HMC464LP5_09

HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Typical Applications The HMC464LP5 / HMC464LP5E is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military EW, ECM & C I 3 Features P1dB Output Power: +26 dBm Gain: 14 dB Output IP3: +30 dBm Supply Voltage: +8V @ 290 mA 50 Ohm Matched Input/Output 25 mm2 Leadless SMT Package 11 LINEAR & POWER AMPLIFIERS - SMT • Test Instrumentation • Fiber Optics Functional Diagram General Description The HMC464LP5 & HMC464LP5E are GaAs MMIC PHEMT Distributed Power Amplifiers in leadless 5 x 5 mm surface mount packages which operate between 2 and 20 GHz. The amplifier provides 14 dB of gain, +30 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good from 2 - 18 GHz making the HMC464LP5(E) ideal for EW, ECM and radar driver amplifiers as well as test equipment applications. The wideband amplifier I/O’s are internally matched to 50 Ohms. Electrical Specifi cations, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA [1] Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 8V, Vgg= -0.5V Typ.) 23.5 12 Min. Typ. 2.0 - 6.0 14 ±0.5 0.025 15 15 26.5 27.5 32 4.0 290 22 0.035 11.5 Max. Min. Typ. 6.0 - 16.0 13.5 ±0.5 0.03 10 9 25 26 26 4.0 290 18 0.04 8 Max. Min. Typ. 16.0 - 20.0 11 ±1.0 0.05 7 11 21 24.0 22 6.0 290 0.06 Max. Units GHz dB dB dB/ °C dB dB dBm dBm dBm dB mA [1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical. 11 - 258 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature 20 18 16 14 GAIN (dB) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 259 Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Output Return Loss vs. Temperature 0 +25C +85C -40C RETURN LOSS (dB) +25C +85C -40C -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 -70 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Noise Figure vs. Temperature 12 11 10 NOISE FIGURE (dB) 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz P1dB vs. Temperature 30 28 26 24 P1dB (dBm) 22 20 18 16 14 12 +25C +85C -40C Psat vs. Temperature 30 28 26 24 Psat (dBm) 22 20 18 16 14 12 10 +25C +85C -40C 11 LINEAR & POWER AMPLIFIERS - SMT 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Output IP3 vs. Temperature 36 34 32 30 IP3 (dBm) 28 26 24 22 20 18 16 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg1 Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 32 30 28 26 24 22 20 18 16 14 12 10 7.5 8 Vdd (V) 8.5 Gain P1dB Psat IP3 Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFIN)(Vdd = +8 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 51.5 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +9 Vdc -2 to 0 Vdc (Vdd -8.0) Vdc to Vdd +20 dBm 150 °C 3.35 W 19.4 °C/W -65 to +150 °C -40 to +85 °C Class 1A Typical Supply Current vs. Vdd Vdd (V) +7.5 +8.0 +8.5 Idd (mA) 292 290 288 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 - 260 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Outline Drawing 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 261 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC464LP5 HMC464LP5E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H464 XXXX H464 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Pin Descriptions Pin Number 5 15 Function RFIN Vgg1 Description This pin is AC coupled and matched to 50 Ohms. Gate Control for amplifier. Adjust between -2 to 0V to achieve Idd= 290 mA. RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Interface Schematic 11 LINEAR & POWER AMPLIFIERS - SMT 21 RFOUT & Vdd 30 Vgg2 Control voltage for amplifier. +3V should be applied to Vgg2 for nominal operation. Ground Paddle 1 - 4, 6 - 14, 16 - 20, 22 - 29, 31, 32 GND Ground paddle must be connected to RF/DC ground. N/C No connection. These pins may be connected to RF ground. Performance will not be affected. Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. 11 - 262 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 263 List of Materials for Evaluation PCB 108344 [1] Item J1, J2 J3, J4 C1, C2 C3, C4 C5, C6 U1 PCB [2] Description PCB Mount SMA Connector 2 mm Molex Header 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 4.7 μF Capacitor, Tantalum HMC464LP5 / HMC464LP5E 109762 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com