HMC463LH250
v04.1010
GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Typical Applications
The HMC463LH250 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military EW, ECM & C I • Test Instrumentation • Fiber Optics
3
Features
50 Ohm Matched Input/Output Hermetic SMT Package Gain: 14 dB Noise Figure: 2.5 dB @ Mid-Band P1dB Output Power: +18 dBm @ Mid-Band Supply Voltage: +5V @ 60mA Screening to MIL-PRF-38535 (Class B or S) Available
Functional Diagram
General Description
The HMC463LH250 is a GaAs MMIC pHEMT Low Noise AGC Distributed Amplifier packaged in a hermetic surface mount package which operates between 2 and 20 GHz. The amplifier provides 13 dB of gain, 3 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 8 dB typical. Gain flatness is excellent at ±0.5 dB from 2 - 14 GHz making the HMC463LH250 ideal for EW, ECM RADAR, test equipment and High-Reliability applications. The HMC463LH250 LNA I/Os are internally matched to 50 Ohms and are internally DC blocked.
Electrical Specifi cations, TA = +25° C, Vdd= 5V, Vgg2= Open, Idd= 60 mA*
Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 5V, Vgg1= -0.9V Typ.) 16 11.5 Min. Typ. 2.0 - 6.0 14.5 ±0.25 0.010 3.5 15 11 19 21.5 29 60 80 13 5.5 9 Max. Min. Typ. 6.0 - 16.0 12 ±0.5 0.010 2.5 15 15 18 20.5 27 60 80 10 4.5 8 Max. Min. Typ. 16.0 - 20.0 11 ±0.9 0.010 4 9 7 13 19 24 60 80 5.5 Max. Units GHz dB dB dB/ °C dB dB dB dBm dBm dBm mA
* Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical.
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F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC463LH250
v04.1010
GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
Gain & Return Loss
20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
S21 S11 S22
Gain vs. Temperature
20 18 16 14 GAIN (dB) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -40C
7
AMPLIFIERS - LOW NOISE - SMT
7-2
Input Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
+25C +85C -40C
RETURN LOSS (dB)
+25C +85C -40C
-5
-10
-15
-20
-25 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -40C
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -40C
F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC463LH250
v04.1010
GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
7
AMPLIFIERS - LOW NOISE - SMT
P1dB vs. Temperature
26
Psat vs. Temperature
26
22 P1dB (dBm) Psat (dBm)
22
18
18
+25C +85C -40C
14
+25C +85C -40C
14
10
10
6 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
6 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
Output IP3 vs. Temperature
32 30 28 26 IP3 (dBm) 24 22 20 18 16 14 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -40C
Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1
24 GAIN (dB), P1dB (dBm), Psat (dBm) 22 20 18 16 14 12 10 8 6 4.5 5 Vdd (V)
GAIN P1dB Psat
4.5 4 3.5 NOISE FIGURE (dB) 3 2.5 2 1.5 1
NF
0.5 0 5.5
Gain, P1dB & Output IP3 vs. Control Voltage @ 10 GHz
32 GAIN (dB), P1dB (dBm), IP3 (dBm) 28
Noise Figure & Supply Current vs. Control Voltage @ 10 GHz
80 70 6 5 NOISE FIGURE (dB) 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1
24 20 16 12 8 4 0 -4 -1.2 20 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 Vgg2 (V)
GAIN P1dB IP3
60 Idd (mA) 50 40 30
Vgg2 (V)
7-3
F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC463LH250
v04.1010
GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
Gain @ Several Control Voltages
18 14 10 GAIN (dB) 6 2 -2 -6 -10 -14 0 2 4
Vgg2=-1.3 V Vgg2=-1.2 V Vgg2=-1.1 V Vgg2=-1.0 V Vgg2=-0.9 V Vgg2=-0.8 V Vgg2=-0.6 V Vgg2=-0.4 V Vgg2=-0.2 V Vgg2=0 V
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Current (Igg1) Gate Bias Voltage (Vgg2)(AGC) RF Input Power (RFIN)(Vdd = +5 V) Channel Temperature Storage Temperature Operating Temperature +9 V -2 to 0 Vdc 2.5 mA (Vdd -9) Vdc to +2 Vdc +18 dBm 175 °C -65 to +150 °C -40 to +85 °C
7
AMPLIFIERS - LOW NOISE - SMT
7-4
6
8
10
12
14
16
18
20
22
Typical Supply Current vs. Vdd
Vdd (V) +4.5 Idd (mA) 58 60 62
FREQUENCY (GHz)
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
+5.0 +5.5
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: CERAMIC & KOVAR 2. LEAD AND GROUND PADDLE PLATING: GOLD 40-80 MICROINCHES. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PAD BURR LENGTH 0.15mm MAX. PAD BURR HEIGHT 0.25mm MAX. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC463LH250
v04.1010
GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Pin Descriptions
Pin Number 1, 2, 4, 5, 7, 8, 10 Function GND Description Ground paddle must be connected to RF/DC ground. Interface Schematic
3
RFIN
This pad is AC coupled and matched to 50 Ohms.
6
Vgg1
Gate control for amplifier. Adjust to achieve Idd= 60 mA.
9
RFOUT
This pad is AC coupled and matched to 50 Ohms.
11
Vdd
Power supply voltage for the amplifier. External bypass capacitors are required
12
Vgg2
Optional gate control if AGC is required. Leave Vgg2 open circuited if AGC is not required.
7-5
F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC463LH250
v04.1010
GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
Evaluation PCB
7
AMPLIFIERS - LOW NOISE - SMT
List of Materials for Evaluation PCB 111709 [1]
Item J1 - J2 J3 - J4 C1 - C3 C4 - C6 C7 - C9 U1 PCB [2] Description SRI K Connector 2 mm Molex Header 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 4.7 μF Capacitor, Tantalum HMC463LH250 111707 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350
The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
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