HMC473MS8

MICROWAVE CORPORATION v00.1103 HMC473MS8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Features Single Positive Voltage Control: 0 to +3V High Attenuation Range: 48 dB @ 0.9 GHz High P1dB Compression Point: +15 dBm Ultra Small Package: MSOP8 Replaces HMC173MS8 Typical Applications The HMC473MS8 is ideal for: 9 ATTENUATORS - SMT • Cellular, UMTS/3G Infrastructure • Portable Wireless • GPS General Description Functional Diagram The HMC473MS8 is an absorptive voltage variable attenuator in an 8-lead MSOP package. The device operates with a +3.3V supply voltage and a 0 to +3V control voltage. Unique features include a high dynamic attenuation range of up to 48 dB and excellent power handling performance through all attenuation states. The HMC473MS8 is ideal for operation in wireless applications from 0.45 to 1.6 GHz. Operation from 1.7 to 2.2 GHz is possible with a reduced maximum attenuation of 29 to 32 dB. The HMC473MS8 can be used with an external driver circuit for improved control voltage linearity vs. attenuation. Electrical Specifications, TA = +25° C, Vdd = +3.3 Vdc, 50 Ohm System Parameter Insertion Loss (Min. Atten.) (Vctl = 0.0 Vdc) 0.45 - 0.8 GHz 0.8 - 1.0 GHz 1.0 - 1.6 GHz 1.6 - 2.0 GHz 2.0 - 2.2 GHz 0.45 - 0.8 GHz 0.8 - 1.0 GHz 1.0 - 1.6 GHz 1.6 - 2.0 GHz 2.0 - 2.2 GHz 0.45 - 0.8 GHz 0.8 - 1.0 GHz 1.0 - 1.6 GHz 1.6 - 2.0 GHz 2.0 - 2.2 GHz Min Atten. Atten. >2.0 Min Atten. Atten. >2.0 Min Atten. Atten. >2.0 24 11 34 43 32 27 24 Min. Typ. 1.8 1.9 2.4 2.8 3.0 39 48 37 32 29 15 14 11 10 9 20 5.5 28 15 47 20 Max. 2.2 2.3 2.9 3.3 3.5 Units dB dB dB dB dB dB dB dB dB dB Attenuation Range (Vctl = 0 to +3 V) Return Loss (Vctl = 0 to +3 V) dB dB dB Input Power for 0.1 dB Compression (0.9 GHz) Input Power for 1.0 dB Compression (0.9 GHz) Input Third Order Intercept (0.9 GHz, Two-tone Input Power = +5.0 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) dBm dBm dBm dBm dBm dBm 0.45 - 2.2 GHz 1.3 1.5 µS µS 9 - 110 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1103 HMC473MS8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Insertion Loss vs. Temperature 0 +25 C +85 C -40 C Return Loss vs. Control Voltage 0 0V 1.0 V 1.8 V 2.0 V 3.0 V INSERTION LOSS (dB) -1 -5 RETURN LOSS (dB) 9 ATTENUATORS - SMT 9 - 111 -2 -10 -3 -15 -4 -20 -5 0.4 0.6 0.8 1 1.2 1.4 1.6 FREQUENCY (GHz) 1.8 2 2.2 -25 0.4 0.6 0.8 1 1.2 1.4 FREQUENCY (GHz) 1.6 1.8 2 Input IP3 vs. Control Voltage @ 0.45 GHz 55 50 45 INPUT IP3 (dBm) 40 35 30 25 20 15 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) +25 C +85 C -40 C Input IP3 vs. Control Voltage @ 0.9 GHz 55 50 45 INPUT IP3 (dBm) 40 35 30 25 20 15 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) +25 C +85 C -40 C Input IP3 vs. Control Voltage @ 1.9 GHz 55 50 45 INPUT IP3 (dBm) 40 35 30 25 20 15 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) +25 C +85 C -40 C Input IP3 vs. Control Voltage @ 2.1 GHz 55 50 45 INPUT IP3 (dBm) 40 35 30 25 20 15 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) +25 C +85 C -40 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.1103 MICROWAVE CORPORATION HMC473MS8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Relative Attenuation vs. Control Voltage @ 0.45 GHz 0 -5 Return Loss vs. Control Voltage @ 0.45 GHz 0 +25 C +85 C -40 C -15 -20 -25 -30 -35 -40 -45 0 0.5 1 1.5 2 RETURN LOSS (dB) ATTENUATION (dB) 9 ATTENUATORS - SMT -10 -5 +25 C +85 C -40 C -10 -15 -20 -25 2.5 3 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) CONTROL VOLTAGE (V) Relative Attenuation vs. Control Voltage @ 0.9 GHz 0 -5 -10 ATTENUATION (dB) -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) +25 C +85 C -40 C Return Loss vs. Control Voltage @ 0.9 GHz 0 +25 C +85C -40 C -5 RETURN LOSS (dB) -10 -15 -20 -25 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) Relative Attenuation vs. Control Voltage @ 1.9 GHz 0 -5 ATTENUATION (dB) -10 -15 -20 -25 -30 -35 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) +25 C +85 C - 40 C Return Loss vs. Control Voltage @ 1.9 GHz 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) -10 -15 -20 -25 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) 