HMC465_10

HMC465 v06.1209 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz Features gain: 17 db output voltage to 10 vp-p saturated output power: +24 dbm supply voltage: +8v @160mA 50 ohm matched input/output die size: 3.12 x 1.63 x 0.1 mm 2 Amplifiers - driver & gAin block - chip Typical Applications The hmc465 wideband driver is ideal for: • oc192 ln/mZ modulator driver • Telecom infrastructure • Test instrumentation • military & space Functional Diagram General Description The hmc465 is a gaAs mmic phemT distributed driver Amplifier die which operates between dc and 20 ghz. The amplifier provides 17 db of gain, 2.5 db noise figure and +24 dbm of saturated output power while requiring only 160 mA from a +8v supply. gain flatness is excellent at ±0.25 db as well as ±1 deg deviation from linear phase from dc - 10 ghz making the hmc465 ideal for oc192 fiber optic ln/mZ modulator driver amplifier as well as test equipment applications. The hmc465 amplifier i/os are internally matched to 50 ohms for easy integration into multichip-modules (mcms). All data is measured with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25 °C, Vdd = 8V, Vgg2 = 1.5V, Idd = 160mA* parameter frequency range gain gain flatness gain variation over Temperature noise figure input return loss output return loss output power for 1 db compression (p1db) saturated output power (psat) output Third order intercept (ip3) saturated output voltage group delay variation supply current (idd) (vdd = 8v, vgg1 = -0.6v Typ.) 19.5 15 min. Typ. dc - 6 18 ±0.5 0.015 3 18 18 22.5 24 33 10 ±3 160 19 0.025 5 15 max. min. Typ. 6 - 12 17 ±0.25 0.015 2.5 20 17 22 24 30 10 ±3 160 17 0.025 3.5 13 max. min. Typ. 12 - 20 16.5 ±0.5 0.02 3 16 17 20 22 26 8 ±3 160 0.03 4.5 max. Units ghz db db db/ °c db db db dbm dbm dbm vp-p ps mA * Adjust Vgg1 between -2 to 0V to achieve Idd = 160mA typical. 2-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC465 v06.1209 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz Gain vs. Temperature 20 Gain & Return Loss 20 10 16 S21 S11 S22 2 +25C +85C -55C RESPONSE (dB) 0 12 -10 8 -20 4 -30 0 4 8 12 16 20 24 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 +25C +85C -55C RETURN LOSS (dB) -10 +25C +85C -55C -15 -15 -20 -20 -25 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) Low Frequency Gain & Return Loss 30 20 Noise Figure vs. Temperature 8 7 NOISE FIGURE (dB) RESPONSE (dB) 10 0 -10 -20 -30 -40 0.00001 0.0001 0.001 0.01 6 5 4 3 2 1 0 S21 S11 S22 +25C +85C -55C 0.1 1 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 2-2 Amplifiers - driver & gAin block - chip GAIN (dB) HMC465 v06.1209 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz Psat vs. Temperature 30 2 Amplifiers - driver & gAin block - chip Output P1dB vs. Temperature 30 26 26 P1dB (dBm) 22 Psat (dBm) 22 18 +25C +85C -55C 18 +25C +85C -55C 14 14 10 0 2 4 6 8 10 12 14 16 18 20 22 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature 40 +25C +85C -55C Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Idd= 160mA Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 40 35 30 25 20 15 10 5 0 5.5 6 6.5 7 7.5 8 8.5 Gain P1dB Psat IP3 36 IP3 (dBm) 32 28 24 20 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Vdd SUPPLY VOLTAGE (V) Group Delay 0 Deviation from Linear Phase DEVIATION FROM LINEAR PHASE (deg) 5 -20 GROUP DELAY (ps) 3 -40 1 -60 -1 -80 -3 -100 0 1 2 3 4 5 6 7 8 9 10 -5 0 2 4 6 8 10 FREQUENCY (GHz) FREQUENCY (GHz) 2-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC465 v06.1209 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz Typical Supply Current vs. Vdd vdd (v) +7.5 +8.0 +8.5 idd (mA) 161 160 Absolute Maximum Ratings drain bias voltage (vdd) gate bias voltage (vgg1) gate bias current (igg1) gate bias voltage (vgg2) gate bias current (igg2) rf input power (rfin)(vdd = +8v) channel Temperature continuous pdiss (T = 85 °c) (derate 24 mW/°c above 85 °c) Thermal resistance (channel to die bottom) storage Temperature operating Temperature +9v -2 to 0v +3.2mA (vdd -8) v to +3 vdc +3.2mA +23 dbm 175 °c 2.17 W 41.5 °c/W -65 to +150 °c -55 to +85 °c 2 Amplifiers - driver & gAin block - chip 2-4 159 elecTrosTATic sensiTive device observe hAndling precAUTions Outline Drawing Die Packaging Information [1] standard gp-1 (gel pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. noTes: 1. All dimensions in inches [millimeTers] 2. no connecTion reQUired for UnlAbeled bond pAds 3. die Thickness is 0.004 (0.100) 4. TYpicAl bond pAd is 0.004 (0.100) sQUAre 5. bAckside meTAlliZATion: gold 6. bAckside meTAl is groUnd 7. bond pAd meTAliZATion: gold For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC465 v06.1209 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz 2 Amplifiers - driver & gAin block - chip Pad Descriptions pad number function description interface schematic 1 rfin This pad is dc coupled and matched to 50 ohms. 2 vgg2 gate control 2 for amplifier. +1.5v should be applied to vgg2 for nominal operation. 3 Acg1 low frequency termination. Attach bypass capacitor per application circuit herein. 4 Acg2 5 rfoUT & vdd rf output for amplifier. connect the dc bias (vdd) network to provide drain current (idd). see application circuit herein. 6 Acg3 low frequency termination. Attach bypass capacitor per application circuit herein. 7 Acg4 8 vgg1 gate control 1 for amplifier. die bottom gnd die bottom must be connected to rf/dc ground. 2-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC465 v06.1209 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz Assembly Diagram 2 Amplifiers - driver & gAin block - chip 2-6 Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC465 v06.1209 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz 2 Amplifiers - driver & gAin block - chip Device Operation These devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. The input to this device should be Ac-coupled. To provide the typical 8vp-p output voltage swing, a 1.2vp-p Accoupled input voltage swing is required. Device Power Up Instructions 1. ground the device 2. set vgg1 to -2v (no drain current) 3. set vgg2 to +1.5v (no drain current) 4. set vdd to +8v (no drain current) 5. Adjust vgg1 for idd = 160mA (vgg1 may be varied between -2v and 0v to set idd to 160mA) 6. Apply rf signal to input. Device Power Down Instructions 1. remove rf signal from input 2. remove vdd 3. remove vgg2 4. remove vgg1 2-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC465 v06.1209 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 2 Amplifiers - driver & gAin block - chip 2-8 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. follow esd precautions to protect against esd 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. c and a tool temperature of 265 deg. c. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. c. do noT expose the chip to a temperature greater than 320 deg. c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturer’s schedule. Wire Bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible