HMC476MP86

v00.0603 MICROWAVE CORPORATION HMC476MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz Features P1dB Output Power: +12 dBm Gain: 20 dB Output IP3: +25 dBm Cascadable 50 Ohm I/Os Single Supply: +5V to +12V 8 AMPLIFIERS - SMT Typical Applications The HMC476MP86 is an ideal RF/IF gain block & LO or PA driver for: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment Functional Diagram General Description The HMC476MP86 is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 6 GHz. This Micro-P packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +13 dBm output power. The HMC476MP86 offers 20 dB of gain with a +25 dBm output IP3 at 850 MHz while requiring only 35 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vs= 5.0 V, Rbias= 56 Ohm, TA = +25° C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 6.0 GHz DC - 1.0 GHz 1.0 - 6.0 GHz DC - 4.5 GHz 4.5 - 6.0 GHz DC - 6.0 GHz 0.5 - 5.0 GHz 5.0 - 6.0 GHz DC - 5.0 GHz 5.0 - 6.0 GHz DC - 3.0 GHz 3.0 - 6.0 GHz 9.0 8.0 Min. 18.5 15.5 13.5 11.5 9.0 Typ. 20.0 17.0 15.0 13.0 10.5 0.008 20 15 20 13 18 12.0 11.0 25 23 2.5 3.5 35 0.012 Max. Units dB dB dB dB dB dB/ °C dB dB dB dB dB dBm dBm dBm dBm dB dB mA Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 8 - 242 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0603 MICROWAVE CORPORATION HMC476MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 S21 S11 S22 Gain vs. Temperature 24 22 20 18 14 12 10 8 6 4 2 0 +25 C +85 C -40 C 8 AMPLIFIERS - SMT 8 - 243 0 -5 -10 -15 -20 -25 -30 0 1 2 GAIN (dB) 5 16 3 4 5 6 7 8 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 1 2 3 4 5 6 FREQUENCY (GHz) +25 C +85 C -40 C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 1 2 3 4 5 6 FREQUENCY (GHz) +25 C +85 C -40 C Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 FREQUENCY (GHz) +25 C +85 C -40 C Noise Figure vs. Temperature 8 7 NOISE FIGURE (dB) 6 5 4 3 2 1 0 0 1 2 3 4 5 6 FREQUENCY (GHz) +25 C +85 C -40 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0603 MICROWAVE CORPORATION HMC476MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz 8 AMPLIFIERS - SMT P1dB vs. Temperature 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 Psat vs. Temperature 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 P1dB (dBm) +25 C +85 C -40 C Psat (dBm) +25 C +85 C -40 C 2 3 4 5 6 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature 30 28 26 24 OIP3 (dBm) 22 20 18 16 14 12 10 0 1 2 3 4 5 6 FREQUENCY (GHz) +25 C +85 C -40 C Gain, Power & OIP3 vs. Supply Voltage for Constant Id= 35 mA @ 850 MHz Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 5 6 7 Vs (Vdc) 8 9 Gain P1dB Psat OIP3 10 Vcc vs. Icc Over Temperature for Fixed Vs= 5V, RBIAS= 56 Ohms 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 2.7 +85 C Icc (mA) +25 C -40 C 2.8 2.9 3 3.1 3.2 3.3 3.4 Vcc (Vdc) 8 - 244 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0603 MICROWAVE CORPORATION HMC476MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) Collector Bias Current (Icc) RF Input Power (RFin)(Vcc = +3.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 7.75 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +6.0 Vdc 45 mA 8 AMPLIFIERS - SMT NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH THE “MICRO-X PACKAGE” +18 dBm 150 °C 0.504 W 129 °C/W -65 to +150 °C -40 to +85 °C Outline Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 245 v00.0603 MICROWAVE CORPORATION HMC476MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz 8 AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins must be connected to RF/DC ground. Application Circuit Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Bias Resistor Values for Icc= 35 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 5V 56 Ω 1/8 W 8V 130 Ω 1/4 W 10V 180 Ω 1/4 W 12V 240 Ω 1/2 W Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 µF 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5200 6.8 nH 100 pF 5800 3.3 nH 100 pF 8 - 246 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0603 HMC476MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Materials Item J1 - J2 J3 - J4 C1, C2 C3 C4 C5 R1 L1 U1 PCB* Description PC Mount SMA Connector DC Pin Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 µF Capacitor, Tantalum Resistor, 1210 Pkg. Inductor, 0603 Pkg. HMC476MP86 107087 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 247