HMC482ST89

HMC482ST89 / 482ST89E v02.0106 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Features P1dB Output Power: +22 dBm Gain: 20 dB Output IP3: +36 dBm Cascadable 50 Ohm I/Os Single Supply: +6V to +12V Industry Standard SOT89 Package Included in the HMC-DK001 Designer’s Kit 5 AMPLIFIERS - SMT Designer’s Kit Available Typical Applications The HMC482ST89 / HMC482ST89E is an ideal RF/IF gain block & LO or PA driver for: • Cellular / PCS / 3G • Fixed Wireless, WLAN & WiMAX • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment Functional Diagram General Description The HMC482ST89 & HMC482ST89E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +24 dBm output power. The Darlington feedback pair results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vs= 8.0 V, Rbias= 27 Ohm, TA = +25° C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz DC - 1.0 GHz 1.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz Min. 17 15 12.5 10 8 Typ. 19 17 14.5 12 10 0.008 15 18 20 14 12 8 16 22.5 20 17.5 15.5 13.5 36 35 32 30 28 4 5 5.5 110 Max. Units dB dB dB dB dB dB/ °C dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dB dB dB mA Gain Gain Variation Over Temperature Input Return Loss 0.016 Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) 19.5 17 14.5 12.5 10.5 Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 5 - 474 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC482ST89 / 482ST89E v02.0106 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 Gain vs. Temperature 24 22 20 18 16 GAIN (dB) 5 AMPLIFIERS - SMT 5 - 475 5 0 -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) S21 S11 S22 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C Input Return Loss vs. Temperature 0 INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 -35 -40 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -5 Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) -10 -15 -20 -25 -30 0 1 2 3 +25C +85C -40C 7 6 5 4 3 2 1 0 +25C +85C -40C 4 5 6 0 1 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC482ST89 / 482ST89E v02.0106 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz 5 AMPLIFIERS - SMT P1dB vs. Temperature 30 28 26 24 P1dB (dBm) 22 20 18 16 14 12 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 30 28 26 24 Psat (dBm) 22 20 18 16 14 12 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) +25C +85C -40C Output IP3 vs. Temperature 40 38 36 OIP3 (dBm) 34 32 30 28 26 24 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) +25C +85C -40C Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 110 mA @ 850 MHz Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 40 36 32 28 24 20 16 12 8 4 0 6 7 8 9 Vs (Vdc) 10 11 12 Gain(dB) P1dB(dBm) Psat(dBm) OIP3(dBm) Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 27 Ohms 128 126 124 122 Icc (mA) 120 118 116 114 112 110 108 4.6 4.7 4.8 4.9 Vcc (Vdc) 5 5.1 -40C +25C +85C 5.2 5 - 476 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC482ST89 / 482ST89E v02.0106 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +5 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 14.5 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +6.0 Vdc +14 dBm 150 °C 0.94 W 69 °C/W -65 to +150 °C -40 to +85 °C Class 1A 5 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC482ST89 HMC482ST89E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H482 XXXX H482 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 477 AMPLIFIERS - SMT HMC482ST89 / 482ST89E v02.0106 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz 5 AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit Recommended Bias Resistor Values for Icc= 110 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 6V 9.1 Ω 1/4 W 8V 27 Ω 1/2 W 10V 47 Ω 1W 12V 62 Ω 1.5 W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 μF 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5000 6.8 nH 100 pF 5 - 478 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC482ST89 / 482ST89E v02.0106 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Evaluation PCB 5 AMPLIFIERS - SMT List of Materials for Evaluation PCB 108324 [1] Item J1 - J2 J3 - J4 C1, C2 C3 C4 C5 R1 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum Resistor, 1210 Pkg. Inductor, 0603 Pkg. HMC482ST89 / HMC482ST89E 107368 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 479