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HMC481MP86

HMC481MP86

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC481MP86 - SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC481MP86 数据手册
HMC481MP86 / 481MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Typical Applications Features P1dB Output Power: +20 dBm Gain: 20 dB Output IP3: +33 dBm Cascadable 50 Ohm I/Os Single Supply: +6V to +12V Included in the HMC-DK001 Designer’s Kit 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT The HMC481MP86 / HMC481MP86E is an ideal RF/ IF gain block & LO or PA driver for: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio& Test Equipment Functional Diagram General Description The HMC481MP86 & HMC481MP86E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 5 GHz. This Micro-P packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +21 dBm output power. The HMC481MP86(E) offers 20 dB of gain with a +33 dBm output IP3 at 850 MHz while requiring only 74 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifi cations, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5 GHz DC - 1.0 GHz 1.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 0.5 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz 16 15 14 12 9 Min. 18.5 15.5 12.5 10.5 9.0 Typ. 20.0 17.0 14.0 12.0 10.5 0.008 13 17 20 25 15 18 20 18 17 15 12 33 31 29 26 3.5 4.0 4.5 74 85 0.012 Max. Units dB dB dB dB dB dB/ °C dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dB dB dB mA Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 8-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC481MP86 / 481MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Broadband Gain & Return Loss 25 15 RESPONSE (dB) 5 -5 -15 -25 -35 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Gain vs. Temperature 24 20 16 12 8 4 0 0 1 2 3 4 5 6 FREQUENCY (GHz) +25 C +85 C -40 C 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8-2 Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 1 2 3 4 5 6 FREQUENCY (GHz) Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) +25 C +85 C -40 C +25 C +85 C -40 C GAIN (dB) S21 S11 S22 -10 -15 -20 -25 -30 -35 0 1 2 3 4 5 6 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 FREQUENCY (GHz) +25 C +85 C -40 C Noise Figure vs. Temperature 10 +25 C +85 C -40 C 8 NOISE FIGURE (dB) 6 4 2 0 0 1 2 3 4 5 6 FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC481MP86 / 481MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz P1dB vs. Temperature Psat vs. Temperature 24 20 16 12 8 4 0 +25 C +85 C -40 C 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT P1dB (dBm) 24 20 16 12 8 4 0 0 1 2 3 4 5 FREQUENCY (GHz) +25 C +85 C -40 C Psat (dBm) 0 1 2 3 4 5 FREQUENCY (GHz) Output IP3 vs. Temperature 36 Gain, Power & Output IP3 vs. Supply Voltage for Constant Id= 74 mA @ 850 MHz Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 36 30 24 18 12 6 0 6 7 8 9 Vs (V) 10 11 12 32 IP3 (dBm) 28 +25 C +85 C -40 C 24 20 Gain P1dB Psat IP3 16 0 1 2 3 4 5 FREQUENCY (GHz) Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 39 Ohms 84 82 80 78 76 74 72 70 68 66 64 62 60 58 4.8 +85 C Icc (mA) +25 C -40 C 4.9 5 5.1 5.2 Vcc (V) 5.3 5.4 5.5 5.6 8-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC481MP86 / 481MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) Collector Bias Current (Icc) RF Input Power (RFIN)(Vcc = +5.15 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 11.6 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +6 Vdc 100 mA +10 dBm 150 °C 0.753 W 86.3 °C/W -65 to +150 °C -40 to +85 °C Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8-4 Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 5. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATIBLE WITH THE “MICRO-X PACKAGE” Package Information Part Number HMC481MP86 HMC481MP86E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking 481 481 [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC481MP86 / 481MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Pin Descriptions 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins must be connected to RF/DC ground. Application Circuit Recommended Bias Resistor Values for Icc= 74 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 6V 11 Ω 1/8 W 8V 39 Ω 1/4 W 10V 62 Ω 1/2 W 12V 91 Ω 1W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 μF 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5000 6.8 nH 100 pF 8-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC481MP86 / 481MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz Evaluation PCB 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8-6 List of Materials for Evaluation PCB 107490 [1] Item J1 - J2 J3 - J4 C1, C2 C3 C4 C5 R1 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum Resistor, 1210 Pkg. Inductor, 0603 Pkg. HMC481MP86 / HMC481MP86E 107087 Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC481MP86
物料型号: - HMC481MP86:SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT放大器,覆盖DC至5GHz。 - HMC481MP86E:与HMC481MP86类似,但符合RoHS标准的版本。

器件简介: - HMC481MP86/HMC481MP86E是SiGe HBT Gain Block MMIC放大器,覆盖DC至5GHz频率范围。它们可以作为50欧姆的级联RF/IF增益阶段以及LO或PA驱动器,输出功率高达+21dBm。这些放大器提供20dB的增益,在850MHz时输出IP3为+33dBm,仅需74mA的单正供电。

引脚分配: - 1号引脚:RFIN,需要外部DC阻断电容。 - 2号和4号引脚:GND,必须连接到RF/DC地。 - 3号引脚:RFOUT,RF输出和输出级的DC偏置(Vcc)。

参数特性: - 增益(fachi Gain):在不同频率下有不同的增益值,从18.5dB到20.0dB。 - 输出功率1dB压缩(P1dB):在不同频率下有不同的功率值,从16dBm到20dBm。 - 输出三阶截取点(IP3):在不同频率下有不同的IP3值,从33dBm下降到26dBm。 - 噪声系数:在不同频率下有不同的值,从3.5dB到4.5dB。 - 供电电流(Icc):74mA到85mA。

功能详解: - HMC481MP86/HMC481MP86E采用达林顿反馈对,减少了对正常工艺变化的敏感性,同时在温度变化下保持出色的增益稳定性,并且只需要最少数量的外部偏置组件。

应用信息: - 适用于Cellular/PCS/3G、Fixed Wireless & WLAN、CATV、Cable Modem & DBS、Microwave Radio和Test Equipment等应用。

封装信息: - HMC481MP86:低应力注塑塑料封装,Sn/Pb焊料,MSL1等级。 - HMC481MP86E:符合RoHS标准的低应力注塑塑料封装,100%亚光Sn,MSL1等级。
HMC481MP86 价格&库存

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