HMC463LP5_11

HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Features Gain: 13 dB Noise figure: 2.8 dB @ 10 GHz p1dB output power: +18 dBm @ 10 GHz supply Voltage: +5V @ 60 mA 50 ohm matched input/output 32 lead 5 x 5 mm smT package: 25 mm² 7 Amplifiers - low Noise - smT Typical Applications The HmC463lp5(e) is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military EW, ECM & C i 3 • Test Instrumentation • Fiber Optics Functional Diagram General Description The HmC463lp5(e) is a GaAs mmiC pHemT low Noise AGC Distributed Amplifier packaged in a leadless 5x5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 13 dB of gain, 2.8 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 8 dB typical. Gain flatness is excellent at ±0.5 dB from 6 - 18 GHz making the HmC463lp5(e) ideal for ew, eCm rADAr and test equipment applications. The HmC463lp5(e) lNA i/os are internally matched to 50 ohms and are internally DC blocked. Electrical Specifications, TA = +25 °C, Vdd = 5V, Idd = 60 mA* parameter frequency range Gain Gain flatness Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) (Vdd = 5V, Vgg1 = -0.9V Typ.) 16 10 min. Typ. 2-6 13 ±0.5 0.010 3 15 13 19 21 30 60 80 11 0.015 4 9 max. min. Typ. 6 - 18 12 ±0.5 0.010 3 13 10 16 19 24 60 80 10 0.015 5 8 max. min. Typ. 18 - 20 11 ±0.5 0.010 5.5 12 10 12 19 22 60 80 0.015 6.5 max. Units GHz dB dB dB/ °C dB dB dB dBm dBm dBm mA * Adjust Vgg1 between -2 to -0V to achieve Idd = 60 mA typical. 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Gain vs. Temperature 20 Gain & Return Loss 20 15 10 7 Amplifiers - low Noise - smT 7-2 16 S21 S11 S22 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 GAIN (dB) 12 8 +25C +85C -40C 4 0 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -5 +25C +85C -40C -10 -15 -20 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 +25C +85C -40C -10 Noise Figure vs. Temperature 10 +25C +85C -40C 8 -20 NOISE FIGURE (dB) 16 18 20 22 ISOLATION (dB) 6 -30 4 -40 -50 2 -60 0 2 4 6 8 10 12 14 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Psat vs. Temperature 26 7 Amplifiers - low Noise - smT P1dB vs. Temperature 26 22 22 P1dB (dBm) 18 Psat (dBm) 18 14 +25C +85C -40C 14 +25C +85C -40C 10 10 6 0 2 4 6 8 10 12 14 16 18 20 22 6 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature 32 29 Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1 24 4.5 4 3.5 GAIN (dB), P1dB (dBm), Psat (dBm) 22 20 18 16 14 12 10 8 6 NOISE FIGURE Gain P1dB Psat NOISE FIGURE (dB) 26 3 2.5 2 1.5 1 0.5 0 4.5 5 5.5 IP3 (dBm) 23 20 +25C +85C -40C 17 14 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Vdd (V) Gain, P1dB & Output IP3 vs. Control Voltage @ 10 GHz 32 Noise Figure & Supply Current vs. Control Voltage @ 10 GHz 75 70 65 60 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 Idd NOISE FIGURE 0.5 0 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 GAIN (dB), P1dB (dBm), IP3 (dBm) 28 24 20 16 12 8 4 0 -4 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 Gain P1dB IP3 NOISE FIGURE (dB) 55 Idd (mA) Vgg2 (V) 50 45 40 35 30 25 20 -1.4 -1.2 Vgg2 (V) 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Current (igg1) +9V -2 to 0V 2.5 mA (Vdd -9) Vdc to +2V +18 dBm 150 °C 1.24 w 52.3 °C/w -65 to +150 °C -40 to +85 °C Gain @ Several Control Voltages (Vgg2) 18 13 7 Amplifiers - low Noise - smT 7-4 8 GAIN (dB) Gate Bias Voltage (Vgg2)(AGC) rf input power (rfiN)(Vdd = +5V) Channel Temperature Vgg2 = -1.3V Vgg2 = -1.2V Vgg2 = -1.1V Vgg2 = -1.0V Vgg2 = -0.9V Vgg2 = -0.8V Vgg2 = -0.6V Vgg2 = -0.4V Vgg2 = -0.2V Vgg2 = 0V 3 -2 Continuous pdiss (T= 85 °C) (derate 19.1 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) 22 -7 -12 0 2 4 6 8 10 12 14 16 18 20 storage Temperature operating Temperature FREQUENCY (GHz) eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Typical Supply Current vs. Vdd Vdd (V) +4.5 +5.0 +5.5 idd (mA) 58 60 62 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 7 Amplifiers - low Noise - smT Outline Drawing NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe. 4. pAD BUrr leNGTH sHAll Be 0.15 mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05 mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05 mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number HmC463lp5 HmC463lp5e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] H463 XXXX H463 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Pin Descriptions pin Number 1, 3, 4, 6-14, 16-20, 22-29, 31, 32 function N/C Description The pins are not connected internally; however, all data shown herein was measured with these pins connected to rf/DC ground externally. interface schematic 7 Amplifiers - low Noise - smT 7-6 2 Vgg2 optional gate control if AGC is required. leave Vgg2 open circuited if AGC is not required. Typical Vgg2 = -1.5V to 0V 5 rfiN This pad is AC coupled and matched to 50 ohms 15 Vgg1 Gate control for amplifier. Adjust to achieve idd = 60 mA. 21 rfoUT This pad is AC coupled and matched to 50 ohms 30 Vdd power supply voltage for the amplifier. external bypass capacitors are required Ground paddle GND Ground paddle must be connected to rf/DC ground. F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 7 Amplifiers - low Noise - smT 7-7 Application Circuit F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 108341 item J1 - J2 J3 - J4 C1 - C3 C4 - C6 C7 - C8 U1 pCB [2] Description sri K Connector 2 mm molex Header 100 pf Capacitor, 0402 pkg. 1000 pf Capacitor, 0603 pkg. 4.7 µf Capacitor, Tantalum HmC463lp5(e) Amplifier 109949 evaluation pCB [1] [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon 25fr The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8