9 - 112 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.1103 MICROWAVE CORPORATION HMC473MS8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Relative Attenuation vs. Control Voltage @ 2.1 GHz 0 -5 ATTENUATION (dB) -10 -15 -20 -25 -30 -35 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) +25 C +85 C -40 C Return Loss vs. Control Voltage @ 2.1 GHz 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) 9 ATTENUATORS - SMT 9 - 113 -10 -15 -20 -25 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) Relative Attenuation vs. Control Voltage 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 0.4 0.6 0.8 1 1.2 1.4 1.6 FREQUENCY (GHz) 1.8 Worse Case Input P1dB vs. Temperature 25 ATTENUATION (dB) INPUT P1dB (dBm) 20 15 1.0 V 1.5 V 1.6V 1.7 V 1.8 V 2.0 V 3.0 V 10 +25 C +85 C -40 C 2 2.2 5 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 FREQUENCY (GHz) Absolute Maximum Ratings VCTL Vdd Maximum Input Power Vdd = +3.3 Vdc Channel Temperature (Tc) Thermal Resistance (RTH) (junction to lead) Storage Temperature Operating Temperature -0.2 Vdc to Vdd +8 Vdc +29 dBm +21 dBm 150 °C 92 °C/W -65 to +150 °C -40 to +85 °C Min. Atten. Attenuation >2 dB Control and Bias Voltage VCTL Vdd 0 to +3 Vdc @ 1 µA +3.3 Vdc +/- 0.1 Vdc @ 10 µA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1103 HMC473MS8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Outline Drawing 9 ATTENUATORS - SMT NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Pin Descriptions Pin Number Function Description Interface Schematic 1, 8 RF1, RF2 These pins are DC coupled and matched to 50 Ohms. DC blocking capacitors are required. 330pF capacitors are supplied on evaluation board. 2, 7 GND Pins must connect to RF ground. 3 Vctl Control voltage 4, 5 N/C No Connection. These pins may be connected to RF ground. Performance will not be affected. 6 Vdd Supply Voltage. 9 - 114 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1103 HMC473MS8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Attenuation Linearizing Control Circuit For The HMC473MS8 Voltage Variable Attenuator A driver circuit to improve the attenuation linearity of the HMC473MS8 can be implemented with a simple op-amp configuration. A breakpoint linearization circuit will scale the voltage supplied to the control line of the HMC473MS8, so that a more linear attenuation vs. control voltage slope can be achieved. A -3.3V and +3.3V supply is required. Diode and resistor values which define the op-amp gain, and breakpoint were selected to optimize a measured production lot of attenuators at 0.9 GHz. R7 may be varied to optimize the performance of any given attenuator. If the input voltage to the linearizing circuit will not drop below 1.0V, the R9 and D2 may be omitted, and this will greatly reduce the overall power consumption of the driver circuit. The linearizing circuit has been optimized for 0.9 GHz attenuation applications. A similar approach may be used at other frequencies by adjusting R1 - R9 resistor values. 9 ATTENUATORS - SMT 9 - 115 Required Parts List Part AD822 R1 R2 R3 R4 R5 R6 R7 R8 R9 D1, D2 Description Op-Amp 10K ohms 200K ohms 7.5K ohms 39K ohms 220K ohms 91K ohms 910 ohms 51 ohms 100 ohms LL4148 D-35 Manufacturer Analog Devices Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Digi-Key Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1103 HMC473MS8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Evaluation PCB 9 ATTENUATORS - SMT The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF ports should be 50 ohm impedance and the package ground leads should be connected directly to the PCB RF ground plane, similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. List of Material Item J1 - J2 J3 - J5 C1, C2 C3, C4 U1 PCB* Description PC Mount SMA RF Connector DC PIN 330pF capacitor, 0402 package 10KpF capacitor, 0603 package HMC473MS8 101825 Eval Board *Circuit Board Material: Rogers 4350 9 - 116 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1103 HMC473MS8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Notes: 9 ATTENUATORS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 9 - 117