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HMC479MP86_10

HMC479MP86_10

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC479MP86_10 - SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC479MP86_10 数据手册
HMC479MP86 / 479MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Typical Applications Features P1dB Output Power: +18 dBm Gain: 15 dB Output IP3: +34 dBm Cascadable 50 Ohm I/Os Single Supply: +5V to +12V Included in the HMC-DK001 Designer’s Kit 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT The HMC479MP86 / HMC479MP86E is an ideal RF/ IF gain block & LO or PA driver: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment Functional Diagram General Description The HMC479MP86 & HMC479MP86E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 5 GHz. This Micro-P packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +21 dBm output power. The HMC479MP86(E) offers 15 dB of gain with a +34 dBm output IP3 at 850 MHz while requiring only 72 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifi cations, Vs= 8.0 V, Rbias= 51 Ohm, TA = +25° C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 3.5 GHz 3.5 - 5.0 GHz DC - 5 GHz 0.5 - 1.0 GHz 1.0 - 2.5 GHz 2.5 - 4.0 GHz 4.0 - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.5 GHz 2.5 - 4.0 GHz 4.0 - 5.0 GHz DC - 2.0 GHz 2.0 - 5.0 GHz Min. 12.5 11.5 10.5 9 7.5 Typ. 14.5 13 12 11 9.5 0.008 12 16 18 15 18 25 15 18 18.5 17 14 12 34 32 28 25 4.0 4.8 72 Max. Units dB dB dB dB dB dB/ °C dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dB dB mA Gain Gain Variation Over Temperature 0.012 Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) 16 13 11 9 Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 100 8-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC479MP86 / 479MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Broadband Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Gain vs. Temperature 20 18 16 GAIN (dB) 8 +25 C +85 C -40 C S21 S11 S22 12 10 8 6 4 2 0 0 1 2 3 4 5 6 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 +25 C +85 C -40 C -5 RETURN LOSS (dB) RETURN LOSS (dB) -10 -15 -20 -25 -30 -10 +25 C +85 C -40 C -15 -20 -25 0 1 2 3 4 5 6 FREQUENCY (GHz) -35 0 1 2 3 4 5 6 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 Noise Figure vs. Temperature 10 9 REVERSE ISOLATION (dB) -5 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 +25 C +85 C -40 C +25 C +85 C -40 C -10 -15 -20 -25 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 8-2 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 14 HMC479MP86 / 479MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz P1dB vs. Temperature Psat vs. Temperature 22 20 18 16 Psat (dBm) 14 12 10 8 6 4 2 0 +25 C +85 C -40 C 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT P1dB (dBm) 22 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 FREQUENCY (GHz) +25 C +85 C -40 C 0 1 2 3 4 5 FREQUENCY (GHz) Output IP3 vs. Temperature 40 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 72 mA @ 850 MHz Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 36 30 24 18 12 6 0 5 6 7 8 Vs (V) 9 10 11 12 Gain P1dB Psat IP3 35 IP3 (dBm) 30 25 +25 C +85 C -40 C 20 15 0 1 2 3 4 5 FREQUENCY (GHz) Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 51 Ohms 80 +85 C 76 Icc (mA) +25 C 72 68 -40 C 64 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 Vcc (V) 8-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC479MP86 / 479MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) Collector Bias Current (Icc) RF Input Power (RFIN)(Vcc = +4.3 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 10.8 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +6 Vdc 100 mA +17 dBm 150 °C 0.702 W 92.6 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8-4 Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 5. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATIBLE WITH THE “MICRO-X PACKAGE” Package Information Part Number HMC479MP86 HMC479MP86E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking 479 479 [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC479MP86 / 479MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Pin Descriptions 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins must be connected to RF/DC ground. Application Circuit Recommended Bias Resistor Values for Icc= 72 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 5V 13 Ω 1/8 W 6V 27 Ω 1/4 W 8V 51 Ω 1/2 W 10V 82 Ω 1/2 W 12V 110 Ω 1W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 μF 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5000 6.8 nH 100 pF 8-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC479MP86 / 479MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Evaluation PCB 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8-6 List of Materials for Evaluation PCB 107489 [1] Item J1 - J2 J3 - J4 C1, C2 C3 C4 C5 R1 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum Resistor, 1210 Pkg. Inductor, 0603 Pkg. HMC479MP86 / HMC479MP86E 107087 Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC479MP86_10
### 物料型号 - 型号:HMC479MP86 / HMC479MP86E

### 器件简介 - 描述:这两款放大器是基于SiGe异质结双极晶体管(HBT)的增益块MMIC表面贴装放大器,覆盖直流至5GHz的频率范围。它们可以作为50欧姆的级联RF/IF增益阶段,以及输出功率高达+21dBm的LO或PA驱动器使用。

### 引脚分配 - Pin 1 (RFIN):射频输入,需要外部DC阻断电容。 - Pin 2, 4 (GND):接地引脚,必须连接到RF/DC地。 - Pin 3 (RFOUT):射频输出以及输出级的直流偏置(Vcc)。

### 参数特性 - 增益:15dB,850MHz时输出三阶互调点(IP3)为+34dBm。 - 供电电压:+5V至+12V单电源供电。 - 功耗:72mA(典型值)。 - 增益随温度变化:0.008至0.012dB/°C。 - 输入/输出回波损耗:根据不同频率范围,值在12dB至25dB之间。 - 输出功率1dB压缩点(P1dB):根据不同频率范围,值在9dBm至18.5dBm之间。 - 噪声系数:DC-2.0GHz时为4.0dB,2.0-5.0GHz时为4.8dB。

### 功能详解 - 应用:适用于蜂窝/PCS/3G、固定无线&WLAN、CATV、电缆调制解调器&DBS、微波无线电和测试设备。 - 特点:50欧姆级联输入/输出,单电源供电,包括在HMC-DK001设计师套件中。

### 应用信息 - 应用电路:提供了推荐偏置电阻值和关键应用频率下的推荐组件值,以及评估PCB的物料清单。

### 封装信息 - HMC479MP86:低应力注塑塑料封装,Sn/Pb焊料,MSL1等级。 - HMC479MP86E:符合RoHS的低应力注塑塑料封装,100%亚光Sn焊料,MSL1等级。
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