HMC475ST89

HMC475ST89 / 475ST89E v01.0107 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz 5 AMPLIFIERS - SMT Typical Applications The HMC475ST89 / HMC475ST89E is an ideal RF/IF gain block & LO or PA driver: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment • IF and RF Applications Features P1dB Output Power: +22 dBm Gain: 21.5 dB Output IP3: +35 dBm Cascadable 50 Ohm I/Os Single Supply: +8V to +12V Industry Standard SOT89 Package Functional Diagram General Description The HMC475ST89(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 4.5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +25 dBm output power. The HMC475ST89(E) offers 21.5 dB of gain and +35 dBm output IP3 at 850 MHz while requiring only 110 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vs= 8.0 V, Rbias= 9.1 Ohm, TA = +25° C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 4.5 GHz DC - 4.5 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.5 GHz DC - 1.0 GHz 1.0 - 4.5 GHz DC - 4.5 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 4.5 GHz DC - 2.5 GHz 2.5 - 4.5 GHz DC - 3.0 GHz 3.0 - 4.5 GHz Min. 19.5 17.5 14.5 11.5 9 Typ. 21.5 19.5 16.5 13.5 12 0.008 11 14 14 13 10 25 22.0 21.0 19.5 16.0 14.0 35 30 3.5 3.8 110 Max. Units dB dB dB dB dB dB/ °C dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dB dB mA Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation 0.012 Output Power for 1 dB Compression (P1dB) 19.0 18.0 17.5 13.0 11.0 Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 135 5 - 432 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC475ST89 / 475ST89E v01.0107 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz Broadband Gain & Return Loss 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 0 1 2 Gain vs. Temperature 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 1 5 AMPLIFIERS - SMT 5 - 433 RESPONSE (dB) GAIN (dB) S21 S11 S22 +25C +85C -40C 3 4 5 6 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 -10 -15 -20 -25 -30 -35 0 1 2 3 4 5 FREQUENCY (GHz) Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) +25C +85C -40C INPUT RETURN LOSS (dB) +25C +85C -40C -5 -10 -15 -20 -25 0 1 2 3 4 5 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -5 REVERSE ISOLATION (dB) Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) -10 -15 -20 -25 -30 -35 -40 0 1 2 +25C +85C -40C 7 6 5 4 3 2 1 0 +25C +85C -40C 3 4 5 0 1 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC475ST89 / 475ST89E v01.0107 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz 5 AMPLIFIERS - SMT P1dB vs. Temperature 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 1 2 Psat vs. Temperature 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 1 2 P1dB (dBm) Psat (dBm) +25C +85C -40C +25C +85C -40C 3 4 5 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature 45 40 35 30 25 20 15 0 1 2 3 4 5 FREQUENCY (GHz) +25C +85C -40C Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 110 mA @ 850 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 42 39 36 33 30 27 24 21 18 15 12 9 6 3 0 8 9 10 Vs (Vdc) OIP3 (dBm) Gain P1dB Psat OIP3 11 12 Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 9.1 Ohms 140 135 130 125 120 115 110 105 100 95 90 85 80 75 6.9 +85C Icc (mA) +25C -40C 7 7.1 7.2 Vcc (Vdc) 7.3 7.4 7.5 5 - 434 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC475ST89 / 475ST89E v01.0107 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +7.2 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 16.86 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +8.0 Vdc +17 dBm 150 °C 1.09 W 59.3 °C/W -65 to +150 °C -40 to +85 °C 5 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC475ST89 HMC475ST89E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H475 XXXX H475 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 435 AMPLIFIERS - SMT HMC475ST89 / 475ST89E v01.0107 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz 5 AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description Interface Schematic 1 IN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 OUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit Recommended Bias Resistor Values for Icc= 110 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 8V 9.1 Ω ¼W 9V 18 Ω ½W 10V 27 Ω ½W 12V 43 Ω 1W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 μF 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 4500 6.8 nH 100 pF 5 - 436 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC475ST89 / 475ST89E v01.0107 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz Evaluation PCB 5 AMPLIFIERS - SMT List of Materials for Evaluation PCB 116092 Item J1 - J2 J3 - J4 C1, C2 C3 C4 C5 R1 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum Resistor, 1206 Pkg. Inductor, 0603 Pkg. HMC475ST89 / HMC475ST89E 107368 Evaluation PCB [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 437