45 ACPR (dBc) -50 ACPR (dBc) CDMA2000 Rev. 8 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels 4.5V 5V 5.5V -45 -50 -55 WCDMA Frequency : 2.14 GHz Integration BW: 3.84 MHz 64 DPCH -55 11 Source ACPR 4.5V 5V 5.5V -60 Source ACPR -60 -65 8 10 12 14 16 18 20 22 24 8 10 12 14 16 -65 Channel Output Power (dBm) 18 20 22 24 Channel Output Power (dBm) * Source ACPR: All data is RSS corrected for source ACPR. Dashed lines are shown where corrected data is below source ACPR. Output IP2 vs. Temperature 80 75 70 IP2 (dBm) 65 60 55 50 1.7 +25C +85C -40C Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2) RF Input Power (RFIN)(Vs = +5Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 32 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +6 Vdc +30 dBm 150 °C 2.08 W 31 °C/W -65 to +150 °C -40 to +85 °C 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 253 LINEAR & POWER AMPLIFIERS - SMT HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Outline Drawing 11 LINEAR & POWER AMPLIFIERS - SMT NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC461LP3 HMC461LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 461 XXXX 461 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 11 - 254 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Pin Descriptions Pin Number 2, 3, 5 - 8, 10, 11, 13 - 16 Function N/C Description This pin may be connected to RF ground. RF Input. This pin is AC coupled. An off chip series matching capacitor is required. Interface Schematic 1, 4 IN1, IN2 9, 12 OUT1, OUT2 RF output and DC Bias for the output stage. 11 LINEAR & POWER AMPLIFIERS - SMT TL2 50 Ohm 0.18” 19° GND Package bottom must be connected to RF/DC ground. Recommended Application Circuit for Balanced Amplifi er Confi guration Recommended Component Values L1, L2 C1, C2 C5, C6 C7, C8 C3, C4 C7, C8 C9, C10 R1, R2 8.2 nH 2.2 μF 5.0 pF 0.9 pF 100 pF 0.8 pF 4.0 pF 130 Ohm Impedance Physical Length Electrical Length TL1 50 Ohm 0.09” 9.5° PCB Material: 10 mil Rogers 4350, Er = 3.48 Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 255 HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT J3, J4 Pin Number 1, 2, 3 4, 5, 6 Description GND Vs List of Materials for Evaluation PCB 106485 [1] Item J1, J2 J3, J4 C1, C2 C3, C4 C5, C6 C7, C8 C9, C10 L1, L2 U1 U2, U3 PCB [2] Description PCB Mount SMA Connector 2 mm DC Header 2.2 μF Capacitor, Tantalum 100 pF Capacitor, 0402 Pkg. 5 pF Capacitor, 0402 Pkg. 0.8 pF Capacitor, 0402 Pkg. 4 pF Capacitor, 0402 Pkg. 8.2 nH Inductor, 0402 Pkg. HMC461LP3 / HMC461LP3E Power Amplifier Panasonic Balun, P/N EHFFD - 1619 106483 Evaluation PCB, 10 mils The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 11 - 256 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Notes: 11 LINEAR & POWER AMPLIFIERS - SMT F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 257