HMC481ST89

MICROWAVE CORPORATION v00.0204 HMC481ST89 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Features P1dB Output Power: +19 dBm Gain: 20 dB Output IP3: +33 dBm Cascadable 50 Ohm I/Os Single Supply: +6V to +12V Industry Standard SOT89 Package 8 AMPLIFIERS - SMT Typical Applications The HMC481ST89 is an ideal RF/IF gain block & LO or PA driver for: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment Functional Diagram General Description The HMC481ST89 is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +21 dBm output power. The HMC481ST89 offers 20 dB of gain with a +33 dBm output IP3 at 1 GHz while requiring only 79 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz DC - 1.0 GHz 1.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 0.5 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 4.0 GHz 4.0 - 5.0 GHz 16 15 13 11 9 Min. 18 15.5 13 11 9 Typ. 20 17.5 15 13 11 0.008 12 15 17 27 23 18 19 18 16 14 12 33 30 27 25 3.5 4.0 79 0.016 Max. Units dB dB dB dB dB dB/ °C dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dB dB mA Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 8 - 286 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0204 HMC481ST89 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Broadband Gain & Return Loss 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 0 1 2 Gain vs. Temperature 24 22 20 18 GAIN (dB) +25C +85C -40C 8 AMPLIFIERS - SMT 8 - 287 RESPONSE (dB) S21 S11 S22 16 14 12 10 8 6 4 2 0 3 4 5 6 7 8 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 INPUT RETURN LOSS (dB) +25C +85C -40C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 -35 +25C +85C -40C -5 -10 -15 -20 -25 0 1 2 3 4 5 6 FREQUENCY (GHz) -40 0 1 2 3 4 5 6 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) +25C +85C -40C Noise Figure vs. Temperature 10 9 +25C +85C -40C -5 -10 -15 -20 -25 -30 0 1 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0204 MICROWAVE CORPORATION HMC481ST89 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz 8 AMPLIFIERS - SMT P1dB vs. Temperature 24 22 20 18 P1dB (dBm) 16 14 12 10 8 6 4 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 24 22 20 18 Psat (dBm) 16 14 12 10 8 6 4 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C Output IP3 vs. Temperature 36 34 32 OIP3 (dBm) 30 28 26 24 22 20 18 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 79 mA @ 850 MHz Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 6 7 8 9 Vs (Vdc) 10 Gain P1dB Psat OIP3 11 12 Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 39 Ohms 88 86 84 82 Icc (mA) 80 78 76 74 72 70 68 66 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 -40 C +25 C +85 C Vcc (Vdc) 8 - 288 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0204 MICROWAVE CORPORATION HMC481ST89 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +5 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 16.3 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +6.0 Vdc +17 dBm 8 AMPLIFIERS - SMT NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH THE “MICRO-X PACKAGE” 150 °C 1.06 W 61.4 °C/W -65 to +150 °C -40 to +85 °C Outline Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 289 v00.0204 MICROWAVE CORPORATION HMC481ST89 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz 8 AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Bias Resistor Values for Icc= 79 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 6V 11 Ω 1/8 W 8V 39 Ω 1/4 W 10V 62 Ω 1/2 W 12V 91 Ω 1W Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 µF 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5000 6.8 nH 100 pF 8 - 290 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0204 MICROWAVE CORPORATION HMC481ST89 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Materials for Evaluation PCB 108324* Item J1 - J2 J3 - J4 C1, C2 C3 C4 C5 R1 L1 U1 PCB** Description PC Mount SMA Connector DC Pin Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 µF Capacitor, Tantalum Resistor, 1210 Pkg. Inductor, 0603 Pkg. HMC481ST89 107368 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 291