HMC462

HMC462 v04.1210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Features noise figure: 2 dB @ 10 Ghz Gain: 15 dB p1dB output power: +15 dBm @ 10 Ghz self-Biased: +5V @ 63 mA 50 ohm matched input/output Die size: 3.12 x 1.38 x 0.1 mm 1 Amplifiers - low noise - Chip Typical Applications The hmC462 wideband lnA is ideal for: • Telecom infrastructure • microwave radio & VsAT • military & space • Test instrumentation • fiber optics Functional Diagram General Description The hmC462 is a GaAs mmiC phemT low noise Distributed Amplifier die which operates between 2 and 20 Ghz. The amplifier provides 15 dB of gain, 2.0 to 2.5 dB noise figure and +15 dBm of output power at 1 dB gain compression while requiring only 63 mA from a single +5V supply. Gain flatness is excellent at ±0.5 dB from 6 - 18 Ghz making the hmC462 ideal for ew, eCm and rADAr applications. The hmC462 requires a single supply of +5V @ 63 mA and is the self-biased version of the hmC463. The wideband amplifier i/os are internally matched to 50 ohms facilitating easy integration into multi-Chip-modules (mCms). All data is with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= 5V parameter frequency range Gain Gain flatness Gain Variation over Temperature noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) (Vdd= 5V) 12.5 13.5 min. Typ. 2.0 - 6.0 15.5 ±0.5 0.015 3.0 15 12 15.5 18 26.5 63 84 11 0.025 4.0 13 max. min. Typ. 6.0 - 18.0 15 ±0.5 0.015 2.5 20 13 14 16 25.5 63 84 9.5 0.025 3.5 12 max. min. Typ. 18.0 - 20.0 14 ±0.5 0.015 3.0 14 8 12.5 15.5 24 63 84 0.025 3.7 max. Units Ghz dB dB dB/ °C dB dB dB dBm dBm dBm mA 1-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC462 v04.1210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Gain vs. Temperature 20 Gain & Return Loss 20 1 Amplifiers - low noise - Chip 1-2 10 RESPONSE (dB) S21 S11 S22 16 GAIN (dB) 0 12 +25C +85C -40C -10 8 -20 4 -30 0 4 8 12 16 20 24 FREQUENCY (GHz) 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -5 +25C +85C -40C -10 -15 -20 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Noise Figure vs. Temperature 10 NOISE FIGURE (dB) +25C +85C -40C 8 +25C +85C -40C 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC462 v04.1210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Psat vs. Temperature 25 +25C +85C -55C 1 Amplifiers - low noise - Chip P1dB vs. Temperature 20 17 P1dB (dBm) Psat (dBm) +25C +85C -40C 22 14 19 11 16 8 13 5 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Output IP3 vs. Temperature 30 Gain, Power, Noise Figure & Supply Current vs. Supply Voltage @ 10 GHz GAIN (dB), P1dB (dBm), NOISE FIGURE (dB) 20 74 70 27 16 IP3 (dBm) 24 +25C +85C -40C 12 66 Idd (mA) 21 8 Gain P1dB Noise Figure 62 18 4 Idd 58 15 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 0 4.5 5 5.5 6 6.5 7 7.5 8 Vdd SUPPLY VOLTAGE (Vdc) 54 Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfin)(Vdd = +5 Vdc) Channel Temperature Continuous pdiss (T = 85 °C) (derate 50 mw/°C above 85 °C) Thermal resistance (channel to die bottom) storage Temperature operating Temperature +9 Vdc +18 dBm 175 °C 4.5 w 41 °C/w -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +4.5 +5.0 +5.5 +7.0 +7.5 +8.0 idd (mA) 62 63 64 65 66 67 eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions 1-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC462 v04.1210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Outline Drawing 1 Amplifiers - low noise - Chip 1-4 Die Packaging Information [1] standard Gp-2 (Gel pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. noTes: 1. All Dimensions in inChes [millimeTers] 2. no ConneCTion reQUireD for UnlABeleD BonD pADs 3. Die ThiCKness is 0.004 (0.100) 4. TYpiCAl BonD pAD is 0.004 (0.100) sQUAre 5. BACKsiDe meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD 7. BonD pAD meTAliZATion: GolD Pad Descriptions pad number 1 function rfin Description This pad is AC coupled and matched to 50 ohms. interface schematic 2 Vdd power supply voltage for the amplifier. external bypass capacitors are required 3 rfoUT This pad is AC coupled and matched to 50 ohms. Die Bottom GnD Die bottom must be connected to rf/DC ground. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC462 v04.1210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz 1 Amplifiers - low noise - Chip Assembly Diagram 1-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC462 v04.1210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 1 Amplifiers - low noise - Chip 1-6 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. follow esD precautions to protect against esD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible