HMC464_09

HMC464 v04.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Typical Applications The HMC464 wideband driver is ideal for: • Telecom Infrastructure Features P1dB Output Power: +26 dBm Gain: 16 dB Output IP3: +30 dBm Supply Voltage: +8.0V @ 290 mA 50 Ohm Matched Input/Output Die Size: 3.12 x 1.63 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Microwave Radio & VSAT • Military & Space • Test Instrumentation • Fiber Optics Functional Diagram General Description The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is excellent from 2 - 18 GHz making the HMC464 ideal for EW, ECM and radar driver amplifier applications. The HMC464 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA* Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 8V, Vgg1= -0.5V Typ.) 23.5 14 Min. Typ. 2.0 - 6.0 16 ±0.25 0.02 15 14 26.5 28 32 4.0 290 22 0.03 13 Max. Min. Typ. 6.0 - 18.0 16 ±0.5 0.02 17 12 26 27.5 30 4.0 290 19 0.03 11 Max. Min. Typ. 18.0 - 20.0 14 ±0.75 0.03 13 11 22 24.5 24 6.0 290 0.04 Max. Units GHz dB dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical. 3 - 36 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464 v04.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Gain & Return Loss 20 Gain vs. Temperature 20 10 RESPONSE (dB) GAIN (dB) S21 S11 S22 16 0 12 +25C +85C -55C 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 37 -10 8 -20 4 -30 0 4 8 12 16 20 24 FREQUENCY (GHz) 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Output Return Loss vs. Temperature 0 +25C +85C -55C RETURN LOSS (dB) +25C +85C -55C -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 -70 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C Noise Figure vs. Temperature 10 +25C +85C -55C 8 NOISE FIGURE (dB) 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464 v04.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Output P1dB vs. Temperature 30 28 26 P1dB (dBm) Output Psat vs. Temperature 30 26 Psat (dBm) 3 LINEAR & POWER AMPLIFIERS - CHIP 24 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C 22 +25C +85C -55C 18 14 Output IP3 vs. Temperature 36 Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 32 30 28 26 24 22 20 18 16 14 12 10 7.5 8 Vdd SUPPLY VOLTAGE (V) 8.5 Gain P1dB Psat IP3 32 IP3 (dBm) 28 +25C +85C -55C 24 20 16 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFIN)(Vdd = +8 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 51.5 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +9 Vdc -2 to 0 Vdc (Vdd -8) Vdc to Vdd +20 dBm 175 °C 4.64 W 19.4 °C/W -65 to +150 °C -55 to +85 °C Class 1A Typical Supply Current vs. Vdd Vdd (V) +7.5 +8.0 +8.5 Idd (mA) 292 290 288 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 38 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464 v04.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Outline Drawing 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 39 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 2 Vgg2 Gate Control 2 for amplifier. +3V should be applied to Vgg2 for nominal operation. 3 RFOUT & Vdd RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 4 Vgg1 Gate Control 1 for amplifier. Adjust between -2 to 0V to achieve Idd= 290 mA. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464 v04.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. 3 - 40 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464 v04.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible